• Journal of Sensor Science and Technology
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• v.23 no.1
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• pp.51-57
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• 2014

The evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ compounded polycrystal powder was deposited on thoroughly etched semi-insulated GaAs(100) substrate by the hot wall epitaxy (HWE) method system. The source and substrate temperatures of optimized growth conditions, were $610^{\circ}C$ and $400^{\circ}C$, respectively.The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34\;eV-(8.81{\times}10^{-4}\;eV/K)T^2/(T+251\;K)$. After the as-grown $MgGa_2Se_4$ single crystal thin films was annealed in Mg-, Se-, and Ga-atmospheres, the origin of point defects of $MgGa_2Se_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Mg}$, $V_{Se}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted $MgGa_2Se_4$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $MgGa_2Se_4$/GaAs did not form the native defects because Ga in $MgGa_2Se_4$ single crystal thin films existed in the form of stable bonds.

• Journal of Korean Society for Geospatial Information Science
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• v.15 no.2 s.40
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• pp.59-66
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• 2007

The digital working environment and its related technology have been rapidly expanding. In the surveying field, we have changed from using optical film cameras and plotters to digital cameras, multi sensors like GPS/INS etc,. The old analog work flow is replaced by a new digital work flow. Accurate data of the land is used in various fields, efficient utilization and management of land, urban planning, disaster and environment management. It is important because it is an essential infrastructure. For this study, LiDAR surveying was used to get points clouds in the study area. It has a high vegetation penetrating advantage and we used a digital process from planning to the final products. Contour lines were made from LiDAR data and compared with national digital base maps (scale 1/1,000 and 1/5,000). As a result, the accuracy and the economical efficiency were evaluated. The accuracy of LiDAR contour data was average $0.089m{\pm}0.062\;m$ and showed high ground detail in complex areas. Compared with 1/1,000 scale contour line production when surveying an area over $100\;km^2$, approximately 48% of the cost was reduced. Therefore we prepose LiDAR surveying as an alternative to modify and update national base maps.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.12
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• pp.100-105
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• 2017

An 8-hydroxyquinoline compound that was synthesized with 8-hydroxyquinoline-2-carboxaldehyde and 4-aminoantipyrine was investigated for use as the sensing material of a fiber-optic copper ion sensor in an aqueous environment. The experiment was conducted with a fiber-optic measurement system, in order to evaluate the relationship between the absorbance peak and copper ion concentration. The synthesized derivative exhibited a (highly selective) chromogenic phenomenon for copper ions among various metal ions in an aqueous environment and showed a specific absorbance peak at a wavelength of 530 nm for copper ions. The effect of mercury ions was investigated to evaluate the selectivity of the prepared synthesized derivatives toward Cu ions. The absorbance was measured at various concentration ratios of Cu and Hg ions (Cu:Hg ratios from 0.05 to 20), and it was found that the absorbance at 530 nm tended to increase with increasing Cu ion concentration. The experimental results also showed the linear relationship between the logarithmic concentration of copper ions and the specific absorbance peak at a wavelength of 530 nm. These results indicate that the synthesized 8-hydroxyquinoline compound has selectivity for copper ions and can be used as a sensing material for fiber-optic copper ion sensors.

• Journal of Sensor Science and Technology
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• v.10 no.5
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• pp.304-313
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• 2001

In this research, we investigate wet-etching properties of GaAs in $NH_4OH-H_2O_2-H_2O$, and develop the fabrication method of GaAs microstructures with rectangular cross section using (001) GaAs substrate. For obtaining wet-etching properties with respect to crystallographic orientation, the etch rates and cross-section etch profiles of (001) GaAs with 16 different compositions and the undercut rates with 5 different compositions are measured using $NH_4OH-H_2O_2-H_2O$ mixed solutions. From these experimental data, a new GaAs micromachining method in bulk (001) GaAs is proposed, and used to fabricate a released microbridges with a rectangular cross section. The developed GaAs micromachining method can be very useful for low-loss, highly-tunable capacitors for RF components and for integration with GaAs optical components.

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.147-153
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• 1998

The strain characteristics of a fiber optic Fabry-Perot pressure sensor with high sensitivity using a $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$ (N/O/N) diaphragm is experimentally investigated. A 600 nm thick N/O/N diaphragm was fabricated by silicon anisotropic etching technology in 44 wt% KOH solution. An interferometric fiber optic pressure sensor has been manufactured by using a fiber optic Fabry-Perot intereferometer and a N/O/N diaphragm. The 2 cm length fiber optic Fabry-Perot interferometers in the continuous length of single mode fiber were produced with two pieces of single mode fiber coated with $TiO_{2}$ dielectric film utilizing the fusion splicing technique. The one end of the fiber optic Fabry-Perot interferometer was bonded to a N/O/N diaphragm. and the other end was connected to an optical setup through a 3 dB coupler. For the N/O/N diaphragm sized $2{\times}2\;mm^{2}$ and $8{\times}8\;mm^{2}$, the pressure sensitivity was measured 0.11 rad/kPa and 1.57 rad/kPa, respectively, and both of the nonlinearities were less than 0.2% FS.

