• Korean Journal of Oriental Medicine
• /
• v.17 no.2
• /
• pp.29-37
• /
• 2011

The purpose of this study is to introduce the historical material documents 'Kumgo'("檢考"), 'Haeyeongkumandenglok'("海營檢案謄錄"), 'Wanyeong-kumjedenglok'("完營檢題謄錄冊") which were possessed by C.V. Starr East Asian Library, University Of California Berkeley. These documents are a kinds of the coroner's inquest reports that were made out by the provincial magistrate of the Chos$\u{o}$n dynasty in the nineteenth century. The important contents of these documents consist of the murder cases include the trial records of the persons who connected with the case and the reports of the corpse, etc. Especially, 'Kumgo'("檢考") is the investigator's guide book, the outline of this book is how to investigate the murder's case and how to make out the reports. The 'Haeyeong-kumandenglok'("海營檢案謄錄") is an old book of the transcribe from the many kinds of the murder case's reports which were occurred in Whanghae province("黃海道"), 1882-1884. The book of the 'Wanyeong-kumjedenglok ("完營檢題謄錄冊") is transcribe from the text of the murder's case decisions by the provincial magistrate, in Jeonra province("全羅道"), 1837-1839. The result of this study is as follows ; These documents have the valuable material factors especially in the fields of korean old law, social, woman history. and it seems that these documents will be used in the variety fields of the human scientific researches.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2018.06a
• /
• pp.57-57
• /
• 2018

Zinc-oxide (ZnO), II-VI semiconductor with a wide and direct band gap (Eg: 3.2~3.4 eV), is one of the most potential candidates to substitute for ITO due to its excellent chemical, thermal stability, specific electrical and optoelectronic property. However, the electrical resistivity of un-doped ZnO is not low enough for the practical applications. Therefore, a number of doped ZnO films have been extensively studied for improving the electrical conductivities. In this study, Ti-doped ZnO films were successfully prepared by atomic layer deposition (ALD) techniques. ALD technique was adopted to careful control of Ti doping concentration in ZnO films and to show its feasible application for 3D nanostructured TCO layers. Here, the structural, optical and electrical properties of the Ti-doped ZnO depending on the Ti doping concentration were systematically presented. Also, we presented 3D nanostructured Ti-doped ZnO layer by combining ALD and nanotemplate processes.

• Journal of Chest Surgery
• /
• v.28 no.11
• /
• pp.963-966
• /
• 1995

Ischemia reperfusion injury occurs in various diseases. The role of oxygen free radicals in IR injury of the lung has been spotlighted and many studies have been performed. In this study, we tried to prepare a stable rat lung model for IR injury, focusing on surrounding conditions as hilar stripped left lung, clamped left pulmonary artery and bronchus,and declamped after determined period was passed, and right main pulmonary aretery was clamped. Arterial blood gas analyes were performed at 1, 10, 20, 30, minutes after reperfusion. Before clamping, PaO2 was 95 to 120 mmHg in all animals. There were six groups; Group I : temperature 15o C, and 120 minutes clamping, Group II: 20 oC, and 120 minutes clamping, Group III : 25 oC, and 120 minutes clamping, Group IV : 15oC, 90 minutes clamping, Group V : 20 oC, 90 minutes clamping,Group VI: 20 oC, 75 minutes clamping. Each groups contained 10 Sprague Dayley rats. The humidity was maintained 100 % as circulation imerged isotonic Hartmann`s solution of the pleural cavity. In group IV, V, and VI, PaO2 decreased significantly in all animals immediately after reperfusion, but 43 % survived till 10 minutes after reperfusion, it was 74.0$\pm$5.7, 73.3$\pm$10.8,and 88.2$\pm$17.7 mmHg. Pulmonary edema was observed histologically in 2/10 animals in group IV, 6/10 in group V , 3/10 in group VI, 9/10 in group I, and the other lungs showed all edema. We established a stable model by setting ischemic time,and temperature, between 75 to 90 minutes,15 to 20o C, and isotemperature Hartmann`s solution immersion of the pleural cavity.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2001.10a
• /
• pp.644-647
• /
• 2001

The investigations were discussed on the radiation effects of the electrical properties to the p-type MOS capacitors, which were irradiated by cobalt-60 gamma ray sources. The characteristics of capacitance-bias voltage(C-V) and of dielectric dissipation tarter-bias voltage(D-V) on the capacitors were measured at 1 [MHz] frequency. The microscopic behaviors of spate charges in oxide and silicon-silicon dioxide(Si- $SiO_2$) interface were investigated from the experimental data. The C-V characteristics are statical and convenient for the evaluation of the steady state behavior of carriers and interface states characteristics. While, the distribution and magnitude of space charges in oxide can be found out accurately on the $V_{dp}$ in D-V curves. The density of interface states can be deduced with ease from the magnitude of D-peak at depletion state. Thus, it is also concluded that the D-V curves are more useful and easier than conventional C-V curves for analysis of the microscopic and dynamic behavior of carriers in oxide and Si- $SiO_2$interface.

