• Ceramist
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• v.21 no.1
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• pp.64-79
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• 2018

Recent years, OLEDs have been progressed intensively and been widely applied to Display and Lighting industry,Almost 100% internal quantum efficiency was achieved by developing new materials and structure optimization. However, external quantum efficiency was still low due to total internal reflection of light inside OLED devices and absorption of light at the surface of metal electrode. In order to improve external quantum efficiency of OLED devices, various kinds of optical functional structures were introduced to inside and outside of OLED devices to increase light extraction efficiency. In this paper, various efforts to apply optical functional structures in OLED devices were reviewed and way to improve light extraction efficency of OLED devices were discussed.

• Journal of the Korean institute of surface engineering
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• v.42 no.6
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• pp.287-293
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• 2009

The passivation films with epoxy layer on LiF, $SiN_x$ and LiF/$SiN_x$ inorganic layer were fabricated on OLED to protect device from the direct damage of $O_2$ and $H_2O$ and to apply for a buffer layer between OLED device and passivation multi-layer with organic/inorganic hybrid structure as to diminish the thermal stress and expansion. Red OLED doped with 1 vol.% Rubrene in $Alq_3$ was used as a basic device. The device structure was multi-layer of ITO(150 nm) / ELM200_HIL(50 nm) / ELM002_HTL(30 nm) / $Alq_3$: 1 vol.% Rubrene(30 nm) / $Alq_3$(30 nm) / LiF(0.7 nm) / Al(100 nm). LiF/epoxy applied as a protective layer didn't contribute to the improvement of life time. While in case of $SiN_x$/epoxy, damage was done in the passivation process because of difference in heat expansion between films which could occur during the formation of epoxy film. Using LiF/$SiN_x$/epoxy improved lifetime significantly without suffering damage in the process of forming films, therefore, the best structure of passivation film with inorganic/epoxy layers was LiF/$SiN_x$/E1.

• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.39-44
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• 2011

In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under oxygen ambient gases (Ar, $Ar+O_2$) at room temperature. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $O_2$ under $Ar+O_2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/a-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• Journal of the Semiconductor & Display Technology
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• v.9 no.3
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• pp.53-58
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• 2010

In this study, we have investigated the effect of the ambient gases on the characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering under various ambient gases (Ar, $Ar+O_2$ and $Ar+H_2$) at $150^{\circ}C$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.1sccm to 0.5sccm, respectively. All the samples show amorphous structure regardless of ambient gases. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under $Ar+O_2$ while under $Ar+H_2$ atmosphere the electrical resistivity showed minimum value near 0.5sccm of $H_2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO substrates made by configuration of IZO/${\alpha}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current densityvoltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.93-97
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• 2012

In this study, the fabrication and the characteristic analyses of OLED using in-situ passivation are investigated. OLEDs represent a disadvantage in decreasing its life due to the degradation caused by the penetration of moisture and oxygen. After the fabrication of OLED, an in-situ passivation method for inorganic thin films is developed. A process that uses PECVD method which can apply a vapor deposition process at room temperature is also developed. Changes in the degradation and electric characteristics of OLEDs are also analyzed by applying $SiO_2$ and SiNx thin films to OLED as a passivation layer. By applying the fabricated thin film to OLEDs as a passivation layer, the moisture penetration in a single layer film is ensured below $1{\times}10^{-2}\;g/m^2.day$. This leads to the improvement of such degradation characteristics in the application of multilayer films.

• Journal of Institute of Control, Robotics and Systems
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• v.14 no.4
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• pp.348-352
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• 2008

Deformation of the shadow mask is one of the problems encountered during the deposition of organic materials for manufacturing large size organic light emitting diode (OLED). The larger the glass substrate, the larger the shadow mask becomes. As the size of the shadow mask increases, its deformation becomes more severe, thereby making it difficult to deposit organic materials in a precise pattern on a substrate. In this paper, a new method for reducing drooping of the shadow mask for large size OLED vapor depositions is proposed. The proposed shadow mask with cross stripe wires has higher stiffness than the pure shadow mask, which results in reducing drooping of the shadow mask. A commercial FEM program, ANSYS, is used for the evaluation of the proposed shadow mask. The analysis showed that the shadow mask with cross stripe wires have an effect on reducing drooping about 18.6% or more.

• Journal of the Semiconductor & Display Technology
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• v.11 no.1
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• pp.29-33
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• 2012

In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited under hydrogen atmosphere on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under hydrogen ambient gases (Ar, $Ar+H^2$) at room temperature. In order to investigate the influences of the hydrogen, the flow rate of hydrogen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $H^2$ under $Ar+H^2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show good current density-voltage-luminance characteristics. This suggests that flat surface roughness and low electrical resistivity of a-IZO anode film lead to more efficient anode material in OLED devices.

• Korean Journal of Materials Research
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• v.17 no.4
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• pp.198-202
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• 2007

A new organic light emitting device(OLED) with two peak wavelength(blue and yellow) emission was fabricated using the selective doping in a single fluorescent host , and its electrical and optical characteristics were investigated. The fabricated device showed the luminance and efficiency of 1600 $Cd/m^2$ and 2.4 Im/W under the applied voltage of 10V, respectively. And its electroluminescent spectra had two peak wavelengths of 470nm and 560nm emitting bluish white light. The OLED with dual wavelength emission in this experiment is likely to be developed as a white OLED with simpler fluorescent system than conventional devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.60-61
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• 2007

IAZO (indium aluminium zinc oxide) anode films were co-sputtered on glass substrate using a dual target DC magnetron sputtering system. For preparation of IATO films, at constant DC power of IZO (indium zinc oxide) target of 100 W, the DC power of AZO (Aluminum zinc oxide) target was varied from 0 to 100 W. To analyze electrical and optical properties of IAZO anode, Hall measurement examination and UV/V is spectrometer were performed, respectively. In addition, structure of IAZO anode film was examined by X-ray diffraction (XRD) method. Surface smoothness was investigated by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). From co-sputtered IAZO anode, good conductivity($2.32{\times}10^{-4}{\Omega}.cm$) and high transparency(approximately 80%) in the visible range were obtained even at low temperature deposition. Finally, J-V-L characteristics of phosphorescent OLED with IAZO anode were studied by Keithley 2400 and compared with phosphorescent OLED with conventional ITO anode.

• Journal of the Korean institute of surface engineering
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• v.40 no.2
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• pp.77-81
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• 2007

To investigate the characteristics of green light-emitting OLED device, C545T material with $Alq_3$ was doped in the OLED device of $ITO(1500)/2-TNATA(400{\AA})/NPB(80{\AA})/Alq_3:C545T(160{\AA})/Alq_3(240{\AA})/LiF(3{\AA})/Al(2400{\AA})$ structure, which was used as a activator at the respective concentration of 0.5 vol.%, 1 vol.%, 2 vol.% and 3 vol.%. It was observed from the experiments that the device efficiency firstly increased with the increase of C545T concentration and the maximum efficiency of 10.9 cd/A and 4.28 lm/W was obtained at C545T concentration of 1 vol.%, and then the device efficiency decreased as the C545T activator concentration increased above 2 vol.% contents, while the longest lifetime of over 750 hours was obtained at C545T concentration of 1 vol.%.