• International Journal of Railway
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• v.1 no.4
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• pp.149-156
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• 2008

During maintenance or construction works in or at the tracks of railways, high risks for passengers and railway staff, especially for the workers on the construction site exist. The high risks result out of the movement of rail vehicles, like trains or construction vehicles, which must be faced by using any available technical and operational technologies for securing them against the environment. Therefore, it is necessary to evaluate the level of protection continuously and to identify new and innovative methods and technologies for the protection of the gang (construction worker, machines and material). Especially on construction sites at line sections with two or more parallel tracks but also with single tracks, there are still a lot of incidents and accidents mostly with seriously injured persons or fatalities. These were mainly gang members that breach the railway-loading gage. By using proper warning or protection systems, the avoidance of such accidents must be achieved. The latest developments. in gang protection systems concern on the one hand fixed barriers in the middle between the construction site and the operated track and on the other hand construction vehicles equipped with automatic warning systems. The disadvantage of such protection methods is that the gang can be warned against an approaching train but a monitoring of the gang members cannot be performed. Only one part of a potential dangerous situation will be detected. If the gang members will overhear the acoustic warning signal of the security staff and the workers will not leave the danger zone in the track, the driver of the approaching train had no chance to react to the dangerous situation. An accident is often inevitable. While the detection of acoustic warning signals by the gang members working on a construction site is very difficult, the acoustical planning of an automatic warning system has to be designed for an acoustic short range level of one meter besides the construction vehicle. The decision about the use of today's technical warning system (fixed systems, automatic warning systems, etc.) must be geared to the technical feasibility and the level of safety which is needed. Criteria for decision guidance to block a track should be developed by danger estimation and economical variables. To realize the actual jurisdiction and to minimize the hazards of railway operations by the use of construction vehicles near the tracks further developments are needed. This means, that the warning systems have to be enhanced to systems for protection, which monitor the realization of the warning signal as a precondition for giving a movement authority to a train. This method can protect against accidents caused by predictable wrongdoing. The actual state of the art technique of using a collective warning combined with additional security staff is no longer acceptable. Therefore, the Institute of Transportation System of the German Aerospace Center in Braunschweig (Germany) will develop a gang warning and protection system based upon imaging methods, with optical sensors such as video in visible and invisible ranges, radar, laser, and other. The advantage of such a system based on the possibility to monitor both the gang itself and the railway-loading gauge either of the parallel track or of the same track still in use. By monitoring both situations, the system will be able to generate a warning message for the approaching train, that there are obstacles in the track, so that the train can be stopped to prevent an accident. And also the gang workers will be warned, while they breach their area.

• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.404-411
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• 2015

A stoichiometric mixture of evaporating materials for $BaAl_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaAl_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaAl_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.29{\times}10^{-16}cm^{-3}$ and $278cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaAl_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.4205eV-(4.3112{\times}10^{-4}eV/K)T^2/(T+232 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaAl_2Se_4$ have been estimated to be 249.4 meV and 263.4 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n =1 and $C_{31}$-exciton peaks for n=31.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.283-290
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• 1999

The $n^+/p/p^+$ junction PERL solar cell of $0.1{\sim}2{\Omega}{\cdot}cm$ (100) p type silicon wafer was fabricated through the following steps; that is, wafer cutting, inverted pyramidally textured surfaces etching by KOH, phosphorus and boron diffusion, anti-reflection coating, grid formation and contact annealing. At this time, the optical characteristics of device surface and the efficiency of doping concentration for resistivity were investigated. And diffusion depth and doping concentration for n+ doping were simulated by silvaco program. Then their results were compared with measured results. Under the illumination of AM (air mass)1.5, $100\;mW/cm^2$ $I_{sc}$, $V_{oc}$, fill factor and the conversion efficiency were 43mA, 0.6 V, 0.62. and 16% respectively.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.3-10
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• 1993

Polycrystalline CdS thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure whose lattice constants $a_{o}$ and $c_{o}$ were $4.1364{\AA}$ and $6.7129{\AA}$, respectively. Its grain size was about $0.35{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility defending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150k and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.81-86
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• 1993

Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition (CBD) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in $N_{2}$ gas at $450^{\circ}C$ it was found hexagonal structure whose lattice parameters $a_{o}$ and $c_{o}$ were $4.302{\AA}$ and $7.014{\AA}$, respectively. Its grain size was about $0.3{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33 K and 200 K, and by polar optical scattering at temperature range of 200 K and 293 K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.