• Title/Summary/Keyword: O:N ratio

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Microstructure Control of Porous In-situ Synthesized $Si_2N_2O-Si_3N_4$ Ceramics

  • Paul, Rajat Kanti;Lee, Chi-Woo;Kim, Hai-Doo;Lee, Byong-Taek
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09a
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    • pp.325-326
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    • 2006
  • Using $6wt%Y_2O_3-2wt%Al_2O_3$ as sintering additives and Si as a raw powder, the continuously porous in-situ $Si_2N_2O-Si_3N_4$ bodies were fabricated by multi-pass extrusion process and their microstructures were investigated depending on the addition of carbon (0-9wt%) in the mixture powder. The introduction of $Si_2N_2O$ fibers observed in the unidirectional continuous pores as well as in the pore-frame regions of the nitrided bodies can be an effective method in increasing the filtration efficiency. In the case of no carbon addition, the network type $Si_2N_2O$ fibers with high aspect ratio appeared in the continuous pores with diameters of 150-200 nm. However, in the case of 9wt% C addition, the fibers were found without any network type and had diameters of 200-250 nm.

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Adhesion and Diffusion Barrier Properties of $TaN_x$ Films between Cu and $SiO_2$ (Cu 박막과 $SiO_2$ 절연막사이의 $TaN_x$ 박막의 접착 및 확산방지 특성)

  • Kim, Yong-Chul;Lee, Do-Seon;Lee, Won-Jong
    • Journal of the Microelectronics and Packaging Society
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    • v.16 no.3
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    • pp.19-24
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    • 2009
  • Formation of an adhesion/barrier layer and a seed layer by sputtering techniques followed by electroplating has been one of the most widely used methods for the filling of through-Si via (TSV) with high aspect ratio for 3-D packaging. In this research, the adhesion and diffusion-barrier properties of the $TaN_x$ film deposited by reactive sputtering were investigated. The adhesion strength between Cu film and $SiO_2$/Si substrate was quantitatively measured by $180^{\circ}$ peel test and topple test as a function of the composition of the adhesive $TaN_x$ film. As the nitrogen content increased in the adhesive $TaN_x$ film, the adhesion strength between Cu and $SiO_2$/Si substrate increased, which was attributed to the increased formation of interfacial compound layer with the nitrogen flow rate. We also examined the diffusion-barrier properties of the $TaN_x$ films against Cu diffusion and found that it was improved with increasing nitrogen content in the $TaN_x$ film up to N/Ta ratio of 1.4.

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The Influence of $CH_{3}Cl$ on $CH_{4}/CH_{3}Cl/O_{2}/N_{2}$ Premixed Flames under the Oxygen Enrichment (산소부화 조건인 $CH_{4}/CH_{3}Cl/O_{2}/N_{2}$ 예혼합 화염에서 $CH_{3}Cl$의 영향)

  • Shin, Sung-Su;Lee, Ki-Yong
    • Proceedings of the KSME Conference
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    • 2004.11a
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    • pp.1128-1133
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    • 2004
  • A comprehensive experimental and numerical study has been conducted to understand the influence of $CH_{3}Cl$ addition on $CH_{4}/O_{2}/N_{2}$ premixed flames under the oxygen enrichment. The laminar flame speeds of $CH_{4}/CH_{3}Cl/O_{2}/N_{2}$ premixed flames at room temperature and atmospheric pressure are experimentally measured using Bunsen nozzle flame technique, varying the amount of $CH_{3}Cl$ in the fuel, the equivalence ratio of the unburned mixture, and the level of the oxygen enrichment. The flame speeds predicted by a detailed chemical kinetic mechanism employed are found to be in excellent agreement with those deduced from experiments. As $CH_{3}Cl$ addition is increased temperature at the postflame is not almost varied but the heat release rate and $EI_{NO}$ are decreased. The function of $CH_{3}Cl$ as inhibitor on hydrocarbon flames becomes weakened as the level of the oxygen enrichment is increased from 0.21 to 0.5.

