• 전기학회논문지
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• 제57권8호
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• pp.1422-1428
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• 2008

In the current PDP technology, one of the most important issues in AC PDP is improvement of luminance and luminous efficacy. To improve luminance and luminous efficacy, new cell structure of PDP containing long discharge path is necessary. However, it causes an increment of firing voltage. In order to decrease firing voltage of AC PDP having long discharge gap, the protrusion electrode is proposed. To drop the firing voltage, the protrusion electrode is inserted into the forward area of the main discharge gap. This paper presents measurements of detailed optical and electrical characteristics of AC PDP with protrusion electrodes. The experimental results show that the proposed structure with gap 80um has lower firing voltage to 27V than that of the conventional long gap structure. Moreover, the ICCD(Intensified Charge Coupled Device) images of the proposed structure show quick discharge generation by 0.07usec and longer continuation by 0.05usec than that of the conventional long gap structure. Therefore, the proposed protrusion electrodes have higher luminance by 12.5% than that of the conventional structure, as having no decrement of Luminous efficacy.

• 한국광학회:학술대회논문집
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• 한국광학회 2005년도 하계학술발표회
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• pp.266-267
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• 2005

• Current Optics and Photonics
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• 제2권1호
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• pp.85-89
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• 2018

This paper presents a new, efficient hybrid photonic-plasmonic structure. The proposed structure efficiently and with very high accuracy combines the resonant mode of a low-mode-volume photonic-crystal nanocavity with a bowtie nanoantenna's plasmonic resonance. The resulting enormous enhancement of light intensity of about $1.1{\times}10^7$ in the gap region of the bowtie nanoantenna, due to the effective optical-resonance combination, is realized by subtle optimization of the nanocavity's optical characteristics. This coupled structure holds great promise for many applications relying on strong confinement and enhancement of optical field in nanoscale volumes, including antennas (communication and information), optical trapping and manipulation, sensors, data storage, nonlinear optics, and lasers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.46-46
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• 2009

The photoconductive $AgGaSe_2$(AGS) layers were grown by the hot wall epitaxy method. The AGS layer was confirmed to be the epitaxially grown layer along the <112> direction onto the GaAs(100) substrate. The band-gap variation as a function of temperature on AGS was well fitted by $E_8(T)=1.9501-8.37{\times}10^{-4}T^2/(T+224)$. The band-gap energy of AGS obtained at 293 K was determined to be 1.8111 eV.

• Journal of Magnetics
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• 제11권3호
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• pp.139-142
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• 2006

We fabricated new one-dimensional magnetophotonic crystal (1D-MPC) utilizing the second and third photonic band gaps where localized modes existed. Structure of the 1D-MPC was $(Ta_{2}O_{5}/SiO_{2})_{5}/Bi:YIG/(SiO_{2}/Ta_{2}O_{5})_{5}$ with optical thicknesses of 3$\lambda$ /4 for $Ta_{2}O_{5} and $SiO_2$ dielectric layers and $\lambda$ /2 for Bi:YIG defect layer, where $\lambda$ is a wavelength of a localized mode in the second photonic band gap. Faraday rotation at the localized mode in the second photonic band gap was enhanced, which was confirmed by calculation using 4${\times}$4 matrix method.

• 한국전기전자재료학회논문지
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• 제22권1호
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• pp.93-97
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• 2009

We analyzed voltage characteristics of toner particle type display according to particle layers and cell gap between two electrodes and ascertained the aging effects by measuring the response time of particles with and without aging process. The threshold/driving/breakdown voltage is proportional to layers of toner particles and cell gap and the response time at driving voltage is faster than that of threshold and breakdown voltage because of different q/m of color and black particles. The analysis of response time is a method of estimation of optical characteristics, driving voltage and particle lumping and these results are promoted by aging process. We use the laser and photodiode to measure response time and optical properties. It has not been studied and reported to analyze the relationship of response time, threshold/driving/breakdown voltage, lumping phenomena, cell gap, and aging process for toner particle type display.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.31-36
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• 2002

In this work $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}:Co^{2+}$ single crystals were grown by the chemical transport reaction method and the structure of $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}:Co$ single crystals were monoclinic structure. The temperature dependence of optical energy gap was fitted well to Varshni equation. Also, the entropy, enthalpy and heat capacity were deduced from the temperature dependence of optical energy gap.

• 한국재료학회지
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• 제15권3호
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• pp.195-201
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• 2005

The $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals were grown by the chemical transport reaction method. The indirect optical energy band gap was found to be 2.348, 2.345, and 2.343 eV for the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively. The direct optical energy band gap was found to be 2.511, 2.505, and 2.503 eV f3r the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively The temperature dependence of the optical energy band gap was well fitted by the Varshni equation. Two photoluminescence emission peaks with the peak energy of 2.214 and 1.792 eV for $SnS_2$, 2.214 and 1.837 eV for $SnS_2:Cd$, and 2.214 and 1.818 eV the $SnS_2:Sb$ were observed. The emission peaks were described as originating from the donor-acceptor pair recombinations.

• 한국정보통신학회논문지
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• 제16권10호
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• pp.2247-2252
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• 2012

본 논문은 동시진공증발법(co-evaporation method)으로 CIGS 박막(thin film)을 제작을 하였다. 제작과정 중 기판온도(substrate temperature)변화와 Ga/(In+Ga) 조성비(composition ratio) 변화에 따른 저항율(resistivity) 및 흡수스펙트럼(absorbance spectra)을 측정하였다. 기판온도가 상승하면 저항율이 감소하였으며, Ga/(In+Ga) 조성비가 0.30에서 0.72까지 증가됨에 따라 밴드갭(band gap)이 1.26eV, 1.30eV, 1.43eV,1.47eV로 증가됨을 알 수 가 있었다. 동일한 조건에서 조성비를 증가하므로써 두께가 증가되었으며 저항율은 감소하였다. 본 실험을 통하여 CIGS 박막을 제작하면 광흡수률(optical absorbance ratio) 및 광전류(optical current)가 증가 될 것으로 예측할 수가 있다.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2009년도 Korea Superconductivity Society Meeting 2009
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• pp.13-13
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• 2009