• 한국표면공학회지
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• 제45권1호
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• pp.15-19
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• 2012

Tris(8-quinolinolato)aluminum(III); $Alq_3$ has been frequently used as an electron transporting layer in organic light-emitting diodes. Either Ba with a low work function or Au with a high work function was deposited on $Alq_3$ layer in vacuum. And then, the behaviors of electron transition at the $Alq_3$/Ba and $Alq_3$/Au interfaces were investigated by using the near edge x-ray absorption fine structure (NEXAFS) spectroscopy. In the each interface, the energy levels of unoccupied obitals were assigned as ${\pi}^*$(LUMO, LUMO+1, LUMO+2 and LUMO+3) and ${\sigma}^*$. And the relative intensities of these peaks were investigated. In an oxygen atom composing $Alq_3$ molecule, the relative intensities for a transition from K-edge to LUMO+2 were largely increased as Ba coverage (${\Theta}_{Ba}$, 2.7 eV) with a low work function was in-situ sequentially increased on $Alq_3$ layer. In contrast, the relative intensities for the LUMO+2 peak were reduced as Au coverage (${\Theta}_{Au}$, 5.1 eV) with a high work function were increased on $Alq_3$ layer. This means that the electron transition by photon in oxygen atom which consists in the unoccupied orbitals in $Alq_3$ molecule, largely depends on work function of a metal. Meanwhile, in the case of electron transition in a carbon atom, as ${\Theta}_{Ba}$ was increased on $Alq_3$, the relative intensity from K-edge to ${\pi}_1{^*}$ (LUMO and LUMO+1) was slightly decreased, and from K-edge to ${\pi}_2{^*}$ (LUMO+2 and LUMO+3) was somewhat increased. This rising of the energy state from ${\pi}_1{^*}$ to ${\pi}_2{^*}$ exhibits that electrons provided by Ba would contribute to the process of electron transition in the $Alq_3$/Ba interfaces. As shown in above observation, the analyses of NEXAFS spectra in each interface could be important as a basic data to understand the process of electron transition by photon in pure organic materials.

• 한국재료학회지
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• 제26권3호
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• pp.117-122
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• 2016

White organic light-emitting diodes with a structure of indium-tin-oxide [ITO]/N,N-diphenyl-N,N-bis-[4-(phenylm-tolvlamino)-phenyl]-biphenyl-4,4-diamine [DNTPD]/[2,3-f:2, 2-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile [HATCN]/1,1-bis(di-4-poly-aminophenyl) cyclo -hexane [TAPC]/emission layers doped with three color dopants/4,7-diphenyl-1,10-phenanthroline [Bphen]/$Cs_2CO_3$/Al were fabricated and evaluated. In the emission layer [EML], N,N-dicarbazolyl-3,5-benzene [mCP] was used as a single host and bis(2-phenyl quinolinato)-acetylacetonate iridium(III) [Ir(pq)2acac]/fac-tris(2-phenylpyridinato) iridium(III) $[Ir(ppy)_3]$/iridium(III) bis[(4,6-di-fluoropheny)-pyridinato-N,C2] picolinate [FIrpic] were used as red/green/blue dopants, respectively. The fabricated devices were divided into five types (D1, D2, D3, D4, D5) according to the structure of the emission layer. The electroluminescence spectra showed three peak emissions at the wavelengths of blue (472~473 nm), green (495~500 nm), and red (589~595 nm). Among the fabricated devices, the device of D1 doped in a mixed fashion with a single emission layer showed the highest values of luminance and quantum efficiency at the given voltage. However, the emission color of D1 was not pure white but orange, with Commission Internationale de L'Eclairage [CIE] coordinates of (x = 0.41~0.45, y = 0.41) depending on the applied voltages. On the other hand, device D5, with a double emission layer of $mCP:[Ir(pq)_2acac(3%)+Ir(ppy)_3(0.5%)]$/mCP:[FIrpic(10%)], showed a nearly pure white color with CIE coordinates of (x = 0.34~0.35, y = 0.35~0.37) under applied voltage in the range of 6~10 V. The luminance and quantum efficiency of D5 were $17,160cd/m^2$ and 3.8% at 10 V, respectively.

• 마이크로전자및패키징학회지
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• 제25권1호
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• pp.1-10
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• 2018

최근 플렉서블 OLED, 플렉서블 반도체, 플렉서블 태양전지와 같은 유연전자소자의 개발이 각광을 받고 있다. 유연소자에 밀봉 혹은 봉지(encapsulation) 기술이 매우 필요하며, 봉지 기술은 유연소자의 응력을 완화시키거나, 산소나 습기에 노출되는 것을 방지하기 위해 적용된다. 본 연구는 봉지막(encapsulation layer)이 반도체 칩의 내구성에 미치는 영향을 고찰하였다. 특히 다층 구조 패키지의 칩의 파괴성능에 미치는 영향을 칩의 center crack에 대한 파괴해석을 통하여 살펴보았다. 다층구조 패키지는 폭이 넓어 칩 위로만 봉지막이 덮고있는 "wide chip"과 칩의 폭이 좁아 봉지막이 칩과 기판을 모두 감싸고 있는 "narrow chip"의 모델로 구분하였다. Wide chip모델의 경우 작용하는 하중조건에 상관없이 봉지막의 두께가 두꺼울수록, 강성이 커질수록 칩의 파괴성능은 향상된다. 그러나 narrow chip모델에 인장이 작용할 때 봉지막의 두께가 두껍고 강성이 커질수록 파괴성능은 악화되는데 이는 외부하중이 바로 칩에 작용하지 않고 봉지막을 통하여 전달되기에 봉지막이 강하면 강한 외력이 칩내의 균열에 작용하기 때문이다. Narrow chip모델에 굽힘이 작용할 경우는 봉지막의 강성과 두께에 따라 균열에 미치는 영향이 달라지는데 봉지막의 두께가 작을 때는 봉지막이 없을 때보다 파괴성능이 나쁘지만 강성과 두께의 증가하면neutral axis가 점점 상승하여 균열이 있는 칩이 neutral axis에 가까워지게 되므로 균열에 작용하는 하중의 크기가 급격히 줄어들게 되어 파괴성능은 향상된다. 본 연구는 봉지막이 있는 다층 패키지 구조에 다양한 형태의 하중이 작용할 때 패키지의 파괴성능을 향상시키기 위한 봉지막의 설계가이드로 활용될 수 있다.