• E2M - 전기 전자와 첨단 소재
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• 제10권8호
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• pp.778-782
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• 1997

In this paper the electronic and optical properties of various poly(3-alkylthiophene)s differing in alkyl chain length were investigated. And their dependence on temperature were also investigated. The electrical conductivity decreased with the increase of alkyl chain length. In addition optical properties were changed due to the shift of edge energy which was caused by the change of the alkyl chain length and rise of temperature. The conformational change of poly(3-alkylthionphene) depending on the alkyl chain length is believed to be responsible to the change of electronic and optical properties of materials.

• Transactions on Electrical and Electronic Materials
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• 제13권2호
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• pp.102-105
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• 2012

The structural, electrical, and optical properties of layer-by-layer ZnO nanoparticles deposited using sol-gel spin coating technique were studied and now presented. Thicknesses of the thin films were varied by increasing the number of deposited layers. As part of our characterization process, XRD and FE-SEM were used to characterize the structural properties, current-voltage measurements for the electrical properties, and UV-Vis spectra and photoluminescence spectra for the optical properties of the ZnO thin films. ZnO thin films with thicknesses ranging from 14.2 nm to 62.7 nm were used in this work. Film with thickness of 42.7 nm gave the lowest resistivity among all, $1.39{\times}10^{-2}{\Omega}{\cdot}cm$. Photoluminescence spectra showed two peaks which were in the UV emission centered at 380 nm, and visible emission centered at 590 nm. Optical transmittance spectra of the samples indicated that all films were transparent (>88%) in the visible-NIR range. The optical band gap energy was estimated to be 3.21~3.26 eV, with band gap increased with the thin film thickness.

• Transactions on Electrical and Electronic Materials
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• 제15권6호
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• pp.333-337
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• 2014

In this study, the use of a discharging process for charged particles is proposed to achieve an ideal electrical balance or neutralization and to improve the electrical and optical properties of a reflective electronic display. Here, negatively charged particles (white) and positively charged particles (black) are used. The q/m (charge per mass for a particle) values of the black and white particles are $+4.5{\mu}C/g$ and $-4.5{\mu}C/g$, respectively. We compared the movement of the charged particles by varying their discharging time. Stable movement of the charged particles is obtained with an appropriate discharging time, which resulted in improvements of the optical properties of the panel.

• Current Optics and Photonics
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• 제7권1호
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• pp.47-53
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• 2023

We propose a centralized passive-optical-network monitoring scheme using the resonance-spectrum properties of a Fabry-Perot cavity based on fiber Bragg gratings. Each cavity consists of two identical uniform fiber Bragg gratings and a varying cavity length or grating length, which can produce a unique single-mode resonance spectrum for the drop-fiber link. The output spectral properties of each cavity can be easily adjusted by the cavity length or the grating length. The resonance spectrum for each cavity is calculated by the transfer-matrix method. To obtain the peak wavelength of the resonance spectrum more accurately, the effective cavity length is introduced. Each drop fiber with a specific resonance spectrum distinguishes between the peak wavelength or linewidth. We also investigate parameters such as reflectivity and bandwidth, which determine the basic performance of the fiber Bragg grating used, and thus the output-spectrum properties of the Fabry-Perot cavity. The feasibility of the proposed scheme is verified using the Optisystem software for a simplified 1 × 8 passive optical network. The proposed scheme provides a simple, effective solution for passive-optical-network monitoring, especially for a high-density network with small end-user distance difference.

• Journal of the Optical Society of Korea
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• 제7권1호
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• pp.13-19
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• 2003

The effects of strain distribution in quantum wire arrays have been analyzed using a finite-element method including both the hydrostatic and shear strain components. Their effects on the optical properties of the quantum wire arrays are assessed for various types of stress profiles by calculating the optical gain and the polarization dependence. The results show unique polarization dependency, which can be exploited either for the single polarization or the polarization-independent operation in quantum wire photonic devices.

• Journal of the Optical Society of Korea
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• 제17권2호
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• pp.130-135
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• 2013

Based on the extended Huygens-Fresnel principle and generalized Stokes theory, the evolution of polarization properties of beams generated by quasi-homogenous (QH) sources propagating in clear oceanic water was studied by the use of the oceanic turbulence spatial spectrum function. The results show that the beams have similar polarization self-reconstructed behavior under different turbulence conditions in the far field, but if the propagation distance is not long enough, the degree of polarization (DOP) fluctuates with much more complexity than state of polarization (SOP) of QH beams. The self-reconstructed ability of DOP at the special distance in turbulence would get to the best value if the values of coherence of width were chosen suitably, but for SOP, it has no best value.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.103-104
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• 2008

In this paper we report upon an investigation into the effect of DC bias voltage on the electrical and optical properties of Gallium doped zinc oxide (GZO) film. GZO films were deposited on glass substrate without substrate temperature by RF magnetron sputtering from a ZnO target mixed with 5 wt% $Ga_2O_3$. we investigated sample properties of bias voltage change in 0 to -60 V. We were able to achieve as low as $5.89\times10^{-4}$ ${\Omega}cm$ and transmittance over 87%. without substrate temperature.

• 한국전기전자재료학회논문지
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• 제29권4호
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• pp.231-236
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• 2016

A three-electrode type reflective display (electronic paper) is designed to apply an independent electric field to each three electrodes of the cell including two electric-type of particles and electrically neutral color fluid, so single color realization is possible. In particular, the movement of particles and optical properties are decided by the electric field between two electrodes on the lower substrate. So, the effect of electric field by the distance between two electrodes on the lower substrate is studied with electrode spacing with $10{\mu}m$, $15{\mu}m$, $20{\mu}m$, and $25{\mu}m$. By our experimentation, the driving voltage induces more reliable movement of charged particles and the optical properties as compared with the threshold voltage. We ascertain the single color realization and non-inverted particle separation is possible. So the more desirable optical properties are observed in case of the short electrode like $10{\mu}m$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.121-124
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• 2004

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition(MOCVD) and study the physical properties of the GaN layer. We have also investigate the effect of the SiN mask on its optical property. By inserting a SiN mask, (102) the full width at half maximum(FWHM) decreased from 480 arcsec to 409 arcsec. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GgN layer.

• 한국전기전자재료학회논문지
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• 제24권3호
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• pp.177-181
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• 2011

We have studied structural, optical, and electrical properties of the Al-doped ZnO (AZO) thin films being usable in transparent conducting oxides. The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering system. To find optimal properties of AZO for transparent conducting oxides, the RF power in sputtering process was varied as 40 W, 60 W, and 80 W, respectively. As RF power increased, the crystallinity of AZO thin film was decreased, the optical bandgap of AZO thin film increased. The transmittance of the film was over 80% in the visible light range regardless of the changes in RF power. The measurement of Hall effect characterizes the whole thin film as n-type, and the electrical property was improved with increasing RF power. The structural, optical, and electrical properties of the AZO thin films were affected by Al dopant content in AZO thin film.