• Korean Journal of Crystallography
• /
• v.5 no.1
• /
• pp.1-6
• /
• 1994

Two possible space groups of the comfound, VP6N3018C24H:60, are: P 1, a=14.022(1), b=12.644(2), c= 12.640(1)A, a=8038(1), B=102.12(1), r=102.16(1), V=2124.1A3, Z=2, μ=0.47cm-1, d=1.46g/cm3, R=0.083 for 3350 independent reflections with Fo>4o IFI, and C2/c, a=19.32(2), b=16.32(2), c=14.02(1)A, B=105.98(5), β=105.98(5), V=4248.2A3, Z=4 R=0.083 for 1590 independent reflections with Fo>4c IFoI . In the space group P T, there are two monlecules in a unit cell. Vanadium atoms in the two monlecules occupy the two different special positions such that the complete monlecules are accomplished by the two independent center of symmetry. Therefore two different half molecules of bis(trimetaphosphate)vanadate and three molecules of tetraethylammonium are the asymmetric unit in a unit cell. In the space group C2/c, however, the vanadium atom is located at a special position with centrosymmetry, and a two-fold symmetry axis passes through C2/c, N2 and C25 atoms. Therefore the asymmrtic unit in a unit cell consists of a half molecule of bis(trimetaphosphate)vanadate and one and a half molecules of tetraethylammonium. All the molecular conformations in both space groups are very similar: six oxygen atoms coordinated to a vanadium atom in the bi s(trimetaphosphate)vanadate molecule form an octahedron and the four carbon atoms bonded to a nitrogen atom in the tetraethylammonium molecule are disordered so that the eight carbon atoms around nitrogen atom exhibit an irregular dodecahedral form.

• The Korean Society of Law and Medicine
• /
• v.14 no.1
• /
• pp.147-208
• /
• 2013

In der vorliegenden Arbeit geht es um die vergleichende Betrachtung von deutschen Urteilen OLG Munchen, Urt. v. 21. 4. 2011 - Az. 1 U 2363/10; BGH, Urt. v. 22. 5. 2012 - VI ZR 157/11) und einer Reihe von koreanischen Urteilen im Bereich des Arzthaftungsrechts. Sie behandelt die Kausalitat von Tatbestand und Rechtswidrigkeitszusammenhang in der normativen Haftungszurechung. In Korea gilt die sog. Adaquanztheorie noch entscheidend als bewertendes Zurechnungskriterium - sogar manchmal als umgangssprachliches Homonym im Sinne der Verh$\ddot{a}$ltnism$\ddot{a}{\ss}$igkeit angewendet -, die dogmengeschichtlich von Deutschland $\ddot{o}$bernommen wurde. Doch wie aus den deutschen Urteilen ersichtlich, ist sie dort schon $\ddot{u}$berwunden. Die Ergebnisse der betrffenden koreanischen Urteile sind zwar nicht unbillig, deren Urteilsbegrundungen aber theoretisch bzw. praktisch nicht $\ddot{u}$berzeugend. Nach allgemeiner Ansicht kommt es vielmehr auf den Schutzzweck an, der auch bei der Anwendung des ${\S}$ 393 KBGB gelten kann. Schlie${\ss}$lich wurde die $\ddot{U}$bertragung des praxisgerechten L$\ddot{o}$sungsansatzes in deutschen Urteilen auf rechtsvergleichende Weise dazu beitragen, die Zivilrechtspraxis in der koreanischen Justiz nachvollziehbarer machen.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.190-193
• /
• 2006

we implemented pentacene TFTs able to operate at low voltage less than 2V by using ultrathin Al2O3 layer as a gate insulator. The OTFTs exhibited a mobility of $0.27{\pm}0.05\;cm^2/Vs$, an outstanding subthreshold slope of $0.109{\pm}0.027$, and an on/off current ratio of $2.87{\pm}1.07{\times}10^4$. OTFT operated at low voltage, producing 3.5uA at $V_GS$= 2V and $V_DS$= 1.5V.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.354-355
• /
• 2013

