• Proceedings of the Optical Society of Korea Conference
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• 2005.07a
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• pp.234-235
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• 2005

• Proceedings of the Optical Society of Korea Conference
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• 2002.11a
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• pp.156-157
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.22-22
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• 2003

Studies on the optical properties related to the built-in internal field and the carrier localization present in various GaN-based structures are essential not only for the physical interest but in designing practical visible and ultraviolet light emitting device applications with better performance and quantum efficiency. We report on the optical characteristics of various dimensional GaN-based structures such as (i) GaN self-assembled quantum dots grown in Stranski-Krastanov mode (OD), vertically-aligned GaN nanorods (1D), graded-In-content InGaN quantum wells (2D), laterally-overgrown GaN pyramids (3D), and GaN epilayers grown on various substrates. We used a wide variety of optical techniques, such as photoluminescence (PL), PL excitation, micro-PL, cathodoluminescence, optically-pumped stimulated emission, and time-resolved PL spectroscopy. An overview and comparison of the optical characteristics of the above GaN-based structures will be given.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.351-354
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• 1998

In this paper, electrical characteristics of an n-channel Si MOSFET with L$_{s}$=0.6.mu.m under optical illumination are charaterized on wafer. Energetic photons with .gamma.=830nm, hv=1.494eV, P$_{opt}$=300mW are injected near the drain junction, the most photoresponsive region in the device, via optical fiber. We observed significantly increased drain current and transconductance, which is considered to be useful for the implementation of OEICs on silicon substrate, under optical control with P$_{opt}$=300mW. Optical power-dependent physical mechanisms responsible for the variation of electrical characteristics under optical input are also reported.d.d.d.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.10
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• pp.806-813
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• 1991

In this paper, we suggested the diagnosis of the optical FSK transmitter output characteristics using the Micheloson interferometer. The transmitter is designed by the direct frequency modulation effect of a semoconductor laser diode. The optical FSK transmitter consists of a temperature stabilized semiconductor laser diode and an optimally designed equalizer. It is modulated by 100Mbit/s PRBS Generator to diagonosis of Optical FSK transmitter output characteristics. The Michelson Interferometer is used for the optical frequency discriminator which transforms the output frequency of the transmitter to the amplitude of light. The measurement of the performance of the transmitter to the amplitude of light. The measurement of the performance of the transmitter computer the transmitted data and their eye pattern with the simulation results, the received data and their eye pattern. As the result of experiment, the data transfer rate of the transmitters is 100Mbit/s.

• Journal of the Optical Society of Korea
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• v.13 no.4
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• pp.439-444
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• 2009

Accurate evaluation of polarization characteristics in the integrated optic chip (IOC) for interferometric fiber optic gyroscope was performed. Spatial distribution of optical wavetrains caused by the polarization parameters such as local polarization cross-coupling and polarization rejection coefficient of the IOC were measured utilizing the path-matched optical coherence domain polarimetry (PM-OCDP). With the analytic model deduced from Jones matrix representation, we could accurately identify the polarization characteristics of the IOC. Both degree of measurement error due to the imperfect equipment conditions in PM-OCDP and birefringence of IOC chip were also characterized.

• ETRI Journal
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• v.40 no.6
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• pp.794-801
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• 2018

This paper proposes a novel graphene-based optical microelectromechanical systems MEMS accelerometer that is dependent on the intensity modulation and optical properties of graphene. The designed sensing system includes a multilayer graphene finger, a laser diode (LD) light source, a photodiode, and integrated optical waveguides. The proposed accelerometer provides several advantages, such as negligible cross-axis sensitivity, appropriate linearity behavior in the operation range, a relatively broad measurement range, and a significantly wider bandwidth when compared with other important contributions in the literature. Furthermore, the functional characteristics of the proposed device are designed analytically, and are then confirmed using numerical methods. Based on the simulation results, the functional characteristics are as follows: a mechanical sensitivity of 1,019 nm/g, an optical sensitivity of 145.7 %/g, a resonance frequency of 15,553 Hz, a bandwidth of 7 kHz, and a measurement range of ${\pm}10g$. Owing to the obtained functional characteristics, the proposed device is suitable for several applications in which high sensitivity and wide bandwidth are required simultaneously.

• IEIE Transactions on Smart Processing and Computing
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• v.6 no.2
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• pp.71-75
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• 2017

In this paper, a smart optical fingerprint sensor technology that is robust against faked fingerprints. A new lens and prism accurately detect fingerprint ridges and valleys that are needed to express a fingerprint's intrinsic characteristics well. The proposed technology includes light path configuration and an optical fingerprint sensor that can effectively identify faked fingerprint features. Results of simulation show the smart optical fingerprint sensor classifies the characteristics of faked fingerprints made from silicone, gelatin, paper, and rubber, and show that the proposed technology has superior detection performance with faked fingerprints, compared to the existing infrared discrimination method.

• Journal of information and communication convergence engineering
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• v.8 no.4
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• pp.457-460
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• 2010

we have analyzed tens of Giga pulse signal generation using sideband injection locking scheme. The numerical model for semiconductor lasers under the strong optical injection is based on the Lang's equation and has been extended in order to take into account the simultaneous injection of the multiple sidebands of the current-modulated laser. The numerical simulation results show that the unselected sidebands will affect the optical and RF-spectral characteristics even though the semiconductor laser is locked to the target sidebands.

• Proceedings of the Korean Society of Potoscience Conference
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• spring
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• pp.36-37
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• 1999