• Journal of Forest and Environmental Science
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• v.15 no.1
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• pp.77-88
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• 1999

This experiment was carried out to compare the cultural characteristics of mycorrizal fungi associated with Pinus species, and to form mycorrhizal association with Pinus thunbergii by artificial inoculation of these fungi. Mycorrhizal fungi tested showed great variations in cultural characteristics. Most fungal isolates was best grown on MP medium, except PDA for Lepista sp.(Ln73/92). Hagem for Rhizopogon rubescens(FRI91017), and FDA for Paxillus sp.(Pa60/92). Optimum temperature for these fungi was $25^{\circ}C$, except $30^{\circ}C$ for Pisolithus tinctorius(FRI91004 and Pt1). The range of pH conditions favorable for these fungal isolates were also variable from weak acidic(pH5) to weak alkalic(pH8). Utilization of the carbon sources for these mycorrhizal fungi was different. Fructose, glucose, and maltose were all utilized well, while xylose was not utilized generally. Mycelial growth on the media supplemented with potassium nitrate was better than those on other media with urea, asparagine, or peptone as a nitrogen source, and the poor growth was observed on the media with urea. Pisolithus tinctorius(Pt1) among 7 mycorrhizal fungi artificially inoculated for the mycorrhizal synthesis on pinus thunbergii seedlings in the test tube containing a mixture of peat moss-vermiculite(2:1, v/v) formed mycorrhizae successfully after 3 months. P. tinctorius formed branched and unbranched roots covered with thick fungal mantle and radiating extemal hyphae. Mycorrhizal root cross-sectioned by hand, stained, and observed by Nomarski interference microscope showed typical characteristics of ectomycorrhizae: fungal mantle on epidermal cells and thick Hartig net hyphae around cortex cells.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.271-284
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• 1999

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single-crystalline 4H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 4H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented substrates prepared by a modified Lely method. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, Raman spectroscopy, photoluminescence(PL), scanning electron microscopy (SEM) and other techniques were utilized. The best quality of 4H-SiC homoepitaxial layers was observed in conditions of growth temperature 1500$^{\circ}C$ and C/Si flow ratio 2.0 of C3H3 0.2sccm & SiH4 0.3sccm. The growth rate of epilayers was about 1.0$\mu\textrm{m}$/h in the above growth condition.

• Journal of Korean Vacuum Science & Technology
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• v.1 no.1
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• pp.30-37
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• 1997

Interactions of Cu films with Si substrates separated by thin layers of molybdenum and molybdenum nitride were investigated in the viewpoint of diffusion barrier to copper. the diffusion barrier behavior of the layers was studied as functions of deposition and annealing conditions by cross-sectional transmission electron microscopy and Nomarski microscopy. the layers deposited at $N_2$ gas ratios of 0.4 and 0.5 exhibited good diffusion barrier behaviors up to $700^{\circ}C$, mainly due to the phase transformation of molybdenum to $\gamma$-Mo$_2$N phase. The increase in the N gas ratio in deposition elevates the lower limit of barrier failure temperature. Futhermore, amorphous molybdenum nitride films deposited at 20$0^{\circ}C$ and 30$0^{\circ}C$ did not fail, while the crystalline $\gamma$-Mo$_2$N films deposited at 40$0^{\circ}C$ and 50$0^{\circ}C$ showed signs of interlayer interactions between Cu and Si after annealing at 75$0^{\circ}C$ for 30 minutes. Therefore, the amorphous nature of the molybdenum nitride layer enhanced its ability to reduce Cu diffusion and its stability as a diffusion barrier at elevated temperatures.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.303-308
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• 1999

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides(SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single-crystalline 4H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 4H-SiC homoepitaxial layers using a SiC-uncoated atmospheric pressure chamber and carried out using off-oriented substrates prepared by a modified Lely method. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, Raman spectroscopy, photoluninescence(PL), scanning electron microscopy(SEM) and other techniques were utilized. The best quality of 4H-SiC homoepitaxial layers was observed in conditions of growth temperature $1500^{\circ}C$ and C/Si flow ratio 2.0 of $C_{3}H_{8}\;0.2\;sccm\;&\;SiH_{4}\;0.3\;sccm$. The growth rate of epilayers was about $1.0\mu\textrm{m}/h$ in the above growth condition.

