• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.992-998
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• 2009

We investigated the influence of organic solvents on the droplet properties of 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS-pentacene), which was used for semiconductor of organic thin film transistors (OTFTs) and deposited by ink jet printing. From the result of the investigation, the conditions of a suitable solvent is that boiling point should be above $200^{\circ}C$ to reduce coffee stain and the surface tension above 32 dyn/cm to decrease the droplet size. Consequently, we selected tetralin which have a high boiling point ($207^{\circ}C$) and high surface tension (34.3 dyn/cm) as the solvent for TIPS-pentacene, and applied it to OTFTs. In fabrication process the conventional bank process employing photolithography and etching process was replaced by ink jet printed bank process, resulting in simplifying the process. Especially, polyvinylphenol was used for the bank, and the high hydrophobicity could improve the confinement of TIPS molecules inside the bank, enhancing the performance over the conventional hydrophilic polyvinylalcohol bank. The mobility was $0.18\;cm^2/Vs$, current on/off ratio $2.09{\times}10^5$, subthreshold slope 0.42 V/dec, and off state current $0.049\;pA/{\mu}m$.

• Journal of Information Display
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• 제7권4호
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• pp.21-23
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• 2006

We developed a 4.5" 192${\times}$64 active matrix organic light-emitting diode display on a glass using organic thin-film transistor (OTFT) switching-arrays with two transistors and a capacitor in each sub-pixel. The OTFTs has bottom contact structure with a unique gate insulator and pentacene for the active layer. The width and length of the switching OTFT is 800${\mu}m$ and lO${\mu}m$ respectively and the driving OTFT has 1200${\mu}m$ channel width with the same channel length. On/off ratio, mobility, on-current of switching OTFT and on-current of driving OTFT were $10^6,0.3{\sim}0.5$ $cm^2$/V·sec, order of 10 ${\mu}A$ and over 100 ${\mu}A$, respectively. AMOLEDs composed of the OTFT switching arrays and OLEDs made using vacuum deposition method were fabricated and driven to make moving images, successfully.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.323-324
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• 2009

We investigated the electrical properties of tris-isopropylsilylethynyl (TIPS)-pentacene organic thin-film transistors (OTFTs) employing Ni/Ag source/drain electrodes. The gap height between the gate insulator and S/D electrode was controlled by changing the thickness of Ag under-layer(20, 30, 40 and 50nm). After evaporating the Ni under-layer, TIPS pentacene channel material was dropping the gap between the gate insulator and SID electrodes. The electrical proprieties of OTFT such as filed-effect mobility, on/off ratio, threshold voltage and subthreshold slope were significantly influenced by the gap height.

• 폴리머
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• 제30권3호
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• pp.253-258
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• 2006

4 종류의 n형 유기 반도체 물질 F16CuPC, NTCDA, PTCDA, PTCDI C-8을 사용하여 ITO/n형 활성물질/Al gate/n형 활성물질/Al으로 구성되는 세로형 유기 박막트랜지스터를 제작하였다. 캐리어 이동도의 차이를 갖는 유기 물질의 종류와 유기 박막층의 두께 조절에 따른 유기 박막트랜지스터의 전류전압(I-V) 특성 및 전류의 온오프비에 미치는 영향을 조사하였다. PTCDI C-8을 사용한 세로형 유기 박막트랜지스터에서 낮은 구동전압과 높은 스위칭 특성을 보였다. ITO/PEDOT-PSS/P3HT/F16CuPc/Al gate/F16CuPc/Al으로 구성되는 발광트랜지스터를 제작하였고, 20 V에서 최고 0.054의 양자 효율을 나타내었다.

• 한국재료학회지
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• 제16권5호
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• pp.302-307
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• 2006

The formation and processing of organic insulators on the device performance have been studied in the fabrication of organic thin film transistors (OTFTs). The series of polyvinyls, poly-4-vinyl phenol(PVP) and polyvinyltoluene (PVT), were used as solutes and propylene glycol monomethyl ether acetate(PGMEA) as a solvent in the formation of organic insulators. The cross-linking of organic insulators was also attempted by adding the thermosetting material, poly (melamine-co-formaldehyde) as a hardener in the compound. The electrical characteristics measured in the metal-insulator-metal (MIM) structures showed that insulating properties of PVP layers were generally superior to those of PVT layers. Among the layers of PVP series: PVP(10 wt%) copolymer, 5 wt% cross-linked PVP(10 wt%), PVP(20 wt%) copolymer, 5 wt% cross-linked PVP(20 wt%) and 10 wt% cross-linked PVP(20 wt%), the 10 wt% cross-linked PVP(20 wt%) layer showed the lowest leakage current characteristics. Finally, inverted staggered OTFTs using the PVP(20 wt%) copolymer, 5 wt% cross-linked PVP(20 wt%) and 10 wt% cross-linked PVP(20 wt%) as gate insulators were fabricated on the polyether sulphone (PES) substrates. In our experiments, we could obtain the maximum field effect mobility of 0.31 $cm^2/Vs$ in the device from 5 wt% cross-linked PVP(20 wt%) and the highest on/off current ratio of $1.92{\times}10^5$ in the device from 10 wt% cross-linked PVP(20 wt%).

