• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.450-453
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• 2008

We synthesized a new HIL and HTL materials by using phenothiazinly moiety, 1,4-diphenothiazyl-benzene [DPtzB], 3',7',3",7"-tetrakis(N-phenyl-2-naphthylamine)-1,4-diphenothiazyl-benzene[PNA-DPtzB]. Synthesized materials exhibited high Tg in the range of $175\;-\;202^{\circ}C$. These values are much better than commonly used hole transporting materials (2-TNATA and NPB). The OLED device that used DPtzB as a HIL showed the highest efficiency of 4.31cd/A at $10mA/cm^2$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.9
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• pp.400-406
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• 2003

Efficient electrodes are devised for organic luminescent device(OLED). ITO electrode is treated with $O_2$ plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. In the case of device inserted the buffer layer by using the plasma polymerization after $O_2$ plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic are made in the emitting layer. Therefore it realized the device capability of two times in the aspect of luminous efficiency than the device which do not be inserted the buffer layer. Experiments are limited to the device that has the structure of TPD/$AIq_3$, however, the aforementioned electrodes can similarly applied to the organic luminous device and the Polymer luminous device.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.493-496
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• 2009

We report the EL property of blue and blue-violet emitting materials with anthracene moiety as well as a new core structure containing indenopyrazine. Non-doped device using one of indenopyrazine core derivatives was found to exhibit excellent blue-violet color purity of (0.173, 0.063), and narrow emission band of 42nm FWHM. One of anthracene core derivatives with bulky side group also exhibits excellent color coordinates (0.156, 0.088) and an external quantum efficiency of 7.18%.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.633-636
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• 2008

A series novel films of polyimide (PI) and co-polyimide (Co-PI) containing fluorine with colorless, flexible properties was prepared by a two-step process from various commercial aromatic monomers such as 4,4'-(Hexafluoro iso propylidene) diphthalic anhydride (6FDA), 2,2'-Bis(Trifluoromethyl) benzidine (TFDB), 2,2-bis(3-amino-4-hydroxyphenyl) hexafluoropropane (AH6FP) and Bis(4-(3-aminophenoxy)phenyl)sulfone (BAS). Furthermore, these obtained transparent and flexible Co-PI films exhibited excellent thermal stability with the decomposition temperature (at 5% weight loss) around of $500^{\circ}C$ and the glass transition temperature ($T_g$) in the range of $275-350^{\circ}C$.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1010-1013
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• 2006

To understand the exact charge carrier photogeneration properties of photoactive thin films consisting of a ${\pi}-conjugated$ polymer matrix and a triplet dopant, we prepared two types of polymer, poly(9-vinylcarbazole) (PVK) and poly[9,9-bis(2- ethylhexyl)fluorene-2,7-diyl] (PF2/6) doped with triplet emitters for organic light-emitting diodes (OLED), either iridium(III)fac-tris(2-phenylpyridine) $(Ir(ppy)_3)$ or iridium(III)bis[(4,6-fluorophenyl)- $pyridinato-N,C^2'$]picolinate (FIrpic), as thin film devices by using the conventional method. Those doped film devices, as well as pristine film devices, on ITO substrates were characterized by means of steady state photocurrent measurement for a wide spectral range.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.803-805
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• 2009

A highly efficient blue organic light-emitting diode (OLED) was fabricated by using a novel polymer host, poly[3-(carbazol-9-ylmethyl)-3-methyloxetane]. The resultant solution-processed device showed a markedly high efficiency of 29.7 lm/W at 100 cd/$m^2$ by doping 24 wt% blue dye bis(3,5-difluoro-2-(2-pyridyl)-phenyl-(2-carboxy pyridyl) iridium (III).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.376-382
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• 2000

We successfully fabricated OLED(Organic Light Emitting Diodes) with Al cathodes electrode deposited by the DC magnetron sputtering. The effects of a controlled Al cathode layer of an Indium Tin Oxide (ITO)/blended single polymer layer (PVK Bu:PBD:dye)/Al light emitting diodes are described. The PVK (Poly(N-vinylcarbazole)) and Bu-PBD (2-(4-biphenyl-phenyl)-1,3,4-oxadiazole) are used hole transport polymer and electron transport molecule respectively. We found that both current injection and electroluminescence output are significantly different with a variable DC sputtering power. The difference is believed to be due to the influence near the blended polymer layer/cathode interface that results from the DC power and H$\sub$2//O in a chamber. And DC sputtering deposition is an effective way to fabricate Al electrodes with pronounced orientational characteristics without damage occurring to metal-organic interface during the sputtering deposition.

• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.1-4
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• 2017

Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Atomic layer deposition (ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. Moisture permeation has a mechanism to pass through defects, Thin Film Encapsulation using inorganic / organic / inorganic hybrid film has been used as promising technology. $Al_2O_3$ / Polymer / $Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films.

• Journal of Sensor Science and Technology
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• v.28 no.6
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• pp.402-406
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• 2019

Recently, semiconducting organic materials have been spotlighted as next-generation electronic materials based on their tunable electrical and optical properties, low-cost process, and flexibility. However, typical organic semiconductor materials are vulnerable to moisture and oxygen. Therefore, an encapsulation layer is essential for application of electronic devices. In this study, SiN_x thin films deposited at process temperatures below 150 ℃ by plasma-enhanced chemical vapor deposition (PECVD) were characterized for application as an encapsulation layer on organic devices. A single structured SiN_x thin film was optimized as an organic light-emitting diode (OLED) encapsulation layer at process temperature of 80 ℃. The optimized SiN_x film exhibited excellent water vapor transmission rate (WVTR) of less than 5 × 10^-5 g/㎡·day and transmittance of over 87.3% on the visible region with thickness of 1 ㎛. Application of the SiN_x thin film on the top-emitting OLED showed that the PECVD process did not degrade the electrical properties of the device, and the OLED with SiN_x exhibited improved operating lifetime

• Korean Journal of Optics and Photonics
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• v.29 no.6
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• pp.262-267
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• 2018

In this paper, we designed a new antireflective film to improve the optical efficiency of organic light-emitting diode displays (OLEDs). The reflection characteristics in the normal and side viewing directions of OLEDs with the antireflective film were calculated, depending on the degree of polarization and transmittance of the currently used polarizer when used in the antireflective film of an OLED. The results showed that when the polarization degree of the commercial polarizer (99.990~99.995%) is lowered to 99.900%, the average reflectance of the antireflective film is increased by about 0.1% (2.5% in terms of rate of increase) which is difficult to notice with the human eye, while the transmittance is increased by 1.63~3.34% (4.2~8.2% in terms of rate of increase). This study provides an optimal design for high-light-efficiency OLEDs with good antireflection properties.