• Title/Summary/Keyword: Omega phase

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Design of the Microwave Oscillator with the C type DGS Resonator (C형태의 DGS 공진기를 이용한 초고주파 발진기 설계)

  • Kim, Gi-Rae
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.8 no.4
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    • pp.243-248
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    • 2015
  • Since phase noise is one of the most important parameters in the design of microwave oscillators, several methods have been proposed to reduce the phase noise. These methods have focused on improving the quality factor of resonators, which result in low phase noise oscillators. Dielectric resonators have been widely used for low phase noise in microwave oscillators due to their high quality factor. However this cannot be used in MMIC oscillators because they have a 3D structure. In this paper, to overcome this problem a novel resonator using open ring type DGS is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator, and oscillator for 5.8GHz band is designed using proposed DGS resonator. The open ring type DGS resonator is composed of DGS cell etched on ground plane under $50{\Omega}$ microstrip line. At the fundamental frequency of 5.8GHz, 6.1dBm output power and -82.7 dBc@100kHz phase noise have been measured for oscillator with ring type DGS resonator. The phase noise characteristics of oscillator is improved about 96.5dB compared to one using the general ${\lambda}/4$ microstrip resonator.

An Area-Efficient DC-DC Converter with Poly-Si TFT for System-On-Glass (System-On-Glass를 위한 Poly-Si TFT 소 면적 DC-DC 변환회로)

  • Lee Kyun-Lyeol;Kim Dae-June;Yoo Changsik
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.2 s.332
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    • pp.1-8
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    • 2005
  • An area-efficient DC-DC voltage up-converter in a poly-Si TFT technology for system-on-glass is described which provides low-ripple output. The voltage up-converter is composed of charge-pumping circuit, comparator with threshold voltage mismatch compensation, oscillator, buffer, and delay circuit for multi-phase clock generation. The low ripple output is obtained by multi-phase clocking without increasing neither clock frequency nor filtering capacitor The measurement results have shown that the ripple on the output voltage with 4-phase clocking is 123mV, while Dickson and conventional cross-coupled charge pump has 590mV and 215mV voltage ripple, respectively, for $Rout=100k\Omega$, Cout-100pF, and fclk=1MHz. The filtering capacitor required for 50mV ripple voltage is 1029pF and 575pF for Dickson and conventional cross-coupled structure, for Iout=100uA, and fclk=1MHz, while the proposed multi-phase clocking DC-DC converter with 4-phase and 6-phase clocking requires only 290pF and 157pF, respectively. The efficiency of conventional and the multi-phase clocking DC-DC converter with 4-phase clocking is $65.7\%\;and\;65.3\%$, respectively, while Dickson charge pump has $59\%$ efficiency.

Rapid thermal annealing temperature effects on the ohmic behavior of the Pd/Ge-based contact to n-type InGaAs (n형 InGaAs에 형성된 Pd/Ge계 오믹 접촉 특성에 미치는 급속 열처리 온도의 영향)

  • 김일호;박성호;김좌연;이종민;이태우;박문평
    • Journal of the Korean Vacuum Society
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    • v.7 no.1
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    • pp.24-28
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    • 1998
  • Pd/Ge ohmic contact system on n-type InGaAs was studied. A good ohmic begavior by rapid thermal annealing was shown up to $400^{\circ}C$, and the specific contact resistance was reduced to low-$10^-6\Omega\textrm{cm}^2$EX>. However, above $425^{\circ}C$ it was deteriorated by intermixing and phase reaction of ohmic metals and InGaAs substrate. No remarkable phase change was observed below $350^{\circ}C$, but the reaction was initiated at ~$375^{\circ}C$ and considerable phase change was found above $425^{\circ}C$. Non-spiking and planar interfaces were observed even when annealed at $425^{\circ}C$, and smooth and shiny surface was kept up to $400^{\circ}C$.

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Effect of Bi4Zr3O12 on the properties of (KxNa1-x)NbO3 based ceramics

  • Mgbemere, Henry. E.;Akano, Theddeus T.;Schneider, Gerold. A.
    • Advances in materials Research
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    • v.5 no.2
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    • pp.93-105
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    • 2016
  • KNN-based ceramics modified with small amounts of $Bi_4Zr_3O_{12}$ (BiZ) has been synthesized using high-throughput experimentation (HTE). The results from X-ray diffraction show that for samples with base composition $(K_{0.5}Na_{0.5})NbO_3$ (KNN), the phase present changes from orthorhombic to pseudo-cubic with more than 0.2 mol% BiZ addition; for samples with base composition $(K_{0.48}Na_{0.48}Li_{0.04})(Nb_{0.9}Ta_{0.1})O_3$ (KNNLT), the phase present changes from a mixture of orthorhombic and tetragonal symmetry to pseudo-cubic with more than 0.4 mol % while for samples with base composition $(K_{0.48}Na_{0.48}Li_{0.04})(Nb_{0.86}Ta_{0.1}Sb_{0.04})O_3$ (KNNLST), the phase present is tetragonal with <0.3 mol% BiZ addition and transforms to pseudo-cubic with more dopant addition. The microstructures of the samples show that addition of BiZ decreases the average grain size and increases the volume of pores at the grain boundaries. The values of dielectric constant for KNN and KNNLT compositions increase slightly with BiZ addition while that for KNNLST decreases gradually with BiZ addition. The dielectric loss values are between 0.02 and 0.04 for KNNLT and KNNLST compositions while they are ~ 0.05 for KNN samples. The resistivity values increases with BiZ addition and values in the range of $10^{10}{\Omega}cm$ and $10^{12}{\Omega}cm$ are obtained. The piezoelectric charge coefficient ($d{^*}_{33}$) is highest for KNNLST samples and decreases gradually from ~400 pm/V to ~100 pm/V with BiZ addition.