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The Shape of Polymers Resulted Condensation in the Mixed Si(OC_2H_5)_4 and Zr(O-nC_3H_7)_4$4 Solutions (Si(OC_2H_5)_4와 Zr(O-nC_3H_7)_4$ 혼합용액의 중합반응에 따른 고분자의 형상)

  • 신대용;한상목
    • Journal of the Korean Ceramic Society
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    • v.31 no.2
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    • pp.220-226
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    • 1994
  • The hydrolysis and condensation reactions in the mixed alkoxide solutions of Si(OC2H5)4 and Zr(O-nC3H7)4 with various water contents (1, 2, 4, and 8 in molar ratio to alkoxide, r) and catalysts were examined by rheological measurements and the number average molecular weight in order to explain the shape of the polymer in the mixed alkoxide solutions. It was found that fibers could be drawn in the viscosity range of 1∼100P from the acid-catalyzed solutions with lower water contents of the mole ratio H2O/alkoxide, r 2. On the other hand, crack free bulk gel was formed from the acid-catalyzed solutions including a large amount of water (r 4), and the base-catalyzed solutions. The relation between the intrinsic viscosity [{{{{ eta }}] and the number average molecular weight n, namely [{{{{ eta }}]=Knα, has shown that the acid-catalyzed spinnable solutions (r=1 and 2) have linear polymers and the exponent α's are about 0.56 and 0.81, whereas non-spinnable solutions (r=4 and 8) have three dimensional network polymers or spherical particles and the exponent α's are 0.41∼0.51 and 0.35.

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Transparency of AlON Fabricated by Pressureless Reaction Sintering Using Various Sintering Aids (소결조제를 달리해 상압 반응소결로 제조된 AlON의 투명도)

  • Koo, Bon-Kyung;Koo, Kyeo-Hun;Kim, Ji-Hye;Jung, In-Chul;Lee, Jae-Hyung
    • Journal of the Korean Ceramic Society
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    • v.46 no.4
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    • pp.392-396
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    • 2009
  • AlON was fabricated by the pressureless reaction sintering of $Al_2O_3$-AlN powder mixtures. The ratio of AlN to $Al_2O_3$ as well as various sintering aids were the main variables for this study. The optimum ratio of AlN in the $Al_2O_3$-AlN mixture was approximately 35.0 mol%. For the sintering aids, only when a small amount of MgO was added together with $Y_2O_3$ and BN, AlON specimens could be sintered to a full density with negligible pores and high transparency. Other combinations of $Y_2O_3$, BN, CaO and MgO resulted in enough pores in the sintered specimens to have in-line transmittance only between 0% and 30%. The in-line transmittance reached over 80% after sintering at $1975^{\circ}C$ for 10 h for the specimen containing 0.15 wt% MgO, 0.08 wt% $Y_2O_3$ and 0.02 wt% BN.

SiON/SiO2 Multilayer Deposited by PECVD for Low-Loss Waveguides (저손실 광도파로 제작을 위해 PECVD 법에 의해 증착된 SiON/SiO2 다층박막)

  • 김용탁;김동신;윤대호
    • Journal of the Korean Ceramic Society
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    • v.41 no.3
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    • pp.197-201
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    • 2004
  • SiO$_2$ and SiON thick films were deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique on silicon wafer (100) using SiH$_4$ and $N_2$O as precursor gases. In this work, the influence of rf power, and rf bias power on the optical and physical properties of SiO$_2$ and SiON thick films is presented. The refractive index decreases with increasing rf power, and rf bias power. The refractive index of the films varied from 1.4493 to 1.4952 at wavelength at 1552 nm, with increasing rf power, the nitrogen content decreases while the oxygen content increases, in a manner that the O/N ratio increases approximately linearly.

