• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.131-136
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• 2000

We have investigated the slurry induced metallic contaminations of undoped and doped silicate oxides surface on CMP cleaning process. The metallic contaminations by CMP slurry were evaluated in four different oxide films, such as plasma enhanced tetra-ethyl-orthyo-silicate glass(PE-TEOS), O3 boro-phos-pho-silicate glass(O3-BPSG), PE-BPSG, and phospho-silicate glass(PSG). All films were polished with KOH-based slurry prior to entering the post-CMP cleaner. The Total X-Ray fluorescence(TXRF) measurements showed that all oxide surfaces are heavily contaminated by potassium and calcium during polishing which is due to a CMP slurry. The polished O3-BPSG films presented higher potassium and calcium contaminations compared to PE-TEOS because of a mobile ions gettering ability of phosphorus. For PSG oxides, the slurry induced mobile ion contamination increased with an increase of phosphorus contents. In addition, the polishing removal rate of PSG oxides had a linear relationship as a function of phosphorus contents.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.171-174
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• 2000

We have investigated the CMP slurry properties of silicate oxide thin films surface on CMP cleaning process. The metallic contaminations by CMP slurry were evaluated in four different oxide films, such as plasma enhanced tetra-ethyl-ortho-silicate glass(PE-TEOS), $O_3$ boro-phospho silicate giass( $O_3$-BPSG), PE-BPSG, and phospho-silicate glass(PSG). All films were polished with KOH-based slurry prior to entering the post-CMP cleaner. The Total X-Ray Fluorescence(TXRF) measurements showed that all oxide surfaces are heavily contaminated by potassium and calcium during polishing, which is due to a CMP slurry. The polished $O_3$-BPSG films presented higher potassium and calcium contaminations compared to PE-TEOS because of a mobile ions gettering ability of phosphorus. For PSG oxides, the slurry induced mobile ion contamination increased with an increase of phosphorus contents.

• 한국세라믹학회지
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• 제28권7호
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• pp.517-524
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• 1991

The CVD process of BPSG (BoroPhosphoSilicate Glass) and its thin film properties were studied. B2H6, PH3, SiH4 and O2 gases were reacted in a AP (Atmospheric Pressure) CVD system in the temperature range of 300℃ and 460℃. The interaction of B2H6 and PH3 was studied from the deposition rate and dopant incorporation change point of view. The dependency of BPSG step coverage on the temperature was changed with different O2/(B2H6+PH3+SiH4) ratio. Finally, the boundary which distinguishes the stable BPSG's from the ones that react with Di (Deionized) water or cleaning chemicals such as H2SO4, HCl, H2O2, NH4OH etc could be defined.