• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.10
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• pp.1829-1834
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• 2008

An optical switch/modulator is designed and the light propagating characteristics is analyzed by the simplified BPM. The distinctive feature of the switch/modulator is that all the waveguide branches are designed to be single-mode. Principle of the device is based on the coupled mode theory in the Y-junction interconnecting waveguide. In spite of all the waveguides are designed to be single-mode, adjusting the interconnecting waveguide length of the device, the same characteristics as existing device up to date is obtainable. Numerical results show that the switching characteristics periodically depends on the interconnecting waveguide length with a spatial of about 150${\mu}m$ in the Ti:LiNbO3 step index waveguide. The concept of design would be utilized effectively in fabricating the monolithic high density of optical integrated circuit.

• Electrical & Electronic Materials
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• v.9 no.6
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• pp.584-592
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• 1996

Coupling optical modulator which on the $LiTaO_3$ substrate is fabricated by using proton exchange method and self-aligned method. Proton exchange of proton diffusion method was applied to pattern a waveguide on $LiTaO_3$ substrate. The annealing at >$400^{\circ}C$ was carded out to control waveguide width and depth. The depths of the two annealed optical waveguides, which were measured by using .alpha.-step, were 1.435 K.angs. and 1.380 K.angs. Using .alpha.-step facility, we examined that the width of waveguides is increased from 5.mu.m to 6.45 .mu.m and 6.3.mu.m due to the annealing effects. The process of proton exchange was done at 150.deg. C for 120 min, >$200^{\circ}C$ for 60 min and annealing process was done at >$400^{\circ}C$ for 90 min, >$400^{\circ}C$ for 60 min. The high speed coupling optical modulator has very good figures of merits; the measured high frequency power were achieved.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.20 no.1
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• pp.206-213
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• 1996

Third order correlation funciton is to be advantageous to detect unique features embedded in various random signals that are undetectable with second order correlation or power spectrum. In this paper, we will introduce optical modulator which consists of a laser light source, 2-dimensional ultrasonic diffractor cell with signal controlling circuitry, and a CCD camera connected to personal computer for image processing. With this modulator, the third order correlaiton pattern of signal can be immediately obtained at the camera due to parallel nature of optical computing.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.817-820
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• 2002

In this letter, we developed a 400Gb/s optical transmitter using an electroabsorption modulator and measured its characteristics. As a result, the extinction ratio, the output power and the wavelength are varied while DC bias voltage and temperature of an electroabsorption modulator are changed. Based upon these experimental results, a design of 400Gb/s optical transmitter can be optimized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.282-285
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• 1999

Fabrication and pakaging method for low delve voltage and 10Gbps Ti diffused waveguide LiNbO$_3$ optical intensity modulator are described. Optical waveguides were prepared by conventionaly electron-beam evaporation and Ti-indiffusion into Z-cut plate LiNbO$_3$. Traveling-wave electrodes were used for obtaining the wideband frequency response and impedance matching. Microwave effective index and characteristic impedance measured by time domain reflectometry and compared with the calculated value by conformal mapping. The characteristics of 10Gbps modulator at the 1550nm wavelength are as follows : perfect modulation voltage Is about 5V, optical insertion loss Is about 5dB, 3-dB bandwidth is 10GHz, and characteristic impedance is about 50$\Omega$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.77-79
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• 1997

A 5Gbps LiNb $O_3$ optical phase modulator was packaged and described. A APE(annealed proton exchange) method was employed for the optical waveguide and the electrode of ACPS (asymmetric coplanar strip) type was formed by electro-plating on LiNb $O_3$ fort applying microwave signal. The resulted phase modulator exhibited a single mode at a 1550nm wavelength and Its modulation bandwidth, Insertion loss and driving voltage showed 7$^{GHz}$, 3. $O^{dB}$ and 6V. respectively.y.

• Current Optics and Photonics
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• v.3 no.3
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• pp.215-219
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• 2019

Chromatic aberrations induced by Risley prisms made of a single material can be substantially compensated using a liquid crystal spatial light modulator while still keeping the prism pairs compact, simple and lightweight. A ${\pm}10^{\circ}$ optical scanning imaging system with ${\pm}2^{\circ}$instantaneous field based on LC-SLM correction is designed as an example. The ultimate simulation results show that this kind of scheme is an effective way of improving imaging performance dynamically across the full field of scanning.

• Journal of The Institute of Information and Telecommunication Facilities Engineering
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• v.4 no.1
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• pp.15-21
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• 2005

One of the core technology in WDM-PON system is a generation and modulation technique of the optical source in Optical Network Unit (ONU). In this paper, we propose a reflective semiconductor optical amplifier (RSOA) as a modulator in WDM-PON system. Its performance is analyzed by simulation and actual experimentation. Using RSOA in WDM-PON system as a modulator, it obtains higher gain compared to the conventional SOA due to the double pass gain effect. Furthermore RSOA can provide high gain with comparatively low input power. This is very helpful when we set up the actually system because using lower input power, it can reduce the load of the driving circuit which makes very economical module structure. Therefore, when RSOA is used as a modulator, not only it gives noise suppression effect, but also provides certain amount of gain as well. In addition, comparing with conventional SOA which gives fairly large insertion loss, RSOA can provides more important merits.

• Korean Journal of Optics and Photonics
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• v.15 no.5
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• pp.475-482
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• 2004

We have fabricated a LiNbO$_3$ travelling-wave optical modulator. The travelling-wave modulator consisted of M-Z(Mach-Zehnder) interferometer and CPW(Coplanar Waveguide) travelling-wave electrodes. Design of CPW electrodes were performed by SOR(Successive Over Relaxation) to obtain the conditions of Microwave effective index and impedance matching. The fabricated modulator had -3.2 dB insertion loss, and S$_{11}$ below -15 dB up to 12 GHz, S$_{21}$ better than -3 dB upto 7 GHz. It turned out that the optical response showed the 3 dB bandwidth of above 12 GHz.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.270-271
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• 2000

Among many optical modulators, we are interested in traveling-wave(TW) multiple quantum well(MQW) electro-absorption modulator which can be used for wide-band applications, covering DC to 30GHz or higher frequencies. In this study, we simulate a 1.3mm InGaAs/lnGaAsP TW MQW EAM using the 3D Finite Difference-Time Domain (FDTD) method. We identify that several geometric factors affect Microwave charateristics. Our calculated data provide useful information to optimize and fabricate ridge-type TW CPW EAM.