• 한국광학회:학술대회논문집
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• 한국광학회 2002년도 제13회 정기총회 및 2002년도 동계학술발표회
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• pp.270-271
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• 2002

• 한국광학회:학술대회논문집
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• 한국광학회 2002년도 제13회 정기총회 및 2002년도 동계학술발표회
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• pp.74-75
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• 2002

• 한국진공학회지
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• 제10권2호
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• pp.194-200
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• 2001

13.56 MHz rf플라즈마를 이용하여 증착된 DLC(diamond-like carbon) 박막의 광학적 특성에 대해 조사하였다. $CH_4$가스를 원료가스로 하여 PECVD법에 의해 DLC 박막을 형성하였으며 이때 RF power, working pressure, 보조가스의 종류 및 양에 따른 투과도(transmittance)와 optical band gap의 변화를 관찰하였다. RF power가 증가하고 working pressure가 높을수록 optical band gap이 감소하는 결과를 얻을 수 있었고. FT-IR분석을 이용하여 탄소-수소 결합 양을 관찰함으로써 DLC 박막의 결합구조 변화를 증명할 수 있었다. 그리고 수소와 질소를 첨가한 경우 증착시 탄소-수소 결합을 끊는 역할을 하여 optical band gap이 감소하는 결과를 얻을 수 있었다.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.924-930
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• 1998

In this study, we describe the properties of an electro-optical modulator with CPW(coplanar waveguide) electrode fabricated on $LiNvO_3$ optical waveguide, that is applicable to optical communications. These optical modulators have features that use a buffer layer to reduce velocity mismatch between microwaves and optical wave as well as employ CPW to improve impedance and propagation mode mismatch between the electrode and the external circuits. And an annealed proton exchange technique for obtaining low-loss optical waveguides and good reproducibility was employed. Taking into consideration the mentioned background, to achieve the lower driving voltage of optical modulator, we have re-disigned the longer interaction length. And their device properties are discussed also. As a result, fabricated optical modulators of good 10Gps operation and low voltage(5.6V of the halfwave lengfth voltage) at an $1.5{\mu}m$ wavelength are achived with good reproducibility.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.173-173
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• 2010

$Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.

• 한국인쇄학회지
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• 제15권1호
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• pp.85-96
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• 1997

The color difference between original and printed copy is affected mainly by ink trapping and optical properties of overprinted ink layer. Since the general expression itself about ink trapping is affected also by the optical properties, the analysis of color difference using the ink trapping only cannot be certain. This study will show a new approaching method for optical analysis of spectral reflectance and the effect of printing sequence on color difference in multi-color overprints under the condition of excluding completely the ink trapping problems by means of using transparent film as a substrate.

• 한국안광학회지
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• 제2권1호
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• pp.45-54
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• 1997

광학 기기에 잘 사용되는 접안렌즈들 중에서 Huygenian, Ramsden, Kellner, Erfle의 4가지 형태를 선정하여 그들의 광학적 성능을 계산하였으며 이들을 비교하여 형태별 특성을 조사하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1079-1081
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• 2006

Optical and electrical properties of various transparent conducting oxides (ITO, AZO, ITO/Ag/ITO, AZO/Ag/AZO) were investigated for anode of OLED display. ITO/Ag/ITO multi-layer anode has much better electrical and optical characteristics than other films, and OLED on that anode showed lower threshold voltage and better luminescence.

• Journal of Electrical Engineering and Technology
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• 제12권1호
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• pp.284-287
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• 2017

This paper introduces liquid crystal (LC) alignment and its electro-optical properties in the LC cells with silver nanowire (AgNW) networks. The AgNW network was used as an electrode of LC cell as a substitute for an indium-tin-oxide (ITO) film. LC alignment characteristics in the LC cell using AgNW networks, which have two different sheet resistances of $60{\Omega}/m^2$ and $80{\Omega}/m^2$, were observed. The LC alignment characteristics including pretilt angle, LC alignment state, and thermal stability are similar irrespective of sheet resistance of AgNW network. However, twisted-nematic (TN)-LC cell normally operated when using AgNW network with sheet resistance of $80{\Omega}/m^2$. Electrooptical properties of TN-LC cell exhibited competitive performance compared to those of TN-LC cell based on conventional ITO electrode, which allow new approaches to replace conventional ITO electrode in display technology.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.51.1-51.1
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• 2010

$Y_2O_3$ $Er_2O_3$ and $Nd_2O_3$ doped polycrystalline silicon nitride were prepared by hot pressed sintering at $1850^{\circ}C$ and their optical transmittance were investigated in visible and in infrared region. Mechanical and tribological properties were also investigated. Grain growth in silicon nitride was reduced with addition of $Y_2O_3$ and $Nd_2O_3$. 1 wt.% of each rare earth metal were sintered with 3 wt.% MgO, 9wt.% AlN and 87 wt.% of ${\alpha}-Si_3N_4$. Adding these rare earth metal oxides shows good mechanical properties as high strength and toughness and also shows low friction coefficient.