Development of PWM Converter System for Solar Cell Silicon Ingot Glowing 120kW 3kA (태양전지 실리콘 결정 성장용 120kW 3kA PWM 컨버터 시스템 개발)

  • Kim, Min-Huei;Park, Young-Sik
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.63 no.3
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    • pp.125-130
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    • 2014
  • This paper is research result for a development of solar cell silicon ingot glowing(SCSIG) PWM converter system for 120[kW] 3[kA]. The system include 3-phase AC-DC rectifier diode converter of input voltage AC 460[V] and 60[Hz], DC-AC single phase full bridge PWM inverter of high frequency, AC-DC single-phase full wave rectifier using center-tapped of transformer for low voltage 50[V] and large current 3,000[A], carbon resistor load 0.2 [$m{\Omega}$]. PWM switching frequency for IGBT inverter control set 15KHz. The suggested researching contents are designed data sheets of power converter system, PSIM simulation, operating characteristics and analysis results of developed SCSIG system.

Possible p-wave condensed conductor (or superconductor) for La$_{1-x}Ca_xMnO_3$ films (La$_{1-x}Ca_xMnO_3$ 박막에서 p파 초전도의 가능성)

  • Kim, Hyun-Tak;Kang, Kwang-Yong
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.200-205
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    • 1999
  • In the ferromagnetic phase with electrons for La$_{1-x}$(Ca or Sr)$_x$MnO$_3$, films, a remnant resistivity of the order of 10$^{-8}$ ${\omega}$m is observed up to 100 K and increases exponentially with temperature up to T$_c$ and above one Tesla as a function of magnetic field strength (a positive magnetoresistivity). The phase below T$_c$ is regarded as a polaronic state with a polaronic tunneling conduction. Possible p-wave condensation (or superconductor) with a parabolic density of states and the phase separation are discussed on the basis of the two-fold degeneracy of ${\varrho}_{\delta}$ orbitals.

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Development of PWM Converter System for Sapphire Silicon Ingot Glowing of 80kW 10kA (사파이어 실리콘 결정 성장용 80kW 10kA PWM 컨버터 시스템 개발)

  • Kim, Min-Huei;Park, Young-Sik
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.28 no.11
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    • pp.33-41
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    • 2014
  • This paper is research result for a development of sapphire silicon ingot glowing(SSIG) PWM converter system for 80kW 10kA. The system include 3-phase AC-DC diode rectifier of input voltage AC 380V and 60Hz, DC-AC single phase full bridge PWM inverter of high frequency, AC-DC single-phase full wave rectifier using center-tapped of transformer for low voltage 8.0V and large current 10,000A of output specification, tungsten resistor load 0.1[$m{\Omega}$]. PWM switching frequency for IGBT inverter control set 30kHz. The suggested researching contents are designed data sheets of power converter system, PSIM simulation, operating characteristics and analysis results of developed SSIG system. This paper propose

A Numerical Study on the Aerodynamic Characteristics for a HAWT of NREL Phase VI (NREL Phase VI 수평축 풍력터빈의 공력특성에 관한 수치적 연구)

  • Mo, Jang-Oh;Lee, Young-Ho
    • Journal of Advanced Marine Engineering and Technology
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    • v.33 no.6
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    • pp.886-895
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    • 2009
  • The purpose of this work is to compare and analyze computed results with experimental data of NREL (National Renewable Energy Laboratory) Phase VI for the whole operating conditions of various wind speeds using $\kappa-\omega$ turbulence model provided in the commercial code, FLUENT. Performance results such as power coefficient, shaft torque, pressure coefficient show a good agreement with experimental data. But, root bending moment is over-predicted than the experimentally measured value by about 30% for the whole operating conditions because of indefinite measurement reference. Nevertheless, these results qualitatively show a good tendency in the aspect of aerodynamic performance. As wind speed increases, streamlines on the surface of blade show more and more complex pattern.

Analysis of the Phase Angle for High Precision 10 A Calculable Shunt (초 정밀 10A Shunt 개발을 위한 위상각 해석)

  • Wijesinghe, W.M.S.;Park, Young-Tae;Ko, Kyoung-Jin
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.977-978
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    • 2007
  • The phase angle which is mainly depend on time constant $\tau$ of the calculable 10 A and 0.1 ${\Omega}ac/dc$ resistor has been analysed. The low values of resistors are usually inductive and time constant $\tau$ very large compare to high values of resistors. The numerical analysis has been shown that the time constant $\tau$ becomes zero when introduce the compensation capacitance geometrically to the resistive coil with proper dimension. As a result a very low phase angle can be achieved within the realizable dimensions.

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Domain formation and expansion during periodic poling of congruent $LiNbO_3$ using external field (조화용융조성 $LiNbO_3$의 주기적 분극 반전 동안 도메인 생성 및 이동에 관한 연구)

  • Kwon, S.W.;Yang, W.S.;Lee, H.M.;Kim, W.K.;Lee, H.Y.;Yoon, D.H.;Song, Y.S.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.16 no.2
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    • pp.53-58
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    • 2006
  • When external field was applied to congruent $LiNbO_3$, it was investgated for domain formation and expansion of $LiNbO_3$. The domain wall velocities of 0.5 mm thickness $LiNbO_3$ were 28.70, 16.02 and $5.75{\mu}m/sec$ under poling field of 23.5, 22.0 and 21.0 kV/mm, respectively. As $1 M{\Omega}$ resistor was used in domain inversion system, harmonic domain inversion was not achieved by rapid domain expansion. And 50% duty cycle periodically poled $LiNbO_3$ have been fabricated by charge control using $10 M{\Omega}$ resistor.