• 한국광학회:학술대회논문집
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• 한국광학회 2002년도 하계학술발표회
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• pp.172-173
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• 2002

As feature sizes of circuits and devices approach 100 m and chip frequencies climb into the upper gigahertz to terahertz range, it becomes increasingly important to have a convenient method of characterizing properties of thin dielectric films in the GHz to THz frequency range [1]. To measure the dielectric and optical properties of materials at THz frequency, a TH2 time-domain spectroscopy has been utilized during past decade. (중략)

• 대한전기학회논문지
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• 제31권11호
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• pp.141-145
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• 1982

Optical absorption properties of an orphous Se film due to interband electronic transitions are observed in the visible range by varying the folm thickness. Amorphous Se films were prepared by evaporation method. As the experimental results, it is found that optical energy gap is around 2.07(e V), and the optical constants depend on the film thickness, evaporation-deposition conditions, and incident photon energy.

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.1003-1010
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• 2000

Thin films of vanadium oxide(VOx) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. Crystal structure, surface morphology, chemical composition, molecular structure and optical properites of films in-situ annealed in O$_2$ambient with various heat-treatment conditions are characterized through XRD, SEM, AES, RBS, RTIR and optical absorption measurements. The films annealed below 200$\^{C}$ are amorphous, and those annealed above 300$\^{C}$ are polycrystalline. The growth of grains and the transition of vanadium oxide into the higher oxide have been observed with increasing the annealing temperature and time. The increase of O/V ratio with increasing the annealing temperature and time is attributed to the diffusion of oxygen and the partial filling of oxygen vacancies. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. Also indirect and direct optical band gaps were increased with increasing the annealing temperature and time.

• 한국재료학회지
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• 제19권3호
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• pp.125-131
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• 2009

In this report, the structural and optical properties of sol-gel derived $Mg_xZn_{1-x}O$ thin films upon changes in the composition and annealing temperature were investigated. The $Mg^{2+}$ content and the annealing temperature were varied in the range of $0{\leq}x{\leq}0.35$ and $400^{\circ}C{\leq}T{\leq}600^{\circ}C$, respectively. The films exhibited a hexagonal wurtzite structure of a polycrystalline nature. The optical transmittance exceeded 85% and the optical band gap of the film was tuned as high as 3.84 eV at a value of x = 0.35 (annealed at $400^{\circ}C$), which was evidently the maximum $Mg^{2+}$ content for the single-phase polycrystalline $Mg_xZn_{1-x}O$ thin films prepared in this experiment. The optical band gap and photoluminescence emission were tailored to the higher energy side while maintaining crystallinity without a significant change of the lattice constant.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.225-227
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• 1994

The second-order nonlinear optical effect, especially the second harmonic generation, in Langmuir-Blodgett(LB) films have get much attention over the past few years. For second harmonic generation(SHG) of the ultrathin organic films, the multilayer structure of the film should have the noncentrosymmetric arrangements of molecules. The Langmuir-Blodgett technique can result in the production of thin films of precisely controlled dimensions and structure. In this paper, n-octadecyl 4-(4'-nitrophenylazo)-1-naphthyl ether, ONNE(azohenzene derivative), was synthesized and the optical properties of ONNE was studied. Nonccntrosymmctric Z-type LB films of ONNE were prepared and SHG intensity of the film were measured. The structural characteristics of floating monolayer(L film) and LB film of ONNE were discussed with $\pi$-A isotherm. UV-visible absorption spectroscopy and spectroscopic ellipsometry. The polarized UV-visible absorption spectroscopy and SHO intensity suggest the molecular orientation in LB film.

• 한국광학회지
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• 제8권5호
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• pp.382-386
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• 1997

MgF$_{2}$와 TiO$_{2}$를 각각 다른 두 증발원으로부터 동시에 증착시켜 혼합 박막을 제작하였다. 박막의 특성을 개선시키기 위해 이온 보조 증착(IAD)을 하였다. 제작된 MgF$_{2}$-TiO$_{2}$ 혼합 박막의 원소 조성비, 광학적 특성과 결정 구조를 분석하였다. 상대적 증착률을 달리하여 제작된 MgF$_{2}$-TiO$_{2}$ 혼합 박막의 Mg:Ti의 조성비는 비선형적으로 변화하였으며, MgF$_{2}$의 조성비를 상대적으로 증가시킴에 따라 혼합 박막의 굴절률은 감소하였고 Drude 모델을 잘 만족함을 알 수 있었다. 그리고 MgF$_{2}$의 조성비가 증가할수록 비정질인 TiO$_{2}$ 구조 사이에 다결정질인 MgF$_{2}$의 양이 증가하여 결정성을 갖는 박막으로 성장함을 확인하였다.

