• Title/Summary/Keyword: Non-uniform plasma

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Study of FFF with Optically-Controlled Microwave Pulses in Non-uniform Plasma Layer

  • Wang, Xue;Seo, Dong-Ho;Kim, Yong-K.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.149-150
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    • 2009
  • In this paper we study on the semiconductor characteristic by calculating the variation of reflection function in microstrip lines, which has open-ended termination containing an optically induced plasma region. The variation of impedances resulting from the presence of plasma has evaluated with time and frequency domain. The responses have been also evaluated theoretically for changing the phase of the variation in the reflection.

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Diamond Deposition by Multi-cathode DC PACVD

  • Lee, Jae-Kap;Lee, Wook-Seong;Baik, Young-Joon;Eun, Kwang-Yong
    • The Korean Journal of Ceramics
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    • v.3 no.1
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    • pp.24-28
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    • 1997
  • Diamond deposition by muti-cathode DC PACVD has been investigated. Five cathodes were independently connected to their own DC power supplies. The voltage and current of each cathods were varied up to 700 V and 3.5 A, respectively. The plasma formation and the diamond deposition behaviour on a substrate of 3 inch in diameter were investigated by optical emission spectroscopy, SEM and Raman spectroscopy. The plasma formed by five cathodes was non-uniform, which was depended on the geometry of cathods array. The growth rate and the quality of diamond film were closely related to the spatial distribution of the plasma.

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Numerical Calculations and Analyses in Diagonal Type Magnetohydrodynamic Generator

  • Le, Chi Kien
    • Journal of Electrical Engineering and Technology
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    • v.8 no.6
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    • pp.1365-1370
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    • 2013
  • This paper examines the effects of magnetic induction attenuation on current distribution in the exit regions of the Faraday-type, non-equilibrium plasma Magnetohydrodynamic (MHD) generator by numerical calculation using cesium-seeded helium. Calculations show that reasonable magnetic induction attenuation creates a very uniform current distribution near the exit region of generator channel. Furthermore, it was determined that the current distribution in the middle part of generator is negligible, and the output electrodes can be used without large ballast resistors. In addition, the inside resistance of the exit region and the current concentration at the exit electrode edges, both decrease with the attenuation of magnetic flux density. The author illustrates that the exit electrodes of the diagonal Faraday-type, non-equilibrium plasma MHD generator should be arranged in the attenuation region of the magnetic induction, in order to improve the electrical parameters of the generator.

Consideration of CCD Gate Structure in the Determination of the Point Spread Function of Yohkoh Soft X-Ray Telescope (SXT)

  • Shin, Jun-Ho;Sakurai, Takashi
    • The Bulletin of The Korean Astronomical Society
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    • v.37 no.1
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    • pp.93.2-93.2
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    • 2012
  • Point Spread Function (PSF) is one of the most important optical characteristics for describing the performance of a telescope. And a concept of subpixelization is inevitable in evaluating the undersampled PSF (Shin and Sakurai 2009). Then, the internal structure of Yohkoh SXT CCD pixel is not uniform: For the top half of pixel area, the X-ray should pass a so-called gate structure where the charges are transferred to an output amplifier. This gate structure shows energy-dependent sensitivity (Tsuneta et al. 1991). For example, for Al-K (8.34 A) X-ray emission, the transmission of the polysilicon gate is about 0.9. Also, for the peak coronal response of the SXT thin filters, around 17 angstrom (0.729 keV), the transmission of the gate is about 0.6, falling off sharply towards longer wavelengths. It should be noted that this spectrally dependent non-uniform response of each CCD pixel will certainly have a noticeable effect on the properties of the PSF at longer wavelengths. Therefore, especially for analyzing the undersampled PSF of low energy source, a careful consideration of non-uniform internal pixel structure is required in determining the shape of the PSF core. The details on the effect of gate structure will be introduced in our presentation.

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Performance Enhancement due to Oxygen Plasma Treatment on the Gate Dielectrics of OTFTs (게이트 절연막의 $O_2$플라즈마 처리에 의한 펜타센 OTFT의 성능 개선)

  • 이명원;김광현;허영헌;안정근
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.7
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    • pp.494-498
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    • 2003
  • In this paper, the plasma treatment on gate surface has been applied prior to deposition of pentacene and the effects on performance were investigated. The Plasma treatment produced the mobility of 0.05$\textrm{cm}^2$/V.sec which is 10 times larger than the non-treated. The resistance was also reduced from 400K$\Omega$ to 50K$\Omega$. In addition, the standard deviation of performance parameters variation was reduced with the plasma exposure time, which implies that plasma treatment makes the gate surface states be uniform across the whole wafer area. The performance parameters were increased with the exposure time up to 5min, after which they degraded again. Therefore, the optimal exposure time was found to be 5min.

