• 한국세라믹학회지
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• 제34권6호
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• pp.553-560
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• 1997

A fine $\alpha$-Al2O3 powder was prepared by sol-gel process for membrane application. And it was carried out by adding 1.5wt% $\alpha$-Al2O3 powders(mean size : 87 nm) as seeds to the prepared sols and by controlling the heating schedule (the heating rate and the soaking time) to prevent the microstructural change, which occured during $\theta$-to $\alpha$Al2O3 phase transformation. The seeded $\alpha$-Al2O3 particles acted as the heterogeneous nucleation sites for the $\alpha$-Al2O3 nucleation during the transformation of $\theta$- to $\alpha$-Al2O3 and resulted in increasing the driving force of phase transformation to activate the formation of $\alpha$-Al2O3 phase at 82$0^{\circ}C$. By $\alpha$-Al2O3 seeding and controlling of heating condition the phase transformation of $\theta$- to $\alpha$-Al2O3 was accomplished at low temperature and the grain growth process was depressed. Therefore, the unsupported membrane could be fabricated in $\alpha$-Al2O3 . The average diameter of pores in the fabricated membrane was 7 nm and the porosity was 47%.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1993년도 추계 학술발표 강연 및 논문 개요집
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• pp.87-88
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• 1993

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제16회 학술발표회 논문개요집
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• pp.92-92
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• 1999

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1999년도 춘계학술발표회 초록집
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• pp.95-96
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• 1999

• 한국전기전자재료학회논문지
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• 제11권1호
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• pp.12-17
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• 1998

The heteroepitaxial growth of InP and GaInAs on GaAs substrates has been studied by using a new combination of source materials: ethyldimethylindium (EDMIn) and trimethylgallium (TMGa) as group III sources, and tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V sources. Device quality InP heteroepitaxial layers were obtained by using a two-step growth process under atmospheric pressure, involving a growth of an initial nucleation layer at low temperature followed by high temperature annealing and the deposition of epitaxial layer at a growth temperature. The continuity and thickness of nucleation layer were important parameters. The InP layers deposited at 500$^{\circ}$- 55$0^{\circ}C$ are all n-type, and the electron concentration decreases with decreasing TBP/EDMIn molar ratio. The excellent optical quality was revealed by the 4.4 K photoluminescence (PL) measurement with the full width at half maximum (FWHM) of 4.94 meV. Epitaxial Ga\ulcorner\ulcorner\ulcornerIn\ulcorner\ulcorner\ulcornerAs layers have been deposited on GaAs substrates at 500$^{\circ}$ - 55$0^{\circ}C$ by using InP buffer layers. The composition of GaInAs was determined by optical absorption measurements.

• 한국재료학회지
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• 제11권7호
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• pp.615-621
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• 2001

본 연구에서는 고변형된 이중 에피층에서 두 가지 종류의 반원 전위 루프 ($60^{\circ}$및 쌍격자 전위)의 생성 속도물 예측하는 모델을 제안한다. 모델링 시, 에피층 표면에서 발생하는 결함과 이곳에 집중되는 응력 효과를 고려하였으며, Matthew의 식을 발전시켜 에피층 두께에 따른 잔류 변형율을 변수로 사용하였다. 모델링을 통한 계산 결과에 의하면, 응력 집중 현상은 고변형된 이종에피층에서 전위 및 결정 결함 현상을 설명하는 데 매우 중요하였다. 또한,본 연구를 퉁하여, 응력 집중 현상이 에피층 성장 초기에 생성되는 전위 형태를 결정하는 주요한 인자 중 하나임을 단면 투과 전자 현미경 결과와의 비교를 통해 확인할 수 있었다.

• 한국재료학회지
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• 제33권4호
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• pp.135-141
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• 2023

The volatilization of alkali ions in (K,Na)NbO₃ (KNN) ceramics was inhibited by doping them with alkaline earth metal ions. In addition, the grain growth behavior changed significantly as the sintering duration (t_s) increased. At 1,100 ℃, the volatilization of alkali ions in KNN ceramics was more suppressed when doped with alkaline earth metal ions with smaller ionic size. A Ca²⁺-doped KNN specimen with the least alkali ion volatilization exhibited a microstructure in which grain growth was completely suppressed, even under long-term sintering for t_s = 30 h. The grain growth in Sr²⁺-doped and Ba²⁺-doped KNN specimens was suppressed until t_s = 10 h. However, at t_s = 30 h, a heterogeneous microstructure with abnormal grains and small-sized matrix grains was observed. The size and number of abnormal grains and size distribution of matrix grains were considerably different between the Sr²⁺-doped and Ba²⁺-doped specimens. This microstructural diversity in KNN ceramics could be explained in terms of the crystal growth driving force required for two-dimensional nucleation, which was directly related to the number of vacancies in the material.

• 열처리공학회지
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• 제6권2호
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• pp.98-106
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• 1993

Ultra high carbon steel (Fe-1.4%C) was prepared by means of a high frequency induction furnace. The preferred nucleation site of martensite was observed. The changes of hardness and impact thoughness due to tempering temperatures, and the spheroidization of cementite by controlled -rolling were also studied for the steel. The preferred nucleation site of martensite in the ultra high carbon steel is prior austenite grain boundary. The hardness of the steel is slightly increased up to about $300^{\circ}C$, and then decreased with further tempering temperature. However, the impact energy keeps a almost constant value, independent of the tempering temperature. The spheroidization of cementite is accelerated as the reduction in thickness per rolling pass is increased and the number of the rolling passes becomes greater.

• 공업화학
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• 제17권5호
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• pp.504-508
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• 2006

사슬성장의 핵심생성자리인 dimer (p-aminodiphenylamine)의 비율을 조절하여 아닐린 중합반응 과정에 첨가함으로서 oligomer에서 저분자량(Mw~40000)까지의 폴리아닐린 분자량이 조절되었다. 상대점도분자량 및 GPS 측정을 통하여 합성된 폴리아닐린의 분자량을 확인하였으며, UV, FT-IR, 전기전도도 등을 측정하여 분자량에 따른 폴리아닐린의 물리적, 화학적 성질을 조사하였다.

• 반도체디스플레이기술학회지
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• 제3권3호
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• pp.45-50
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• 2004

Highly oriented diamond (HOD) films in polycrystalline can be grown on the (100) silicon substrate by microwave plasma CVD. Bias enhanced nucleation (BEN) method was adopted for highly oriented diamond deposition with high nucleation density and uniformity. The substrate was biased up to -250[Vdc] and bias time required for forming a diamond film was varied up to 25 minutes. Diamond was deposited by using $\textrm{CH}_4$/CO and $H_2$ mixture gases by microwave plasma CVD. Nucleation density and degree of orientation of the diamond films were studied by SEM. Thermal conductivity of the diamond films was ∼5.27[W/cm.K] measured by $3\omega$ method.