• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.193.1-193.1
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• 2014

This study was to investigate the electronic structure and optical properties of Na doped into NiO thin film using XPS and REELS. The films were grown by electron beam evaporation with varying the annealing temperature. The relationship between the electrical characteristics with the local structure of NiO thin films was also discussed. The x-ray photoelectron results showed that the Ni 2p spectra for all films consist of Ni 2p3/2 which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The reflection electron energy loss spectroscopy spectra showed that the band gaps of the NiO thin films were slightly decreased with Na-doped into films. The Na-doped NiO showed relatively low resistivity compared to the undoped NiO thin films. In addition, the Na-doped NiO thin films deposited at room temperature showed the best properties, such as a p-type semiconducting with low electrical resistivity of $11.57{\Omega}.cm$ and high optical transmittance of ~80% in the visible light region. These results indicate that the Na doping followed by annealing process plays a crucial in enhancing the electrical and optical properties of NiO thin films. We believe that our results can be a good guide for those growing NiO thin films with the purpose of device applications, which require deposited at room temperature.

• Journal of the Korean Ceramic Society
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• v.34 no.7
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• pp.693-698
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• 1997

The refractive index and dispersion in the (100-x)(0.6CaO.0.4Al2O3).xSiO2(x=0~30) glasses were investigated. As the amount of SiO2 increased, the refractive index decreased. The change of refractive index was attributed to the change of the molar refraction rather than the molar volume. When the amount of SiO2 was smaller than 20 mol%, the average electronic transition energy gaps(E0) and the electronic oscillator strengths(Ed) were about 10.9($\pm$0.1) nd 18($\pm$0.5)eV, respectively. However E0 and Ed of the glass (CAS30) with 30 mol% SiO2 increased to 12.63 and 19.89eV, respectively. The similar results was observed in the variation of Abbe Number. Abbe number of the glass in the range of 0~20 mol% SiO2 was about 46 and that of CAS30 increased to 60. The zero-material dispersion wavelength({{{{ lambda }}0) of pure calcium aluminate glass was 1.8 ${\mu}{\textrm}{m}$. As the amount of SiO2 increased, the zero-material dispersion wavelength shifted to a shorter wavelength. {{{{ lambda }}0 of CAS30 was 1.5 ${\mu}{\textrm}{m}$, that is currently using for the optical telecommunication system.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.9
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• pp.434-437
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• 2001

ZnSe, ZnSe:Ho/sup 3+/, Mg/sub x/Zn/sub 1-x/Se and Mg/sub x/Zn/sub 1-x/Se:Ho/sup 3+/ crystals were grown by the chemical transport reaction method. The crystal structures and optical energy band gaps of the single crystals were investigated. Their photoluminescence(PL) spectra were measured at 10 [K]. Sharp emission peaks in the blue-green wavelength range and broad emission peaks in the yellow-red wavelength range were observed. The single crystals doped with 1.0 [mol%] of holmium did not show the sharp emission peaks because of defects which were thought to be originated to the holmium dopant.

• Proceedings of the KIEE Conference
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• 2000.07e
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• pp.35-39
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• 2000

$ZnIn_2S_4$ and $ZnGaInS_4:Er^{3+}$ single crystals crystallized in the rhombohedral (hexagonal) space group $C_{3v}^5(R3m)$, with lattice constants $a=3.852{\AA},\;c=37.215{\AA}$ for $ZnIn_2S_4$, and $a=3.823{\AA}$, and $c=35.975{\AA}$ for $ZnIn_2S_4:Er^{3+}$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of there compounds had a direct and indirect band gap, the direct and indirect energy gaps are found to be 2.778 and 2.682 eV for $ZnIn_2S_4$, and 2.725 and 2.651eV for $ZnIn_2S_4:Er^{3+}$ at 293 K. The photoluminescence spectra of $ZnIn_2S_4:Er^{3+}$ measured in the wavelength ranges of $500nm{\sim}900nm$ at 10 K. Eight sharp emission peaks due to $Er^{3+}$ ion are observed in the regions of $549.5{\sim}550.0nm,\;661.3{\sim}676.5nm$, and $811.1{\sim}834.1nm$, and $1528.2{\sim}1556.0nm$ in $CdGaInS_4:Er^{3+}$ single crystal. These PL peaks were attributed to the radiative transitions between the split electron energy levels of the $Er^{3+}$ ions occupied at $C_{2v}$, symmetry of the $ZnIn_2S_4$ single crystals host lattice.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.337-337
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• 2013

ZnO seed layers were deposited on a quartz substrate using the sol-gel method, and B-doped ZnO (BZO) nanorods with different B concentrations ranging from 0 to 2.5 at.% were grown on the ZnO seed layers by the hydrothermal method. The structural, optical, electrical propertiesof the ZnO and BZO nanorods were investigated using field-emission scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), ultraviolet-visible spectroscopy, and hall effect. The ZnO and BZO nanorods grew well aligned on the surface of the quartz substrates. From the XRD data, it can be seen that the B doping is responsible for the distortion of the ZnO lattice. The PL spectra show near-band-edge emission and deep-level emission, and they also show that B doping significantly affects the PL properties of ZnO nanorods. The optical band gaps are changed by B doping, and thus the Urbach energy value changed with the optical band gap of the ZnO nanorods. From the hall measurements, it can be observed that the values of electrical resistivity, carrier concentration, and mobility are changed by B doping.

