• Proceedings of the Korean Information Science Society Conference
• /
• 2012.06a
• /
• pp.251-252
• /
• 2012

본 논문은 기존 Legacy NAND의 성능을 향상시키기 위해 제안된 ONFI (Open NAND Flash Interface) NAND의 특성을 지원하는 컨트롤러를 구현하고, 실제 테스트 보드 제작 및 실험 환경을 구축하여 성능을 측정하였다. 그 결과 인터페이스 속도가 기존 Legacy NAND에 비해 약 6배 증가하였다. 또한 읽기 속도의 경우 약 3배의 성능 향상이 있었다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.11 no.2
• /
• pp.121-129
• /
• 2011

It is progressing as new advents and remarkable developments of mobile device every year. On the upper line reason, NAND FLASH large density memory demands which can be stored into portable devices have been dramatically increasing. Therefore, the cell size of the NAND Flash memory has been scaled down by merely 50% and has been doubling density each per year. [1] However, side effects have arisen the cell distribution and reliability characteristics related to coupling interference, channel disturbance, floating gate electron retention, write-erase cycling owing to shrinking around 20nm technology. Also, FLASH controller to manage shrink effect leads to speed and current issues. In this paper, It will be introduced to solve cycling, retention and fail bit problems of sub-deep micron shrink such as Virtual negative read used in moving read, randomization. The characteristics of retention, cycling and program performance have 3 K per 1 year and 12.7 MB/s respectively. And device size is 179.32 $mm^2$ (16.79 mm ${\times}$ 10.68 mm) in 3 metal 26 nm CMOS.