• Current Optics and Photonics
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• v.4 no.1
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• pp.9-15
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• 2020

Fresnel zone plates have been widely used in many applications, such as x-ray telescopes, microfluorescence, and microimaging. To obtain an x-ray Fresnel zone plate, many fabrication methods, such as electron-beam etching, ion-beam etching and chemical etching, have been developed. Fresnel zone plates fabricated by these methods will inevitably lead to some nonideal factors, which have an impact on the focusing characteristics of the zone plate. In this paper, the influences of these nonideal factors on the focusing characteristics of the zone plate are studied systematically, by numerical simulations based on scalar diffraction theory. The influence of the thickness of a Fresnel zone plate on the absolute focusing efficiency is calculated for a given incident x-ray's wavelength. The diffraction efficiency and size of the focal spot are calculated for different incline angles of the groove. The simulations of zone plates without struts, with regular struts, and with random struts are carried out, to study the effects of struts on the focusing characteristics of a zone plate. When a Fresnel zone plate is used to focus an ultrashort x-ray pulse, the effect of zone-plate structure on the final pulse duration is also discussed.

• The Transactions of the Korean Institute of Power Electronics
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• v.23 no.2
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• pp.139-146
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• 2018

This work puts forward a theoretical analysis on position estimation performance of interior permanent magnet synchronous motor (IPMSM) according to the injection frequency in carrier-based sensorless operation. The effects of spatial harmonics on inductance and voltage distortion due to the nonideal characteristics of IPMSM and inverter are examined as factors influencing the position estimation performance. Furthermore, the position estimation performance is analyzed by calculating the current at the switching instant in several operating conditions. In summary, the half switching frequency injection is more robust to the nonideal characteristics of IPMSM, especially with light load condition. The validity of the analysis is verified by the simulation and experimental results.

• Journal of Power Electronics
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• v.19 no.2
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• pp.333-343
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• 2019

Dead time and the nonideal characteristics of components all lead to phase voltage distortions. In order to eliminate the harmful effects caused by distortion, numerous methods have been proposed. The efficacy of a method mainly depends on two factors, the compensation voltage amplitude and the phase current polarity. Theoretical derivations and experiments are given to explain that both of these key factors can be deduced from the compensation time, which is defined as the error time between the ideal phase voltage duration and the actual phase voltage duration in one Pulse Width Modulation (PWM) period. Based on this regularity, a novel method for compensating phase voltage has been proposed. A simple circuit is constructed to realize the real-time feedback of the phase voltage. Utilizing the actual phase voltage, the compensation time is calculated online. Then the compensation voltage is derived. Simulation and experimental results show the feasibility and effectivity of the proposed method. They also show that the error voltage is decreased and that the waveform is improved.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.239-247
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• 1996

The accuracy of sample-and-hold amplifiers (SHA's) empolying a CMOS process in limited by nonideal factors such as linearity errors of an op amp and feedthrough errors of switches. In this work, after some linearity improvement techniques for an op amp are discussed, three different SHA's for video signal processing are designed, simulated, and compared. The CMOS SHA design techniques with a 12-bit level accuracy are proposed by minimizing cirucit errors based on the simulated results.

• Journal of the Korean institute of surface engineering
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• v.53 no.6
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• pp.330-342
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• 2020

Since the original report on ferroelectricity in Si-doped HfO2 in 2011, fluorite-structured ferroelectrics have attracted increasing interest due to their scalability, established deposition techniques including atomic layer deposition, and compatibility with the complementary-metal-oxide-semiconductor technology. Especially, the emerging fluorite-structured ferroelectrics are considered promising for the next-generation semiconductor devices such as storage class memories, memory-logic hybrid devices, and neuromorphic computing devices. For achieving the practical semiconductor devices, understanding polarization switching kinetics in fluorite-structured ferroelectrics is an urgent task. To understand the polarization switching kinetics and domain dynamics in this emerging ferroelectric materials, various classical models such as Kolmogorov-Avrami-Ishibashi model, nucleation limited switching model, inhomogeneous field mechanism model, and Du-Chen model have been applied to the fluorite-structured ferroelectrics. However, the polarization switching kinetics of fluorite-structured ferroelectrics are reported to be strongly affected by various nonideal factors such as nanoscale polymorphism, strong effect of defects such as oxygen vacancies and residual impurities, and polycrystallinity with a weak texture. Moreover, some important parameters for polarization switching kinetics and domain dynamics including activation field, domain wall velocity, and switching time distribution have been reported quantitatively different from conventional ferroelectrics such as perovskite-structured ferroelectrics. In this focused review, therefore, the polarization switching kinetics of fluorite-structured ferroelectrics are comprehensively reviewed based on the available literature.