• Nuclear Engineering and Technology
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• v.52 no.11
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• pp.2585-2593
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• 2020

Swift heavy ion (SHI) beam irradiation can generate desirable defects in materials by transferring sufficient energy to the lattice that favours huge possibilities in tailoring of materials. The effect of Ag¹⁵⁺ ion irradiation with energy 200 MeV on spray deposited V₂O₅ thin films of thickness 253 nm is studied at various ion doses from 5 × 10¹¹ to 1 × 10¹³ ions/㎠. The XRD results of pristine film confirmed orthorhombic structure of V₂O₅ and its average crystallite size was found to be 20 nm. The peak at 394 cm^-1 in Raman spectra confirmed O-V-O bonding of V₂O₅, whereas 917 cm^-1 arise because of distortion in stoichiometry by a loss of oxygen atoms. Raman peaks vanished completely above the ion fluence of 5 × 10¹² ions/㎠. Optical studies by UV-Vis spectroscopy shows decrement in transmittance with an increase in ion fluence up to 5 × 10¹² ions/㎠. The red shift is observed both in the direct and indirect band gaps until 5 × 10¹² ions/㎠. The surface topography of the pristine film revealed sheath like structure with randomly distributed spherical nano-particles. The roughness of film decreased and the density of spherical nanoparticles increased upon irradiation. Irradiation improved the conductivity significantly for fluence 5 × 10¹¹ ions/㎠ due to band gap reduction and grain growth.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.441-442
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• 2012

SnNb2O6 nanoplates were prepared by a solvothermal synthesis with water and ethanol mixed solvent. For improvement of their properties, as-prepared SnNb2O6 nanoplates also were calcined. The prepared powder was characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), Transmission electron microscope (TEM), UV-vis spectroscopy, Raman spectrometer, Brunauer-Emmett-Teller (BET). The calcined nanoplates have a smaller surface area than the as-prepared nanoplates have. Nevertheless, in the case of the optical absorption properties, the calcined nanoplates could absorb more photon energy, due to their smaller band gaps. The Raman analysis revealed that the Nb-O bond length in the calcined nanoplates was longer than that in the as-prepared nanoplate. The higher optical absorption capability of the calcined nanoplates was attributed to the local structure variation within them. Furthermore the high crystallinity of the calcined nanoplates is effective in improving the generation of charge carriers. So, It was found that the calcined nanoplates exhibited superior photocatalytic activity for the evolution of H2 from an aqueous methanol solution than the as-prepared nanoplates under UV and visible irradiation. Therefore, the enhanced photocatalytic activity of the calcined nanoplate powder for H2 evolution was mainly attributed to its high crystallinity and improved optical absorption property resulting from the variation of the crystal structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.281-287
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• 2002

The stochiometric composition of AgGaS$_2$ polycrystal source materials for the AgGaS$_2$/GaAs epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal AgGaS$_2$ has tetragonal structure of which lattice constant a$\sub$0/ and c$\sub$0/ were 5.756 ${\AA}$ and 10.305 ${\AA}$, respectively. AgGaS$_2$/GaAs epilayer was deposited on throughly etched GaAs(100) substrate from mixed crystal AgGaS$_2$ by the Hot Wall Epitaxy (100) system. The source and substrate temperature were 590$^{\circ}C$ and 440$^{\circ}C$ respectively. The crystallinity of the grown AgGaS$_2$/GaAs epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for AgGaS$_2$/GaAs epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by ${\alpha}$ : 8.695${\times}$10$\^$-4/ eV/K, and ${\beta}$ = 332 K. From the photocurrent spectra by illumination of polarized light of the AgGaS$_2$/GaAs epilayer, we have found that crystal field splitting ΔCr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pain are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Journal of the Korean Solar Energy Society
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• v.33 no.2
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• pp.35-41
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• 2013

Dye-sensitized solar cell (DSC) allows light transmission and the application of various colors that make it especially suitable for building-integrated PV (BIPV) application. In order to apply DSC module into windows, it has to be panelized: DSC module should be protected with reinforced glass to the entire surface. Up to date, it seems to be common to make double glazing with DSC modules with air gaps between the glasses and the DSC modules. Few research has been conducted on the characteristics of various glazing types with DSC modules. This study aims to analyze the electrical performance of DSC modules according to panelizing method for glazing unit with DSC modules. The prototype of the DSC glazing that applied silicone filler between DSC modules and glasses was developed. The electrical performances of this type of DSC glazing with the filler and rather conventional double glazing with DSC modules were compared. Their performances were measured using a solar simulator that is suitable for DSC performance testing. The results indicated that the electrical performance of the filler type DSC glazing improved by 7% compared to that of the conventional DSC double glazing type.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.199-204
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• 2000

In this study, the ZnS nanosized thin films that could be used for fabrication of blue light-emitting diodes, electro-optic modulators, and n-window layers of solar cells were grown by the solution growth technique (SGT), and their structural and optical properties were examined. Based on these results, the quantum size effects of ZnS were systematically investigated. Governing factors related to the growth condition were the concentration of precursor solution, growth temperature, concentration of aq. ammonia, and growth duration. X-ray diffraction patterns showed that the ZnS thin film obtained in this study had the cubic structure ($\beta$-ZnS). When the growth temperature was $75^{\circ}C$, the surface morphology and the grain size uniformity were the best. The energy band gaps of samples were determined from the optical transmittance valued, and were shown to vary from 3.69 eV to 3.91 eV. These values were substantially higher than 3.65 eV of bulk ZnS, demonstrating that the quantum size effect of SGT grown ZnS is remarkable. Photoluminescence (PL) peaks were observed at the positions corresponding to the lower energy than that to energy band gap, illustrating that the surface states were induced by the ultra-fineness of grains in ZnS films. Particularly, for the first time, it is reported for the SGT grown ZnS that the PL peaks were shifted depending on the grain size.