• 한국세라믹학회지
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• 제40권11호
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• pp.1113-1119
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• 2003

저온 박막 공정을 위해 비등점이 낮은 용매인 isopropanol을 사용하였고, 용질로 zinc acetate의 몰 농도를 0.3∼1.3 mol/l까지 변화시켜 sol을 합성하였다. Zn 농도 변화에 따른 ZnO 박막의 구조 및 광학, 전기적 특성을 분석하였다. XRD 측정에서 Zn의 농도가 0.7 mol/l 일 때 c-축으로 결정 배향성이 뚜렷하였다. SEM으로 박막의 표면 morphology를 관찰한 결과 0.7 mol/l 에서 균일한 표면층을 갖는 나노구조를 이루고 있었다. UV-vis. 측정을 통한 ZnO 박막의 광투과도는 Zn의 농도가 0.7 mol/l 이하에서 87%였으나, 1.0 mol/l 이상의 농도에서는 급격히 감소하였다. 이때 광 밴드갭 에너지는 3.07∼3.22 eV의 값을 나타내며, 벌크 ZnO의 특성과 유사하였다. 박막의 전기 비저항 값은 150 $\Omega$-cm로 Zn의 농도변화에 따라 큰 변화를 보이지 않았으며, I-V 특성분석에서 전형적인 ohmic contact 특성을 보였다.

• 대한금속재료학회지
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• 제49권7호
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• pp.583-588
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• 2011

$Cd_xZn_{1-x}O$ thin films were grown on quartz substrates by using the sol-gel spin-coating method. The mole fraction, x, of the $Cd_xZn_{1-x}O$ thin films was controlled from 0 to 1 by changes in the content ratio of the cadmium acetate dehydrate [$Cd{(CH_3COO)}_2{\cdot}2H_2O$] and zinc acetate dehydrate [$Zn{(CH_3COO)}_2{\cdot}2H_2O$]. The effects of the mole fraction on the morphological, structural, and optical properties of the $Cd_xZn_{1-x}O$ thin films were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-visible spectroscopy. The $Cd_xZn_{1-x}O$ thin films exhibited the polygonal surface morphology and their grain size was increased ranging from 42.1 to 63.9 nm with the increase in the mole fraction. It was observed that the absorption bandgap of the $Cd_xZn_{1-x}O$ thin films decreased from 3.25 to 2.16 eV as the mole fraction increased and the Urbach energy ($E_U$) values changed inversely to the optical bandgap of the $Cd_xZn_{1-x}O$ thin films.

• 한국전기전자재료학회논문지
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• 제18권2호
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• pp.116-119
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• 2005

Al doped ZnO thin films (ZnO:Al) were deposited on poly carbonate (PC) substrate by rf magnetron sputtering. In addition, the electrical, optical properties of the films prepared at various conditions were investigated. As the sputter power increased, the resistivity of ZnO:Al films decreased, regardless of substrate types. However, the resistivity of the films increased with the sputter pressure. The ZnO:Al films were increasingly dark gray colored as the sputter power increased, resulting in the loss of transmittance. High quality films with resistivity as low as 1.43${\times}$10$^{-4}$ Ω-cm and transmittance over 80 % have been obtained by suitably controlling the deposition parameters.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.201-201
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• 2012

Using materials with high thermal conductivity is a matter of great concern in the field of thermal management. In this study, we present our experimental results on an important physical property of carbon nanotube (CNT) films, two-dimensional thermal conductivity obtained by using an optical method based on Raman spectroscopy. We prepared four kinds of CNT films to investigate the effect of CNT type on heat spreading performance of films. This first comparative study using the optical method shows that the arc-discharge single-walled carbon nanotubes yield the best heat spreading film. And we observed thermal conductivity values of CNT films with various transmittances and found that the Raman method works as long as the sample is a transparent film. This study provides useful information on characterization of thermal conduction in transparent CNT films and could be an important step toward high-performance carbon-based heat spreading films.