• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.898-901
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• 2005

We propose a novel pixel structure using bootstrapped voltage programming for amorphoussilicon TFT backplane of AM-OLED (Active Matrix-Organic Light Emitting Diode) displays. The proposed structure is composed of two TFTs and one capacitor. It operates at low drive voltage ($0{\sim}5V$) which can reduce power consumption comparing with the conventional pixel circuit structure using same OLED material. Also, it can easily control dark level and use commercial mobile LCD ICs. In this paper, we describe the operating principle and the characteristics of the proposed pixel structure and verify the performance by SPICE simulation comparing with the conventional pixel structure.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.793-796
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• 2005

A structure and a design of device were developed to fabricate large-scale active matrix organic light-emitting diode (AMOLED) display with good color purity and high aperture ratio. With these technologies, we developed a full color 14.1 inch WXGA AMOLED display. For the integration of OLED on an active matrix a-Si TFT backplane, an efficient top emission OLED is essential since the TFT circuitry covers a large position of the pixel aperture. These technologies will enable up the OLED applications to larger size displays such as desktop monitors and TVs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.51-54
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• 2007

Top-emission 3.5 inch qVGA IOD (Inverted AMOLED) was fabricated with inverted EL structure driven by a-Si TFT backplane. In order to get stable driving TFT, we used FCP(Field Control Plate) layer which was connected with the source of the driving TFT. And we developed planarization process to planarize the cathode layer which was the bottom layer of inverted OLED. Our unique IOD structure is “a-Si TFT/ Al(Cathode)/ LiF/ LG-201(ETL)/ EML(RGB)/ HTL/ LG-101(HIL & Buffer layer)/ IZO(Anode)”. LG-201(ETL) layer was studied for more efficient electron injection from cathode to EML, and LG-101(HIL & Buffer layer) covered by IZO anode was also explored for decreasing the EL surface damage.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.13.1-13.1
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• 2009

Transparent electronics has attracted many interests, for it can open new applications for consumer electronics, transportation, business, and military. Among them, display backplane, thin film transistor (TFT) array would be the most attractive application. Many researchers have been investigating oxide semiconductors for transparent channel material of TFT since the report for transparent amorphous oxide semiconductor (TAOS) TFT by Hosono group and ZnO TFT by Wager group. Especially, oxide TFTs have been intensively investigated during a couple of years since the first demonstration of ZnO-TFT driving AM-OLED. Many papers regarding the fabrication and performance of oxide TFTs, and active matrix display driven by oxide TFTs have been reported. Now lots of people have confidence in the competitiveness of oxide TFTs for the backplane of AM-Display. Especially, high mobility, uniformity, fairly good stability, and low cost process make oxide TFTs applied even to a large size AM-OLED. Last year, Samsung mobile display, former SID, reported 12" AM-OLED driven by IZGO-TFT and it seems that the remained issue for the mass production is the bias temperature stability. Here, we will introduce the application of oxide TFT and important issue for oxide TFT to be used for the direct printing.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.17-18
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• 2006

Flat Panel Displays (FPDs) have made a revolution in the display industry. TFT-LCD (Thin Film Transistor Liquid Crystal Display) has been the main player of FPD for last two decades. As the industry continuously develops the technology for better performance with lower cost is constantly demanded where several post LCD technologies are being developed. One of the prime candidates of post LCD technology is AMOLED (Active Matrix Organic Light Emitting Diode) that is considered to be an ideal FPD due to its extraordinary display performance and potentially low cost display structure. This technology has been accepted to small size display applications, such as cellular phone, PDA and PMP, etc. In this paper it is discussed that how this technology can be extended to large size display applications, such as TV. The technical issues and solutions of TFT backplane and color patterning of OLED materials are discussed and proposed

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1121-1124
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• 2007

Ink jet printing has been targeted as a key technology for OLED, TFT backplane and other organic semiconductor device fabrication. This presentation will concentrate on aspects of the IJ process, formulation design, jetting performance, interaction with the substrate and resultant printed device performance.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.239-244
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• 2007

Highly efficient and stable white PIN OLED structures have been developed with a focus on possible AM display applications. Due to the use of the novel air-stable Novaled n-dopant material NDN26, the mass production compatibility of the PIN approach is improved. With both a conventional n-dopant, NDN1, and a novel air-stable n-dopant, NDN26, similar performance in efficiency and lifetime are reached. Based on highly a stable red fluorescent emitter system, the Novaled PIN approach allows for reaching ultra-long lifetimes of 1,000,000 hours at a brightness of $1,000\;cd/m^2$, both for top and for bottom emission layouts. Furthermore, inverted PIN structures for a possible use in a-Si backplane applications for AM displays are shown. With a phosphorescent green emitter system it could be demonstrated that for bottom and inverted as well as non-inverted top emission, a brightness of $1,000\;cd/m^2$ can be reached at below 3 V. In addition to low operating voltages and long lifetimes, PIN OLEDs also enable for device structures with extremely low operating voltage drifts, a feature of increasing importance for future AM display developments.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1213-1215
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• 2007

The OTFT technologies have been mature almost up to the level of commercialization. In this paper we report the OTFT's applications to the backplane for active matrix electrophoretic, active matrix OLED and to integrated circuits. In addition we also introduce the recently developed technologies for reduction of OTFT's operating voltage.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.181-185
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• 2006

The flexible 2-inch AMOLED with $176{\times}144$ pixels has been demonstrated using top emission OLED driven by organic thin film transistors (OTFTs). For the development of AMOLED display on plastic substrate, we have developed several integration and unit process technologies. Through the optimization of the process based on plastic substrate, OTFT backplane with 2 transistors and 1 capacitor in a pixel has been fabricated and integrated with top emission OLED. The active addressing by OTFT driving circuit has been achieved and green light with 15 $cd/m^2$ at 15V has been observed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.171-174
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• 2008

We present results demonstrating that low power consumption phosphorescent AMOLED displays can be fabricated on ultra-thin ($25{\mu}m$) stainless steel substrates, combining an amorphous silicon backplane with a top emission phosphorescent OLED frontplane. We will present preliminary results of flexibility testing on these displays.