• Proceedings of the Optical Society of Korea Conference
• /
• 2004.02a
• /
• pp.120-121
• /
• 2004

• Journal of the Optical Society of Korea
• /
• v.7 no.4
• /
• pp.253-257
• /
• 2003

We propose and demonstrate a novel polarization- and wavelength-independent digital electrooptic switch in $Ti:LiNbO_3$ with switching voltage of ${\pm}$32V at $1.55{\mu}m$ wavelength. This $2{\times}2$ integrated optic switch is characterized by a step-like response to the applied voltage. Switching is achieved through adiabatic mode evolution in an asymmetric waveguide junction. An average insertion loss of ∼4.5dB and polarization independent switching with average crosstalk of -12dB are achieved.

• Electrical & Electronic Materials
• /
• v.9 no.6
• /
• pp.584-592
• /
• 1996

Coupling optical modulator which on the $LiTaO_3$ substrate is fabricated by using proton exchange method and self-aligned method. Proton exchange of proton diffusion method was applied to pattern a waveguide on $LiTaO_3$ substrate. The annealing at >$400^{\circ}C$ was carded out to control waveguide width and depth. The depths of the two annealed optical waveguides, which were measured by using .alpha.-step, were 1.435 K.angs. and 1.380 K.angs. Using .alpha.-step facility, we examined that the width of waveguides is increased from 5.mu.m to 6.45 .mu.m and 6.3.mu.m due to the annealing effects. The process of proton exchange was done at 150.deg. C for 120 min, >$200^{\circ}C$ for 60 min and annealing process was done at >$400^{\circ}C$ for 90 min, >$400^{\circ}C$ for 60 min. The high speed coupling optical modulator has very good figures of merits; the measured high frequency power were achieved.

• Journal of the Korean Society for Precision Engineering
• /
• v.25 no.11
• /
• pp.100-106
• /
• 2008

We have studied the characteristic changes of optical device using imprint lithography. An imprinted structure is inherently involved in residual stress due to the temperature and the pressure cycle during fabrication process. A structure with residual stress undergoes stress relaxation, which leads io dimensional change. Therefore, annealing processes was performed to reduce the residual stress of imprinted polymer channel. Reduction of residual stress was confirmed through dimensional change, birefringence, and the mechanical properties. We have fabricated an optical device, and it saw the optical intensity changes within 0.1% for 1 month.

• Proceedings of the Optical Society of Korea Conference
• /
• 2003.02a
• /
• pp.156-157
• /
• 2003

The wavelength converter is considered to be a key element of future dense WDM optical networks. It enables wavelength reuse and resolves contention problem. Moreover, the tunability of the wavelength converter enhance the flexibility of network systems by facilitating reconfigurable dynamic wavelength routing. In order to achieve optically tunable wavelength conversion, we recently proposed and experimentally demonstrated wavelength conversion and tuning based on cascaded sum and difference frequency generation in a Ti：PPLN channel waveguide. (omitted)

• Korean Journal of Optics and Photonics
• /
• v.3 no.4
• /
• pp.258-265
• /
• 1992

A low loss optical waveguide of $P_{2}O_{5}-SiO_{2}$on Si substrate is produced by using the chemical vapour deposition method of $SiO_2$ thin films used in Si technology. Propagation loss of the waveguide layer was 1.65 dB/cm as produced and reduced down to 0.1 dB/cm after heat treatment at $1100^{\circ}C$. By using laser lithography and reactive ion etching method $P_{2}O_{5}-SiO_{2}$ waveguide was produced and subsequently annealed at $1100^{\circ}C$.As a result of this annealing the shape of the waveguide core was changed from rectangular to semi-circular form, and the propagation loss was reduced as down to 0.03 dB/cm at 0.6328$\mu$m and 0.04dB/cm at 1.53$\mu$m. We think that the mechanism of the reduction in propagation loss during the heat treatment is the following: 1) The hydrogen bonding in waveguide layer, which causes absorption loss, is dissociated and diffused out. 2) The roughness of the interface and the micro-structure of the waveguide layer is removed. 3) The irregularities in the cross-sectional shape of the waveguide which was induced during the lithographic process were disappeared by flowing of the waveguide core.

• Korean Journal of Optics and Photonics
• /
• v.30 no.1
• /
• pp.15-22
• /
• 2019

$Si_3N_4$ rib-optical waveguides for evanescent-wave integrated-optical biosensors were analytically interpreted, to derive the single-mode propagation conditions. The integrated-optical biosensor structure based on two-mode interference was proposed, and the rib width and thickness and core thickness for a single-mode and two-mode waveguide (sensing region) were proposed to be $3{\mu}m$, 2 nm, and 150 nm and $3{\mu}m$, 20 nm, and 340 nm respectively. The optical characteristics of each guided-wave mode were investigated utilizing the film mode-matching (FMM) analysis.

• Current Optics and Photonics
• /
• v.4 no.1
• /
• pp.81-81
• /
• 2020

• Proceedings of the Optical Society of Korea Conference
• /
• 1998.08a
• /
• pp.202-203
• /
• 1998

• Proceedings of the Optical Society of Korea Conference
• /
• 2007.07a
• /
• pp.291-292
• /
• 2007