중성빔 식각을 이용한 Metal Gate/High-k Dielectric CMOSFETs의 저 손상 식각공정 개발에 관한 연구

  • Min, Gyeong-Seok;O, Jong-Sik;Kim, Chan-Gyu;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.287-287
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    • 2011
  • ITRS(international technology roadmap for semiconductors)에 따르면 MOS (metal-oxide-semiconductor)의 CD(critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/SiO2를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두되고 있다. 일반적으로 metal gate를 식각시 정확한 CD를 형성시키기 위해서 plasma를 이용한 RIE(reactive ion etching)를 사용하고 있지만 PIDs(plasma induced damages)의 하나인 PICD(plasma induced charging damage)의 발생이 문제가 되고 있다. PICD의 원인으로 plasma의 non-uniform으로 locally imbalanced한 ion과 electron이 PICC(plasma induced charging current)를 gate oxide에 발생시켜 gate oxide의 interface에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 metal gate의 식각공정에 HDP(high density plasma)의 ICP(inductively coupled plasma) source를 이용한 중성빔 시스템을 사용하여 PICD를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. 식각공정조건으로 gas는 HBr 12 sccm (80%)와 Cl2 3 sccm (20%)와 power는 300 w를 사용하였고 200 eV의 에너지로 식각공정시 TEM(transmission electron microscopy)으로 TiN의 anisotropic한 형상을 볼 수 있었고 100 eV 이하의 에너지로 식각공정시 하부층인 HfO2와 높은 etch selectivity로 etch stop을 시킬 수 있었다. 실제 공정을 MOS의 metal gate에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU(North Carolina State University) CVC model로 effective electric field electron mobility를 구한 결과 electorn mobility의 증가를 볼 수 있었고 또한 mos parameter인 transconductance (Gm)의 증가를 볼 수 있었다. 그 원인으로 CP(Charge pumping) 1MHz로 gate oxide의 inteface의 분석 결과 이러한 결과가 gate oxide의 interface trap양의 감소로 개선으로 기인함을 확인할 수 있었다.

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Determination of magneto-hydrodynamic quantities in umbrae and bright points using MHD seismology

  • Cho, Il-Hyun;Moon, Yong-Jae
    • The Bulletin of The Korean Astronomical Society
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    • v.43 no.1
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    • pp.53.2-53.2
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    • 2018
  • We perform seismological diagnostics of the physical parameters in umbral photospheres and G-band bright points. The technique is based on the theory of slow magneto-acoustic waves in a non-isothermally stratified photosphere with uniform vertical magnetic fields. For the seismology of sunspot umbrae, we calculate the weighted frequency of three-minute oscillations observed by SDO/HMI continuum and use it to estimate the Alfvn speed and plasma-beta, which range 7.5-10.5 km/s and 0.65-1.15, respectively. We identify and track bright points in the G-band movie by using a 3D region growing method. Then we apply the seismological diagnostics to the bright points in the Hinode/BFI Blue continuum. We will present the Alfvn speed and plasma-beta in the bright points.

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Numerical Modeling for GaN Deposition by MOCVD: Effects of the Gas Inlet

  • Yang, Wonkyun;Joo, Junghoon
    • Applied Science and Convergence Technology
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    • v.23 no.3
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    • pp.139-144
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    • 2014
  • GaN deposition equipment and processes for the fabrication of white LEDs (Light Emitting Diode) using MOCVD (Metal Organic Chemical Vapor Deposition) were numerically modeled to analyze the effects of a reactive gas introduction strategy. The source gases, TMGa and $NH_3$, were injected from a shower head at the top of the chamber; the carrier gases, $H_2$ or $N_2$, were introduced using two types of injection structures: vertical and horizontal. Wafers sat on the holder at a radial distance between 100 mm and 150 mm. The non-uniformity of the deposition rates for vertical and horizontal injection were 4.3% and 3.1%, respectively. In the case of using $H_2$ as a carrier gas instead of $N_2$, the uniform deposition zone was increased by 20%.

A Study on NOx Removal Efficiency Depending on Electrode Configurations of Silent Discharges (무성방전 플라즈마 전극구조에 대한 질소산화물 제거효율 연구)

  • Hyung-Taek Kim;Young-Sik Chung;Myung-Whan Whang;Elena. A. Filimonova
    • Journal of the Korean Society of Safety
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    • v.17 no.3
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    • pp.112-117
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    • 2002
  • A comparative investigation of an experimental and a simulation of chemical kinetics for NOx removal from silent(dielectric-barrier) discharges is presented. Several types of dielectric-barrier discharges were implemented depending upon the configuration of electrodes. The simulation was based on an approximate mathematical model for plasma cleaning of waste gas. The influence of non-uniform distributions of species due to the production of primary active particles in the streamer channel was taken into account. A comparison of observed experimental to the calculated removal efficiency of NOx showed acceptable agreement.

Reactor design of PECVD system using a liquid aerosol feed method (미립액상법을 위한 PECVD 반응로설계)

  • 정용선;오근호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.2
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    • pp.235-243
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    • 1997
  • The high-$T_c$ superconducting phase, $YBa_2Cu_3O_x$, was deposited on the single crystal MgO substrate, using a liquid aerosol feed method in a plasma enhanced chemical vapor deposition(PECVD) reactor. The effect of the plasma distribution depending on the design of a reactor was studied by the analysis of the microstructures of thin films. The particles landed were frequently observed on the films and the two causes that were responsible for the particle deposition were explained. The particles were deposited by the unstable and non-uniform plasma and the low evaporation rate of the precursors. Also, the thin film deposition rate decreased significantly as the distance between the evaporating location and the substrate increased.

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