• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1121-1124
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• 2007

Ink jet printing has been targeted as a key technology for OLED, TFT backplane and other organic semiconductor device fabrication. This presentation will concentrate on aspects of the IJ process, formulation design, jetting performance, interaction with the substrate and resultant printed device performance.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.49-52
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• 2009

We have investigated the effect of the surface roughness of TCO substrate on the characteristics of OLED (organic light emitting diodes) devices. In order to control the surface roughness of ITO thin films, we have processed photolithography and reactive ion etching. The micro-size patterned mask was used, and the etching depth was controlled by changing etching time. The surface morphology of the ITO thin film was observed by FESEM and atomic force microscopy (AFM). And then, organic materials and cathode electrode were sequentially deposited on the ITO thin films. Device structure was ITO/$\alpha$-NPD/DPVB/Alq3/LiF/Al. The DPVB was used as a blue emitting material. The electrical characteristics such as current density vs. voltage and luminescence vs. voltage of OLED devices were measured by using spectrometer (minolta CS-1000A). The current vs. voltage and luminance vs. voltage characteristics were systematically degraded with increasing surface roughness. Furthermore, the retention test clearly presented that the reliability of OLED devices was directly influenced with the surface roughness, which could be interpreted in terms of the concentration of the electric field on the weak and thin organic layers caused by the poor step coverage.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.25-29
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• 2010

We have investigated the effect of surface roughness of TCO substrate on the characteristics of OLED (organic light emitting diodes) devices. In order to control the surface roughness of AZO thin films, we have processed photo-lithography and reactive ion etching. The micro-size patterned mask was used, and the etching depth was controlled by changing etching time. The surface morphology of the AZO thin film was observed by FESEM and atomic force microscopy (AFM). And then, organic materials and cathode electrode were sequentially deposited on the AZO thin films. Device structure was AZO/${\alpha}$-NPD/DPVB/$Alq_3$/LiF/Al. The DPVB was used as a blue emitting material. The electrical characteristics such as current density vs. voltage and luminescence vs. voltage of OLED devices were measured by using spectrometer. The current vs. voltage and luminance vs. voltage characteristics were systematically degraded with increasing surface roughness. Furthermore, the retention test clearly presented that the reliability of OLED devices was directly influenced with the surface roughness, which could be interpreted in terms of the concentration of the electric field on the weak and thin organic layers caused by the poor step coverage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.943-949
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• 2000

In this paper, the single and double heterostructure organic light-emitting devices(OLEDs) were fabricated. The single heterostructure OLED(TYPE 1) is consisted of TPD as a HTL(hole transfer layer) and Alq$_3$as an EML(emitting layer). The double heterostructure OLED(TYPE 2) is consisted of TPD as a HTL, Alq$_3$as an EML and PBD as an ETL(electron transfer layer). The another double heterostructure OLED(TYPE 3) is consisted of TPD as a HTL, PBD as an EML and Alq$_3$as an ETL. We obtained a strong green emission device with maximum EL emission wavelength 500nm in TYPE 3. When the applied voltage was 12V, the emission luminescence was 120.9cd/㎡. The chromaticity index of TYPE 3 was x=0.29, y=0.50. In the characteristic plot of current-voltage, TYPE 3 device was turned on at 6.9V. This voltage was a fairly low turn-on voltage. TYPE 1 and 2 device were turned on at 10V and 8.9V respectively. These types showed no good properties over that of TYPE 3.

• Clean Technology
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• v.29 no.4
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• pp.244-248
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• 2023

Recently, displays play an important role in quickly delivering a lot of information. Research is underway to reproduce various colors close to natural colors. In particular, research is being conducted on the light emitting structure of displays as a method of expressing accurate and rich colors. Due to the advancement of technology and the miniaturization of devices, the need for small but high visibility displays with high efficiency in energy consumption continues to increase. Efforts are being made in various ways to improve OLED efficiency, such as improving carrier injection, structuring devices that can efficiently recombine electrons and holes in a numerical balance, and developing materials with high luminous efficiency. In this study, the electrical and optical properties of the seven-layer stacked structure rear-light emitting blue OLED device were analyzed. 4,4'-Bis(carazol-9-yl)biphenyl:Ir(difppy)2(pic), a blue light emitting material that is easy to manufacture and can be highly efficient and brightened, was used. OLED device manufacturing was performed via the in-situ method in a high vacuum state of 5×10-8 Torr or less using a Sunicel Plus 200 system. The experiment was conducted with a seven-layer structure in which an electron or hole blocking layer (EBL or HBL) was added to a five-layer structure in which an electron or hole injection layer (EIL or HIL) or an electron or hole transport layer (ETL or HTL) was added. Analysis of the electrical and optical properties showed that the device that prevented color diffusion by inserting an EBL layer and a HBL layer showed excellent color purity. The results of this study are expected to greatly contribute to the R&D foundation and practical use of blue OLED display devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.25-26
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• 2008

In this paper, the white organic light-emitting diode(OLED)was fabricated using the DPVBi of blue emitting material and a rubrene of orange color of fluorescent dye by vacuum evaporation processes. The device structure of OLED was Glass/ITO/2T-NATA(15nm)/NPB(3nm)/DPVBi(3nm)/DPVBi rubrene[2%](10nm)/DPVBi(25nm)/$Alq_3$ or New-ETL(60nm) /LiF(0.5nm)/ Al(100nm). The device with the $Alq_3$, layer shows orange color, and the luminance of 1000cd/$m^2$ at an applied voltage of 10.4V. On the other hand, the New-En layer results in white color, CIE coordinates of (0.327, 0.323), and the lowered driving voltage of 5V for achieving the same luminance value.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1467-1469
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• 2007

We report on the effect of ambient gas on the OLED degradation. The operating voltage and quantum efficiency increases when the device is exposed to the atmospheric gas and then returns to the initial level of the device in vacuum when the atmospheric gas is evacuated. These changes in the OLED performance can be attributed to the ambient gas pressure.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.499-502
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• 2008

Effects of a dielectric capping layer on the luminous characteristics of top emitting organic light emitting diodes (TOLEDs) have been analyzed using a classical electromagnetic theory. Special attention was given to the influence of the cavity length on the effectiveness of the capping layer. The luminance characteristics of the TOLEDs influenced by the combined effects of the cavity length and the capping layer thickness. Furthermore, these combined effects also modify the emission spectrum and pattern of the TOLEDs, which result in the improvement of total luminance of the device, but no significant change in the device out-coupling efficiency.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1143-1146
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• 2005

Novel series of electron-transporting hosts, pentavalent aluminum complexes containing 8 hydroxyquinoline ligands and various phenolato ligands were synthesized, and organic light-emitting diodes (OLEDs) were fabricated using these complexes as host materials of phosphorescent emitting device and the fabricated phosphorescent emitting device showed low driving voltage, high efficiency at high current density and good stability under conventional driving condition.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1692-1696
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• 2006

Dopant and host molecules for charge transport layer in OLED have been developed. They enable implementation of the PIN OLED technology in mass production. We review the status of PIN OLED with main focus on top-emission structures and operation stability at elevated temperatures. A green phosphorescent top-emission device with 2.5 V operating voltage and 90 lm/W at 1000 $cd/m^2$ is presented. For a red top-emission device, lifetime exceeding 100,000 h at 500 $cd/m^2$ initial brightness is reported. Operational stability at $80^{\circ}C$ has been investigated. A lifetime of 17,000 h at 500 $cd/m^2$ has been achieved. Finally, we comment on further reduction of the operating voltage in OLED.