최근 디스플레이 분야에서 amorphous InGaZnO (a-IGZO) thin film transistors (TFTs)는 a-Si:H에 비해 비정질 상태에서도 비교적 높은 이동도를 가지고 다결정 Si 반도체에 비해 저온공정이 가능하고 대면적화가 용이한 장점 때문에 주목받고 있다. 또한 넓은 밴드갭을 가지기 때문에 가시광선 영역에서 투명하여 투명소자에도 응용이 가능하다. 본 연구에서는 RF magnetron sputtering법을 이용하여 RF power의 변화에 따라 IGZO 박막의 positive bias stress (PBS)에 대한 안정성을 조사하였다. 소결된 타겟으로는 In:Ga:ZnO를 각각 2:2:1 mol%의 조성비로 소결하여 이용하였고, 공정 조건은 초기 압력 Torr, 증착 압력 Torr, Ar：O2=18：12 sccm로 고정하였다. 공정 변수로는 130 W, 150 W, 170 W, 200 W로 변화를 주어 실험을 진행하였다. PBS 측정은 gate bias를 10 V로 고정하여 stress 시간을 각각 0, 30, 100, 300, 1,000, 3,000, 7,000초를 적용하였다. 측정 결과 RF power가 증가할수록 문턱전압의 변화량이 증가하는 것을 보였다. 130 W의 경우 4.47 V의 변화량을 보였지만 200 W의 경우는 10.01 V로 증가되어 나타났다. 따라서 RF power을 낮추어 만들어진 소자의 경우 RF power를 높여 만들어진 소자에 비해 PBS에 대한 안정성이 더 높은 결과를 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.169.1-169.1
• /
• 2015

최근 디스플레이 기술은 급속도로 발전해 가고 있다. 디스플레이 산업의 눈부신 성장에 발맞추어 초고화질, 초고선명, 고속 구동 및 대형화 등을 포함하는 최신 기술의 디스플레이 구동이 필요하다. 이러한 요구사항을 만족하기 위해서는 각 픽셀에 영상정보를 기입하는 충전시간을 급격히 감소시켜야 하고 따라서 픽셀 트랜지스터(TFT)의 이동도는 급격히 증가해야 한다. 따라서 차세대 디스플레이 실현을 위해서 고이동도 특성을 구현 할 수 있는 신물질의 개발이 매우 중요하다. 현재 산화물박막트랜지스터는 차세대 디스플레이 실현을 위해 가장 주목받고 있으며, 실제로 산화물박막 트랜지스터의 핵심소재인 In-Ga-Zn-O(a-IGZO) 산화물의 경우 국내외에서 디스플레이에 적용되어 생산이 시작되고있다. 그러나 a-IGZO 산화물의 경우 이동도가 $5-10cm^2V{\cdot}s$ 수준이어서 향후 개발 되어질 초고해상도/고속구동 디스플레이 실현(이동도 $50cm^2V{\cdot}s$)에는 한계가 있다. 따라서 본 연구에서는 이를 해결 할 수 있는 'post-IGZO' 개발을 위해 In2O3에 Ga2O3를 조성별로 고용시켜 박막의 구조적, 전기적, 광학적 특성 및 TFT를 제작하여 특성 연구를 진행하였다. 조성은 In2O3에 Ga2O3를 7.5%~15% 도핑 하였으며, Sputtering을 이용하여 indium gallium oxide(IGO) 박막을 제작하였다. 박막은 상온 및 $300^{\circ}C$에서 증착 하였으며 증착 된 IGO 박막은 Ga=12.5% 까지는 In2O3에 Ga이 모두 고용되어 cubic In2O3 poly crystalline을 나타내는 것을 확인하였으며 Ga=15%에서 Gallium 관련 2차상이 확인되었다. Ga양이 변화함에 따라 박막의 전기적 특성이 조절 가능하였으며 이를 이용하여 IGO 박막을 30 nm 두께로 증착 하여 IGO 박막을 channel layer로 사용하는 bottom gate structured TFTs를 제작 하였다. IGO TFTs는 Ga=10%에서 on/off ratio ${\sim}10^8$, 그리고 field-effect mobility $84.8cm^2/V{\cdot}S$를 나타내며 초고화질, 초고선명 차세대 디스플레이 적용 가능성을 보여 준다.

• Korean Journal of Materials Research
• /
• v.4 no.6
• /
• pp.715-722
• /
• 1994

Thermochromic $Vo_{2}$ thin films for "smart windows" were prepared by electron beam evaporationmethod on a glass substrate and spectral transmittances were examined by spectrophotometer. Substratetemperature of $300^{\circ}C$ and annealing temperature of $400^{\circ}C$ were found to be effective to give athermochromism on $Vo_{2}$ thin film due to the crystallization of the thin film. Furthermore, annealing of$Vo_{2}$ thin film affected the spectral transmittance and reduced the transmittance significantly at wavelengthbelow 500nm.$V_{0.95}W_{0.05}O_{2}$ thin film doped by 5 atomic percent of W showed semiconductor-metal transition around 0$0^{\circ}V_{0.995}W_{0.005}O_{2}$thin film which contains 0.5 atomic percent Sn showed therrnochrornisrn when it was depositedat substrate temperature of $300^{\circ}C$ and annealed at $450^{\circ}C$ for 5 hours in argon gas. The transitiontemperature of the $V_{0.995}W_{0.005}O_{2}$ thin film was found to be about $25^{\circ}C$ and showed some hysterisis. and showed some hysterisis.