• Animal cells and systems
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• v.1 no.2
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• pp.355-361
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• 1997

We have screened available chromosomal deficiencies on the X chromosome for genetic loci whose zygotic expression is required for body-wall muscle development during embryogenesis in Caenorhabditis elegans. Previously, it had been reported that no sign of muscle development was detected in nullo-X embryos arrested at an early stage of embryogenesis. Based on this observation, it has been suggested that genetic loci exist on the X chromosome whose zygotic expression is essential for body-wall muscle formation. In order to identify such myogenic loci, 9 chromosomal deficiencies covering approximately 45% of the X chromosome have been tested. Homozygous embryos from these deficiency strains were collected and terminal phenotypes of arrested embryos were observed by Nomarski microscopy. As a secondary assay, monoclonal antibodies against two myosin heavy chain (MHC) isoforms, the products of the myo-3 and unc-54 genes, were used to detect body-wall muscle differentiation. All the homozygous deficiency embryos were positively stained with both MHC antibodies and muscle twitching movement was observed in most cases. Combined with previously analyzed deficiencies, our deficiency screen has covered approximately 70% of the X chromosome. We conclude that the regions covered by the available deficiencies on the X chromosome do not include any myogenic locus required for body-wall muscle formation. Alternatively, the possibility that nullo-X embryo may not form body-wall muscle due to a general failure to differentiate during embryogenesis remains to be tested.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.422-448
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• 1996

Low-temperature epitaxial growth of Si and SiGe layers of Si is one of the important processes for the fabrication of the high-speed Si-based heterostructure devices such as heterojunction bipolar transistors. Low-temperature growth ensures the abrupt compositional and doping concentration profiles for future novel devices. Especially in SiGe epitaxy, low-temperature growth is a prerequisite for two-dimensional growth mode for the growth of thin, uniform layers. UHV-ECRCVD is a new growth technique for Si and SiGe epilayers and it is possible to grow epilayers at even lower temperatures than conventional CVD's. SiH and GeH and dopant gases are dissociated by an ECR plasma in an ultrahigh vacuum growth chamber. In situ hydrogen plasma cleaning of the Si native oxide before the epitaxial growth is successfully developed in UHV-ECRCVD. Structural quality of the epilayers are examined by reflection high energy electron diffraction, transmission electron microscopy, Nomarski microscope and atomic force microscope. Device-quality Si and SiGe epilayers are successfully grown at temperatures lower than 600℃ after proper optimization of process parameters such as temperature, total pressure, partial pressures of input gases, plasma power, and substrate dc bias. Dopant incorporation and activation for B in Si and SiGe are studied by secondary ion mass spectrometry and spreading resistance profilometry. Silicon p-n homojunction diodes are fabricated from in situ doped Si layers. I-V characteristics of the diodes shows that the ideality factor is 1.2, implying that the low-temperature silicon epilayers grown by UHV-ECRCVD is truly of device-quality.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.75-78
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• 2006

In case of contacts between semiconductor and metal in semiconductor circuits, they become unstable because of thermal budget. To prevent these problems, we use diffusion barrier that has a good thermal stability between metal and semiconductor. So we consider the diffusion barrier to prevent the increase of contact resistance between the interfaces of metals and semiconductors, and the increase of resistance and the reaction between the interfaces. In this paper we deposited tungsten boron carbon nitride (W-B-C-N) thin film on silicon substrate. The impurities of the $1000\;{\AA}-thick$ W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between metal thin films $(Cu-2000\;{\AA})$ and silicon during the high temperature $(700\~1000^{\circ}C)$ annealing process.