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.506-508
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• 2005

In general, organic TFTs are comprised of four components: gate electrode, gate dielectric, organic active semiconductor layer, and source and drain contacts. The TFT current, in turn, is typically determined by channel length and width, carrier field effect mobility, gate dielectric thickness and permittivity, contact resistance, and biasing conditions. More recently, a number of techniques and processes have been introduced to the fabrication of OTFT circuits and displays that aim specifically at reduced fabrication cost. These include microcontact printing for the patterning of metals and dielectrics, the use of photochemically patterned insulating and conducting films, and inkjet printing for the selective deposition of contacts and interconnect pattern. In the fabrication of organic TFTs, microcontact printing has been used to pattern gate electrodes, gate dielectrics, and source and drain contacts with sufficient yield to allow the fabrication of transistors. We were fabricated a pentacene OTFTs on flexible PEN film. Au/Cr was used for the gate electrode, parylene-c was deposited as the gate dielectric, and Au/Cr was chosen for the source and drain contacts; were all deposited by ion-beam sputtering and patterned by microcontact printing and lift-off process. Prior to the deposition of the organic active layer, the gate dielectric surface was treated with octadecyltrichlorosilane(OTS) from the vapor phase. To complete the device, pentacene was deposited by thermal evaporation and patterned using a parylene-c layer. The device was shown that the carrier field effect mobility, the threshold voltage, the subthreshold slope, and the on/off current ratio were improved.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.653-655
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• 2003

Using stacked organic gate insulators and active layer of pentacene deposited at elevated temperatures, pentacene-based organic thin-film transistors(OTFTs) with improved electrical characteristics have been fabricated. Stacked PVP(Polyvinylphenol)-polystyrene gate insulators could compensate the demerits and take advantage of the merits of each other [1]. Also, for the better device performance, moderate substrate heating and high deposition rate of pentacene active layer was adopted [2, 3].

• 인포메이션 디스플레이
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• 제7권3호
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• pp.4-17
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• 2006

차세대 디스플레이로서, 특히 휴대기기를 위한 플레깃블 디스플레이에 대한 관심이 증가되고 있다. 지난 몇 년간 계속적으로 연구가 이루어져 왔음에도 불구하고, 플렉시블 디스플레이는 아직 하나의 '제품'으로서 시장에 진입하지 못하고 있다. 플렉시블 디스플레이는 플라스틱이나 메탈 호일, 플렉시블 유리와 같은 플렉시블 기판이 쓰이는데, 이것은 가벼우면서 얇고 강하며 제조 측면에서 높은 생산성을 가질뿐만 아니라 착용이 가능할 정도의 자유로운 디자인이 가능하다는 장점을 가지고 있다. 이러한 많은 장점으로 인해 플렉시블 디스플레이의 연구와 개발이 빠르게 진행되고 있다. 지난 몇 년 동안 개발된 전기영동(electrophoretic), 유기전계발광(OLED, organic light-emitting diode), 액정(liquid-crystal)과 관련된 플렉시블 디스플레이에 대해 성능 등을 알아보고, 플렉시블 디스플레이용으로 개발된 플라스틱 기판과 그 위에 형성된 유기박막트랜지스터(OTFTs, organic thin film transistors)의 특성을 분석한다. 그리고 oTFTs의 성능과 제작공정의 이해를 위해 self organized process에 대해 설명하고 마지막으로 중요 연구 과제를 제시한다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1220-1224
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• 2007

The effects of plasma damages to the organic thin film transistor (OTFT) during the fabrication process are investigated; metal deposition process on the organic gate insulator by plasma sputtering mainly generates the process induced damages of bottom contact structured OTFTs. For this study, various deposition methods (thermal evaporation, plasma sputtering, and neutral beam based sputtering) and metals (gold and Indium-Tin Oxide) have been tested for their damage effects onto the Poly 4-vinylphenol(PVP) layer surface as an organic gate insulator. The surface damages are estimated by measuring surface energies and grain shapes of organic semiconductor on the gate insulator. Unlike thermal evaporation and neutral beam based sputtering, conventional plasma sputtering process induces serious damages onto the organic surface as increasing surface energy, decreasing grain sizes, and degrading TFT performance.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1277-1280
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• 2005

A high-aspect-ratio and high-resolution stainless steel shadow mask for organic thin-film transistors (OTFTs) circuit has been fabricated by a new method which combines photochemical machining, micro-electrical discharge machining (micro-EDM), and electrochemical etching (ECE). First, connection lines and source-drain holes are roughly machined by photochemical etching, and then the part of source and drain holes is finished by the combination of micro-EDM and ECE processes. Using this method a $100\;\mu{m}$ thick stainless steel (AISI 304) shadow mask for inverter can be fabricated with the channel length of $30\;\mu{m}\;and\;10\;\mu{m}\;respectively.\;The\;width\;of\;connection line\;is\;150\;\mu{m}$. The aspect ratio of the wall is about 5 and 15, respectively. Metal lines and source-drain electrodes of OTFTs were successfully deposited through the fabricated shadow mask.