• Title/Summary/Keyword: Optical concentration

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Line Share Device Design by CWDM (CWDM 기반 선로 공유 장치 설계)

  • Jung, Byung-Chan;Cho, Tae-Kyoung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.9 no.1
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    • pp.87-92
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    • 2008
  • This study presents the design methods that will enable high speed communication companies to establish high efficiency optical communication network at a low cost. This study compares and analyzes CWDM and DWDM technology that transmit multiple optical signals through an optic core, and describes compensation of deteriorated optical signal, which occurs in long distance data transmission, through the stabilization of TX/RX terminal to enable long distance data transmission. CWDM based line access multiplexer increases concentration efficiency by eight times by providing 4:1 concentration subscriber network.

Fabrication of Optical Fiber Preforms for Optical Communication by Centrifuge - Effects of Fine Particle Sizes and Traversing Injection Tube - (원심력을 이용한 광통신용 광섬유 모재제조 - 미세입자 크기 및 이동식 injection tube의 영향 -)

  • Min, Dong-Soo;Kim, Kyo-Seon;Lee, Kwang-Rae
    • Journal of Industrial Technology
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    • v.12
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    • pp.51-59
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    • 1992
  • In this paper, the technique to fabricate the optical fiber preforms by centrifuge was investigated, using silica particles of different sizes. The injection tube was designed to traverse axially so that uniform coaling of tiny silica particles onto the substrate tube can be certified. The deposition efficiencies and deposition rates of $SiO_2$ particles were measured to elucidate the effects of process variables such as rotation speed of rotor, aqueous flow rate, suspension concentration, binder concentration and overflow weir diameter. This study shows dearly the merit of this technique by enhancing abruptly the deposition rates and deposition efficiencies, comparing to the conventional processes for optical fiber preforms.

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Electrical and Optical Properties of Zinc Oxide Thin Films Deposited Using Atomic Layer Deposition

  • Kim, Jeong-Eun;Bae, Seung-Muk;Yang, Hee-Sun;Hwang, Jin-Ha
    • Journal of the Korean Ceramic Society
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    • v.47 no.4
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    • pp.353-356
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    • 2010
  • Zinc oxide (ZnO) thin films were deposited using atomic layer deposition. The electrical and optical properties were characterized using Hall measurements, spectroscopic ellipsometry and UV-visible spectrophotometry. The electronic concentration and the mobility were found to be critically dependent on the deposition temperature, exhibiting increased resistivity and reduced electronic mobility at low temperature. The corresponding optical properties were measured as a function of photon energy ranging from 1.5 to 5.0 eV. The simulated extinction coefficients allowed the determination of optical band gaps, i.e., ranging from 3.36 to 3.41 eV. The electronic carrier concentration appears to be related to the reduction in the corresponding band gap in ZnO thin films.

Improved optical design and performances of Amon-Ra instrument energy channel

  • Seong, Se-Hyun;Hong, Jin-Suk;Ryu, Dong-Ok;Park, Won-Hyun;Lee, Han-Shin;Kim, Sug-Whan
    • Bulletin of the Korean Space Science Society
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    • 2010.04a
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    • pp.26.1-26.1
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    • 2010
  • In this report, we present newly improved optical design for the Amon-Ra energy channel and its optical performance. The design is optimized parametrically with emphasis on improved light concentration. And then its performances are computed, first, from a laboratory test simulation using laser method (wave optics approach) and, second, from an in-orbit radiative transfer simulation using IRT method with 3D Earth model (geometrical optics approach). Two simulation test results show clear evidence of energy concentration improvement.

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Electro-optical Properties of Twisted Nematic Liquid Crystal Displays Fabricated with TIPS-pentacene Doping

  • Lee, Jin-Woo
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.2
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    • pp.82-85
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    • 2013
  • This paper introduces 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) doped liquid crystal (LC) alignment properties on a rubbed polyimide (PI) layer as a function of the doping concentration of TIPS pentacene. Pretilt angles, photomicrographs, and electro-optical properties of TIPS pentacene doped LCs were comparable to those of pure LCs. However, TIPS pentacene in a LC medium supported twisted nematic-liquid crystal displays (TN-LCDs) to improve electro-optical properties. The threshold voltages observed in the TN cells decreased as the TIPS pentacene concentration increased. In addition, suitable response times were observed in TN cells.

Fabrication of Nonlinear Optical Fiber Doped with PbTe Quantum Dots Using Atomization Doping Process and its Optical Property (Atomization 방법을 이용한 PbTe quantum dots이 함유된 비선형 광섬유의 제조 및 광특성)

  • Ju, Seong-Min;Lee, Su-Nam;Kim, Taek-Jung;Han, Won-Taek
    • Proceedings of the Optical Society of Korea Conference
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    • 2004.02a
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    • pp.360-361
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    • 2004
  • An atomization doping process is proposed to manufacture nonlinear optical fiber containing higher concentration of PbTe nano-particles in the core of the fiber than that by the conventional solution doping process. The absorption peaks appeared near 725nm, 880nm, and 1050nm are attributed to the PbTe quantum dots in the fiber core.

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Indium doped ZnO:Al thin films prepared by pulsed laser deposition for transparent conductive oxide electrode applications (펄스 레이저 방법으로 증착된 투명 산화물 전극용 인듐이 도핑된 ZnO:Al 박막)

  • Xian, Cheng-Ji;Lee, Chang-Hyun;Lee, Ye-Na;Seong, Nak-Jin;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.27-27
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    • 2008
  • The different concentration Indium doped ZnO:Al films were grown on glass substrates (Corning 1737) at $200^{\circ}C$ by pulsed laser deposition. The indium doping in AZO films shows the critical effect on the crystallinity, resistivity, and optical properties of the films. The AZO films doped with 0.3 atom % indium content exhibit the highest crystallinity, the lowest resistivity of $4.5\times10^{-4}\Omega$-cm, and the maximum transmittance of 93%. The resistivity of the indium doped-AZO films is strongly related with the crystallinity of the films. The carrier concentration in the indium doped-AZO films linearly increases with increasing indium concentration. The mobility of the AZO films with increasing indium concentration was reduced with an increase in carrier concentration and the decrease in mobility was attributed to the ionized impurity scattering mechanism. In an optical transmittance, the shift of the optical absorption edge to shorter wavelength strongly depends on the electronic carrier concentration in the films.

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