• Computers and Concrete
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• v.25 no.4
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• pp.311-325
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• 2020

In this research work, the hygrothermal and mechanical buckling responses of simply supported FG sandwich plate seated on Winkler-Pasternak elastic foundation are investigated using a novel shear deformation theory. The current model take into consideration the shear deformation effects and ensures the zero shear stresses on the free surfaces of the FG-sandwich plate without requiring the correction factors "Ks". The material properties of the faces sheets of the FG-sandwich plate are assumed varies as power law function "P-FGM" and the core is isotropic (purely ceramic). From the virtual work principle, the stability equations are deduced and resolved via Navier model. The hygrothermal effects are considered varies as a nonlinear, linear and uniform distribution across the thickness of the FG-sandwich plate. To check and confirm the accuracy of the current model, a several comparison has been made with other models found in the literature. The effects the temperature, moisture concentration, parameters of elastic foundation, side-to-thickness ratio, aspect ratio and the inhomogeneity parameter on the critical buckling of FG sandwich plates are also investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.173-173
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• 2010

$Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.

• Journal of the Earthquake Engineering Society of Korea
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• v.9 no.3 s.43
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• pp.1-8
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• 2005

This paper describes a new objective methodology of seismic building damage assessment which is called Advanced Component Method(ACM). ACM is a major attempt to replace the conventional loss estimation procedure, which is based on subjective measures and the opinions of experts, with one that objectively measures both earthquake intensity and the response ol buildings. First, response of typical buildings is obtained analytically by nonlinear seismic static analysis, push-over analyses. The spectral displacement Is used as a measure of earthquake intensity in order to use Capacity Spectrum Method and the damage functions for each building component, both structural and non-structural, are developed as a function of component deformation. Examples of components Include columns, beams, floors, partitions, glazing, etc. A repair/replacement cost model is developed that maps the physical damage to monetary damage for each component. Finally, building response, component damage functions, and cost model were combined probabilistically, using Wonte Carlo simulation techniques, to develop the final damage functions for each building type. Uncertainties in building response resulting from variability in material properties and load assumptions were incorporated in the Latin Hypercube sampling technique. The paper also presents and compares ACM and conventional building loss estimation based on historical damage data and reported loss data.