• Title/Summary/Keyword: Nucleation and growth

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Numerical Simulation of Bubble Motion During Nucleate Boiling (핵비등에서의 기포거동에 관한 수치해석)

    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.25 no.3
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    • pp.389-396
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    • 2001
  • Direct numerical simulation of bubble growth and merger process on a single nucleation site during partial nucleate boiling is performed. The equations governing conservation of mass, momentum and energy are solved using a finite difference method combined with a level set method for capturing the vapor-liquid interface. The level set method is modified to include the effects of phase change at the interface and contact angle at the wall. Also, a simplified formulation for predicting the evaporative heat flux in a thin liquid micro-layer is developed and incorporated into the level set formulation. Based on the numerical results, the bubble growth and merger pattern and its effect on the heat transfer are discussed.

Particle Behavior of Silver Nanoparticles Synthesized by Electrical Resistance Analysis (전기저항 분석을 통한 은나노 입자 합성 시의 입자거동 연구)

  • Yoon, Young Woo;Ryu, Si Hong;Yang, Sung Joo;Lee, Seong Eui
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.8
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    • pp.531-538
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    • 2015
  • This study examined the size and shape of the nano-silver particle through the analysis of electrical resistance when synthesizing nano-sized silver by using the chemical liquid reduction. Changes in particle behaviors formed according to the changes in electronic characteristics by electric resistance in each time period in the beginning of reduction reaction in a course of synthesizing the nano-silver particle formation were studied. In addition, analysis was conducted on particle behaviors according to the changes in concentration of $AgNO_3$ and in temperature at the time of reduction and nucleation and growth course when synthesizing the particles based on the particle behaviors were also examined. As the concentration of $AgNO_3$ increased, the same amount of resistance of approximately $5{\Omega}$ was increased in terms of initial electronic resistance. Furthermore, according to the result of formation of nuclear growth graph and estimation of slope based on estimated resistance, slops of $6.25{\times}10^{-3}$, $2.89{\times}10^{-3}$, and $1.85{\times}10^{-3}$ were derived from the concentrations of 0.01 M, 0.05 M, and 0.1 M, respectively. As the concentration of $AgNO_3$ increased, the more it was dominantly influenced by the nuclear growth areas in the initial phase of reduction leading to increase the size and cohesion of particles. At the time of reduction of nano-silver particle, the increases of initial resistance were $4{\Omega}$, $4.2{\Omega}$, $5{\Omega}$, and $5.3{\Omega}$, respectively as the temperature increased. As the temperature was increased into $23^{\circ}C$, $40^{\circ}C$, $60^{\circ}C$, and $80^{\circ}C$, slopes were formed as $4.54{\times}10^{-3}$, $4.65{\times}10^{-3}$, $5.13{\times}10^{-3}$, and $5.42{\times}10^{-3}$ respectively. As the temperature increased, the particles became minute due to the increase of nuclear growth area in the particle in initial period of reduction.

Initial Stage of Film Formation and Material Properties of Cu Film deposited by MOCVD (MOCVD로 증착된 구리 필름의 초기성장 및 증착조건에 따른 박막특성)

  • 황의성;이영록;이지화
    • Journal of the Korean Vacuum Society
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    • v.4 no.S1
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    • pp.113-117
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    • 1995
  • MOCVD of Cu films were carried out on gold-TiN(1000$\AA$)/Ti/Si wafers from hexafluoroacetylacetonate-Cu(l) vinyltrimethylsilane, Cu(l)(hafac)(vtms), in a small cold-wall type reactor. Effects of the substrate and bubbler temperatures on the film growth rate were studied, and a film with $\rho$=1.8$\pm$0.1$\mu$$\Omega$.cm could be deposited 150nm/min at Ts=200 and Tb=$30^{\circ}C$, respectively. The initial stage of the film formation was also investigated by in-situ laser reflectivity monitoring combined with SEM observations, based on which variations in the film properties depending on the growth conditions were discussed in terms of the nucleation rate and grain size.

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Reduction of Soot Emitted from a $C_2$$H_4$ Normal Diffusion Flame with Application of DC Corona Discharge (DC 코로나 방전이 적용된 에틸렌 정상 확산 화염의 Soot 배출 저감)

  • Lee, Jae-Bok;Hwang, Jeong-Ho
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.25 no.4
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    • pp.496-506
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    • 2001
  • The effect of corona discharge on soot emission was experimentally investigated. Size and number concentrations of soot aggregates were measured and compared for various voltages. Regardless of the polarity of the applied voltage, the flame length decreased and the tip of flame spreaded with increasing voltage. For the experimental conditions selected, the flame was blown off toward the ground electrode by corona ionic wind. When the negative applied voltage was greater than 3kV(for electrode spacing = 3.5cm), soot particles in inception or growth region were affected by the corona discharge, resulting in the reduction of number concentration. The results show that the ionic wind favored soot oxidation and increased flame temperature. Number concentration and primary particle size greatly increased, when the corona electrodes were located the region of soot nucleation or growth(close to burner mouth).

The Mechanism of Gold Deposition by Thermal Evaporation

  • Mark C. Barnes;Kim, Doh-Y.;Nong M. Hwang
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 2000.06a
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    • pp.127-142
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    • 2000
  • The charged cluster model states that chemical vapor deposition (CVD) begins with gas phase nucleation of charged clusters followed by cluster deposition on a substrate surface to form a thin film. A two-chambered CVD system, separated by a 1-mm orifice, was used to study gold deposition by thermal evaporation in order to determine if the CCM applies in this case. At a filament temperature of 1523 and 1773 K, the presence of nano-meter sized gold clusters was found to be positive and the cluster size and size distribution increased with increasing temperature. Small clusters were found to be amorphous and they combined with clusters already deposited on a substrate surface to form larger amorphous clusters on the surface. This work revealed that gold thin films deposited on a mica surface are the result of the sticking of 4-10 nm clusters. The topography of these films was similar to those reported previously under similar conditions.

