• 제목/요약/키워드: OFET

검색결과 46건 처리시간 0.033초

F16CuPc를 활성층으로 사용한 FET의 특성 연구 (Properties of FET using Activative Materials with F16CuPc)

  • 이호식;박용필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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    • pp.43-44
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    • 2009
  • We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

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Threshold Voltage Properties of OFET with CuPc Active Material

  • Lee, Ho-Shik;Kim, Seong-Geol
    • Journal of information and communication convergence engineering
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    • 제13권4호
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    • pp.257-263
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    • 2015
  • In this study, organic field-effect transistors (OFETs) using a copper phthalocyanine (CuPc) material as an active layer and SiO2 as a gate insulator were fabricated with varying active layer thicknesses and channel lengths. Further, using a thermal evaporation method in a high-vacuum system, we fabricated a CuPc FET device of the top-contact type and used Au materials for the source and drain electrodes. In order to discuss the channel formation and FET characteristics, we observed the typical current-voltage characteristics and calculated the threshold voltage of the CuPc FET device. We also found that the capacitance reached approximately 97 pF at a negative applied voltage and increased upon the accumulation of carriers at the interface of the metal and the CuPc material. We observed the typical behavior of a FET when used as an n-channel FET. Moreover, we calculated the threshold voltage to be about 15-20 V at VDS = -80 V.

High Molecular Weight Conjugated Polymer Thin Films with Enhanced Molecular Ordering, Obtained via a Dipping Method

  • Park, Yeong Don
    • Bulletin of the Korean Chemical Society
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    • 제34권11호
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    • pp.3340-3344
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    • 2013
  • The fabrication of polymer field-effect transistors with good electrical properties requires the minimization of molecular defects caused by low molecular weight (MW) fractions of a conjugated polymer. Here we report that the electrical properties of a narrow bandgap conjugated polymer could be dramatically improved as a result of dipping a thin film into a poor solvent. The dipping time in hexanes was controlled to efficiently eliminate the low molecular weight fractions and concomitantly improve the molecular ordering of the conjugated polymer. The correlation between the structural order and the electrical properties was used to optimize the dipping time and investigate the effects of the low MW fraction on the electrical properties of the resulting thin film.

F16CuPc를 이용한 FET의 전기적 특성 연구 (Electrical Properties of FET using F16CuPc)

  • 이호식;박용필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.504-505
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    • 2008
  • We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

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Development of Highly Stable Organic Nonvolatile Memory

  • Baeg, Kang-Jun;Kim, Dong-Yu;You, In-Kyu;Noh, Yong-Young
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.904-906
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    • 2009
  • Organic field-effect transistor (OFET) memory is an emerging device for its potential to realize light-weight, low cost flexible charge storage media. Here we report on a solution-processed poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)] (F8T2) nano floating-gate memory (NFGM) with top-gate/bottom-contact device configuration. A reversible shift in the threshold voltage ($V_{Th}$) and the reliable memory characteristics were achieved by incorporation of thin Au nanoparticles (NPs) as charge storage sites for negative electrons at the interface between polystyrene and cross-linked poly(4-vinylphenol).

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Electrical Properties of CuPc FET with Different Substrate Temperature

  • Lee, Ho-Shik;Park, Yong-Pil;Cheon, Min-Woo
    • Transactions on Electrical and Electronic Materials
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    • 제8권4호
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    • pp.170-173
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    • 2007
  • Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated the organic field-effect transistor based a copper phthalocyanine (CuPc) as an active layer on the silicon substrate. The CuPc FET device was made a topcontact type and the substrate temperature was room temperature and $150^{\circ}C$. The CuPc thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in CuPc FET and we calculated the effective mobility with each device. Also, we observed the AFM images with different substrate temperature.

Electrical Properties of a CuPc Field-Effect Transistor Using a UV/Ozone Treated and Untreated Substrate

  • Lee, Ho-Shik;Cheon, Min-Woo;Park, Yong-Pil
    • Transactions on Electrical and Electronic Materials
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    • 제12권1호
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    • pp.40-42
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    • 2011
  • An organic field-effect transistor (OFET) was fabricated using a copper phthalocyanine (CuPc) as the active layer on the silicon substrate. The CuPc FET device was configured as a top-contact type. The substrate temperature was room temperature. The CuPc thickness was 40 nm, and the channel length and channel width were 100 ${\mu}m$ 3 mm, respectively. Typical current-voltage (I-V) characteristics of the CuPc FET were observed and subsequently compared to the UV/ozone treatment on substrate surface.

Probing and Control of Surface Polarization Phenomena in Molecular Films for Organic Electronics

  • Iwamoto, Mitsumasa
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.3-4
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    • 2007
  • Orientational ordering of polar molecules and excess charges at the interface are main origins of surface polarization. For organic electronics, probing and control of these two surface polarization phenomena are key issues. In this presentation, I report a novel electrical measurement that can directly probe orientational dipolar motion in surface monolayers by Maxwell-displacement-current, and also report a novel optical technique that allows carrier motions in organic materials by measuring the optical second harmonic signals activated by the electric field. Then I discuss how the control of dipolar motions and carrier motions are linked to organic electronics applications such as organic field effect transistors.

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CuPc/Au 구조에서의 온도 변화에 따른 계면에서의 표면전위 특성 (Surface Potential Properties of CuPc/Au Interface with Varying Temperature)

  • 이호식;박용필;김영표;유성미;천민우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.492-493
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    • 2007
  • Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine(CuPc) based field-effect transistor with different metal electrode. So we need the effect of the substituent group attached to the phthalocyanine on the surface potential was investigated by Kelvin probe method with varying temperature of the substrate. We were obtained the positive shift of the surface potential for CuPc thin film. We observed the electron displacement at the interface between Au electrode and CuPc layer and we were confirmed by the surface potential measurement.

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금속 전극 변화에 따른 CuPc Field-effect Transistor의 전기적 특성 (Electrical Properties of CuPc Field-effect Transistor with Different Metal Electrodes)

  • 이호식;박용필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.494-495
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    • 2007
  • Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

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