Concentration of Particulate Nitrate Classified by Formation Mechanism in Seoul Ambient Air (생성메카니즘에 따른 부유분진 등 입자상 nitrate 농도)

  • 천만영;김희강
    • Journal of Korean Society for Atmospheric Environment
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    • v.11 no.1
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    • pp.37-44
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    • 1995
  • Concentration of particulate nitrate classified by formation mechanism and particle diameter in ambient air was determined from Feb. to Oct. 1993. Sampling was carried out using a two-stage Andersen air sampler at the top of a five-story building located at Kon-Kuk University in seoul. Concentration of N $H_{4}$N $O_{3}$ in TSP was measured by pyrolysis of sample filters at 160.deg.C for 1hr. concentration of N $H_{4}$N $O_{3}$ was higher in winter time compared with that in summmer time. Also, concentration of N $H_{4}$N $O_{3}$ was higher in fine particles compared with that in coarse particle. The range of N $H_{4}$N $O_{3}$ concentration was between 2.9 and 9.9.mu.g/ $m^{3}$. Weight fraction of N $H_{4}$N $O_{3}$ in total particulate nitrate was 31.1 .sim. 59.5%, and weight fraction of N $H_{4}$N $O_{3}$ in TSP was 2.1 .sim. 11.2%. Concentration of NaN $O_{3}$, which originated from sea salt, was highest in spring time and lowest in summer time,and the concentration range was between 0.1 and 0.7.mu.g/ $m^{3}$. NaN $O_{3}$/TSP ratio was very low (0.1 .sim. 0.4%) indicating that the portion of NaN $O_{3}$in TSP was negligible. Concentration of particulate nitrate originated from soil was 2.4 .sim. 2.9.mu.g/ $m^{3}$. Weight fraction of that in total particulate nitrate was 14.0 .sim. 37.1%.

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Thermal Phenomena of an N2O Catalyst Bed for Hybrid Rockets Using a Porous Medium Approach (다공성 매질 접근법을 적용한 하이브리드 로켓 N2O 촉매 점화기의 열적 현상)

  • 유우준;김수종;김진곤;장석필
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.34 no.9
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    • pp.89-96
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    • 2006
  • In this study, fluid flow and thermal characteristics in a catalyst bed for nitrous oxide catalytic decomposition which is introduced as a hybrid rocket ignition system for small satellites were theoretically considered. To analyze the thermal phenomena of the catalyst bed, a so-called porous medium approach has been opted for modeling the honeycomb geometry of the catalyst bed. Using a Brinkman-extended Darcy model for fluid flow and the one-equation model for heat transfer, the analytical solutions for both velocity and temperature distributions in the catalyst bed are obtained and compared with experimental data to validate the porous medium approach. Based on the analytical solutions, parameters of engineering importance are identified to be the porosity of the catalyst bed, effective volumetric ratio, the ratio of the radius of the catalyst bed to the radius of a pore, heat flux generated by a heater, and pumping power. Their effects on thermal phenomena of the catalyst bed are studied.

Control of electrical types in the P-doped ZnO thin film by Ar/$O_2$ gas flow ratio

  • Kim, Young-Yi;Han, Won-Suk;Kong, Bo-Hyun;Cho, Hyung-Koun;Kim, Jun-Ho;Lee, Ho-Seoung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.11-11
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    • 2008
  • ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

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Synthesis of Graphene Oxide Based CuOx Nanocomposites and Application for C-N Cross Coupling Reaction

  • Choi, Jong Hoon;Park, Joon B.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.176.1-176.1
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    • 2014
  • Graphene has attracted an increasing attention due to its extraordinary electronic, mechanical, and thermal properties. Especially, the two dimensional (2D) sheet of graphene with an extremely high surface to volume ratio has a great potential in the preparation of multifunctional nanomaterials, as 2D supports to host metal nanoparticles (NPs). Copper oxide is widely used in various areas as antifouling paint, p-type semiconductor, dry cell batteries, and catalysts. Although the copper oxide(II) has been well known for efficient catalyst in C-N cross-coupling reaction, copper oxide(I) has not been highlighted. In this research, CuO and Cu2O nanoparticles (NPs) dispersed on the surface of grapehene oxide (GO) have been synthesized by impregnation method and their morphological and electronic structures have been systemically investigated using TEM, XRD, and XAFS. We demonstrate that both CuO and Cu2O on graphene presents efficient catalytic performance toward C-N cross coupling reaction. The detailed structural difference between CuO and Cu2O NPs and their effect on catalytic performance are discussed.

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