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AEM on Growth Mechanism of Synthesized Graphene on Ni Catalyst

  • Park, Min-Ho;Lee, Jae-Uk;Bae, Ji-Hwan;Song, Gwan-U;Kim, Tae-Hun;Yang, Cheol-Ung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.579-579
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    • 2012
  • Graphene has recently been a subject of much interest as a potential platform for future nanodevices such as flexible thin-film transistors, touch panels, and solar cells. And chemical vapor deposition (CVD) and related surface segregation techniques are a potentially scalable approach to synthesizing graphite films on a variety of metal substrates. The structural properties of such films have been studied by a number of methods, including Raman scattering, x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and transmission electron microscopy (TEM). An understanding of the structural quality and thickness of the graphite films is of paramount importance both in improving growth procedures and understanding the resulting films' electronic properties. In this study, we synthesized the few-layered grapheneunder optimized condition to figure out the growth mechanism seen in CVD-grown graphenee by using various electron microscope. Especially, we observed directly film thickness, quality, nucleation site, and uniformity of grpahene by using AEM. The details will be discussed in my presentation.

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Crystal Growing of NaX type Zeolite

  • Ha, Jong-Pil;Seo, Dong-Nam;Kim, Seong-Yong;Jung, Mi-Jeong;Moon, In-Ho;Cho, Sang-Joon;Park, Hyun-Min;Kim, Ik-Jin
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1999.06a
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    • pp.351-360
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    • 1999
  • A large NaX type zeolite crystal of a uniform particle size of 20${\mu}{\textrm}{m}$ are grown with various H2O content by hydrothermal reaction and added seed crystal (2~3 ${\mu}{\textrm}{m}$) to reactant solution as a function of different adding seed levels from 3 to 15 %. The result that increased purity of NaX zeolite above 95% and homogeneity of crystal size by increasing adding seed levels, also decreased crystallization time. It was explained that adding seed to synthesis solution leaded out increase of surface area of physical contact reaction and directed growth of seed crystal, so more rapid consumption of reaction gel as increase seeding levels.

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Time Evolution of a High-temperature GaN Epilayer Grown on a Low-temperature GaN Buffer Layer using a Low-pressure MOCVD

  • Chang, Kyung-Hwa;Cho, Sung-Il;Kwon, Myoung-Seok
    • Transactions on Electrical and Electronic Materials
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    • v.7 no.1
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    • pp.36-41
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    • 2006
  • In this paper, the time evolution of undoped GaN epilayers on a low-temperature GaN buffer layer grown on c-plane sapphire at a low pressure of 300 Torr was studied via a two-step growth condition in a horizontal MOCVD reactor. As a function of the growth time at a high-temperature, the surface morphology, structural quality, and optical and electrical properties were investigated using atomic force microscopy, high-resolution x-ray diffraction, photoluminescence, and Hall effect measurement, respectively. The root-mean-square roughness showed a drastic decrease after a certain period of surface roughening probably due to the initial island growth. The surface morphology also showed the island coalescence and the subsequent suppression of three-dimensional island nucleation. The structural quality of the GaN epilayer was improved with increasing growth time considering the symmetrical (002) and asymmetrical (102) rocking curves. The variations of room-temperature photoluminescence, background carrier concentration, and Hall mobility were measured and discussed.

A Study on the Preparation of a Linear Low Density Polyethylene particles by Thermally Induced Phase Separation (열유도 상분리에 의한 선형 저밀도 폴리에틸렌 입자 제조에 관한 연구)

  • Park, Keun-Ho;Jang, Young-Min
    • Journal of the Korean Applied Science and Technology
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    • v.28 no.4
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    • pp.386-392
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    • 2011
  • We are crystallized to the linear low density polyethylene(LLDPE) particles by a thermally induced phase separation(TIPS). TIPS process based on the phase separation mechanism was performed for the LLDPE system which undergoes liquid-solid phase separation. The linear low density polyethylene particle formation occurred by the nucleation and growth mechanism in the metastable region. Although the growth rates depended on the experimental conditions such as the polymer concentration and temperature, the particles were larger when the polymer concentration was higher or temperature was higher. The particles were observed by SEM. The LLDPE particle size distribution became broader when the polymer concentration was higher.

Size and Density of Graphene Domains Grown with Different Annealing Times

  • Jung, Da Hee;Kang, Cheong;Nam, Ji Eun;Kim, Jin-Seok;Lee, Jin Seok
    • Bulletin of the Korean Chemical Society
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    • v.34 no.11
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    • pp.3312-3316
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    • 2013
  • Single crystals of hexagonal graphenes were successfully grown on Cu foils using the atmospheric pressure chemical vapor deposition (CVD) method. We investigated the effects of reaction parameters, such as the growth temperature and annealing time, on the size, coverage, and density of graphene domains grown over Cu foil. The mean size of the graphene domains increased significantly with increases in both the growth temperature and annealing time, and similar phenomena were observed in graphene domains grown by low pressure CVD over Cu foil. From the comparison of micro Raman spectroscopy in the graphene films grown with different annealing times, we found that the nucleation and growth of the domains were strongly dependent on the annealing time and growth temperature. Therefore, we confirmed that when reaction time was same, the number of layers and the degree of defects in the synthesized graphene films both decreased as the annealing time increased.