• Korean Journal of Optics and Photonics
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• v.1 no.1
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• pp.46-51
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• 1990

Laser plasma was generated by a 1GW iodine photodissociation laser ($\lambda$=1.315$\mu\textrm{m}$, E=12.7J) whose output beam was focused on a molybdenum target surface. The experiment was conducted in a vacuum chamber under 1D-sTorr and several tens of laser shooting were necessary for sufficient exposure for the PBS resist of 111m thickness. Aluminium was coated on the top of the resist by 0.1$\mu\textrm{m}$ thickness which acts as an X-ray filter to cut off the visible and the ultraviolet lights. A bio-specimen was put directly on the aluminium coated resist and located at a distance of 3 cm from the X-ray source. The replicas of a steel mesh, spider's web. and a red blood cell were obtained by this technique and were observed by Nomarski microscope and SEM. The limitation of its resolution is determined by the X-ray source size and Fresnel diffraction effect, and its theoretical prediction is well matched with the experimental results. In this experiment, a resolution better than 0.1$\mu\textrm{m}$ could be obtained. ained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.113-114
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• 2009

Silicon carbide is one of the most attractive and promising wide band-gap semiconductor material with excellent physical properties and huge potential for electronic applications. Up to now, the most successful method for growth of large SiC crystals with high quality is the physical vapor transport (PVT) method [1, 2]. Since further reduction of defect densities in larger crystal are needed for the true implementation of SiC devices, many researchers are focusing to improve the quality of SiC single crystal through the process modifications for SiC bulk growth or new material implementations [3, 4]. It is well known that for getting high quality SiC crystal, source materials with high purity must be used in PVT method. Among various source materials in PVT method, a SiC powder is considered to take an important role because it would influence on crystal quality of SiC crystal as well as optimum temperature of single crystal growth, the growth rate and doping characteristics. In reality, the effect of powder on SiC crystal could definitely exhibit the complicated correlation. Therefore, the present research was focused to investigate the quality difference of SiC crystal grown by conventional PVT method with using various SiC powders. As shown in Fig. 1, we used three SiC powders with different particles size. The 6H-SiC crystals were grown by conventional PVT process and the SiC seeds and the high purity SiC source materials are placed on opposite side in a sealed graphite crucible which is surrounded by graphite insulation[5, 6]. The bulk SiC crystal was grown at $2300^{\circ}C$ of the growth temperature and 50mbar of an argon pressure. The axial thermal gradient across the SiC crystal during the growth is estimated in the range of $15\sim20^{\circ}C/cm$. The chemical etch in molten KOH maintained at $450^{\circ}C$ for 10 min was used for defect observation with a polarizing microscope in Nomarski mode. Electrical properties of bulk SiC materials were measured by Hall effect using van der Pauw geometry and a UV/VIS spectrophotometer. Fig. 2 shows optical photographs of SiC crystal ingot grown by PVT method and Table 1 shows electrical properties of SiC crystals. The electrical properties as well as crystal quality of SiC crystals were systematically investigated.

• The Journal of Natural Sciences
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• v.6 no.1
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• pp.5-39
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• 1993

The Blue-green algae collected from whole coasts of Korea were investigated morphotaxonomically in order to list up Korean marine Cyanophyta and clarify their taxnomic position. As a result, 36 species, 20 genus, 6 families belonging to 3 orders were identified. Among these, 14 species were recorded for the first time in Korea. They are Chroococcus minutus (K$\"{u}$tzing) N$\"{a}$geli, Merismopedia punctata Meyen, Microcystis ichtyoblabe K$\"{u}$zing, Dermocarpa leibleiniae (Reinsch) Born. et Thur., Hydrocoleum confluens (Setchell et Gardner) Drouet, Lyngbya sordida (Zanard.) Gomont, Phormidium forveolarum (Mont.) Gomont, Phormidium hansgieri Schmidle, Skujaella hildebrandtii (Gomont.) de Toni, Sphaeronema lithophila (Ercegovic) Umezaki, Spirulina tenerrima K$\"{u}$tzing, Hormothamnion enteromorphoides Grunow, Michrochaete aeruginea Batters, Michrochaete grisea Thuret ex Born. et flah.. Using the phase contrast microscope and the Nomarski interference micrope, we made photomicrographs of minute blue green algae. The cellular inclusions especially PHB(poly-$\SS$-hydroxy-butyrate) granules of the blue-green algae identified were investigated. The species clearly characteriged to have PHB granule were Lyngbya confervoides, L. semiplena, Phormidium corium, Sirocoleum kurzii, Hormothamnion enteromorphoides and Calothrix crustacea. These result would be fundamental data for estabilishing phylogenetic system of blue-green algae based on physio-biochemical characteristics in future.