• Journal of the Korean Society of Safety
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• v.12 no.3
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• pp.106-113
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• 1997

The thermal characteristics of two binary mixtures by sodium azide/manganese dioxide and ferric oxide, two ternary mixtures by sodium azide/silicon dioxide/manganese dioxide and ferric oxide were studied to obtain the basic data of gas-generating agents for air bags. The thermal reaction for all mixtures started at about $420^{\circ}C$, but the temperature at which the reaction rate reached a maximum was different with the states of samples. According to reaction results, nitrogen, nitrogen oxide and nitrogen dioxide were detected by GC-MS and so many kinds of new chemicals from sodium azide and metal oxide mixtures by XRD. NMS is considered as most stable and reasonable mixture for this types of gas-generating agents.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by 0.35$\mu\textrm{m}$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary ton Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and Si$_2$NO species near the new Si-SiO$_2$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the Si-SiO$_2$ interface and contributed to electron trap generation.

• Journal of Korean Society on Water Environment
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• v.20 no.2
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• pp.104-109
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• 2004

Removal of nutrients from domestic sewage or industrial wastewater is needed to protect surface waters from eutrophication. This research was carried out to remove the nitrogen (N) and phosphorus (P) from the wastewater using the iron oxide obtained from the steel industry and the natural zeolite, respectively. This research was conducted in both batch and continuous systems. The removal efficiency of the nutrients was evaluated in the batch system using the varying concentrations of zeolite and iron oxide added. The removal efficiency of N was 60% at the 8g of zeolite added. In the same condition, the removal efficiencies of N were 76% and 82% at 12g and 16g of zeolite added, respectively. Removal efficiency of P was 80% as 8g of iron oxide was added. The removal efficiency of P was correspondingly increased as the concentration of iron oxide was increased. Continuous column system was also used to evaluate the removal efficiency of N and P by the addition of zeolite and ferric oxide, respectively. Removal efficiencies of N were compared in the mixed packing, two stage, and four stage columns, respectively. The removal efficiencies (80%) of N in the separate packed columns (two and four stages) were higher than the mixed packing column (400%) after 90 hr. Whereas, the removal efficiencies of P were similar to each other in the three columns.

• Electrical & Electronic Materials
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• v.7 no.1
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• pp.25-31
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• 1994

Properties of oxynitride films reoxidized by $N_2{O}$ gas after thermal oxidation and $N_2{O}$ oxide films directly oxidized by using $N_2{O}$ gas on the bare silicon wafer have been studied. From the AES analysis, nitrogen pile-up at the interface of Si/oxynitride and Si/$N_2{O}$ oxide has observed. $N_2{O}$ oxide and oxynitride films have the self-limited characteristics. Therefore, it will be possible to obtain ultra-thin films. Nitrogen pile-up at the interfaces of Si/oxynitride and Si/$N_2{O}$ oxide strengthens film structure and improves dielectric reliability. Although fixed charge densities and interface trap densities of N20 oxide and oxynitride films have somewhat higher than those of thermal $SiO_2{O}$, $N_2{O}$ oxide and oxynitride films showed improved I-V characteristics and constant current stress.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.37-40
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• 1999

For the first time, charge trapping nonvolatile semiconductor memories with the deoxidized oxynitride gate dielectric is proposed and demonstrated. Gate dielectric wit thickness of less than 1 nm have been grown by postnitridation of pregrown thermal silicon oxides in NO ambient and then reoxidation. The nitrogen distribution and chemical state due to NO anneal/reoxidation were investigated by M-SIMS, TOF-SIMS, AES depth profiles. When the NO anneal oxynitride film was reoxidized on the nitride film, the nitrogen at initial oxide interface not only moved toward initial oxide interface, but also diffused through the newly formed tunnel oxide by exchange for oxygen. The results of reoxidized oxynitride(ONO) film analysis exhibits that it is made up of SiO$_2$(blocking oxide)/N-rich SiON interface/Si-rich SiON(nitrogen diffused tunnel oxide)/Si substrate. In addition, the SiON and the S1$_2$NO Phase is distributed mainly near the tunnel oxide, and SiN phase is distributed mainly at tunnel oxide/Si substrate interface.

• Progress in Superconductivity and Cryogenics
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• v.10 no.4
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• pp.38-42
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• 2008

Miniature J-T cryocooler using nitrogen or argon has been widely adopted in cooling infrared sensor for space/military application and cryosurgery. Argon or nitrogen, however, has relatively low specific cooling power compared to nitrous oxide, but the ultimate operating temperature is much lower than nitrous oxide. On the other hand, nitrous oxide has large specific cooling power, but the operating temperature is limited to its boiling point (>183K). To compromise the different characteristics of these gases, the performance of miniature J-T cryocooler using argon and nitrous oxide mixture is investigated in this paper. Three different compositions of mixture (25/75, 50/50, and 75/25 molar fraction) are blended and tested. The results are compared with the experiments of pure argon and pure nitrous oxide. The experimental results show some encouraging potentiality of mixed refrigerant J-T cryocooler. The critical clogging problem, however, was observed with argon and nitrous oxide mixture, and the lowest achievable temperature with this mixture was limited to the freezing point of nitrous oxide. The paper discusses detailed clogging process of the mixture and suggests an alternative.

• 전기의세계
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• v.30 no.4
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• pp.227-230
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• 1981

The variation of sheet resistance and the reduction of masking oxide thickness with the flow rate of nitrogen gas has been measured in Boron predeposition process with Planar Diffusion source, BN-975. At 900.deg. C, the sheet resistance varied as much as 75% when the nitrogen flow rate was changed from 0.4 liters/min to 2.0 liters/min. At 975.deg. C, however, only 12% of sheet resistance variation was observed under the same flow rate change. The reduction of masking oxide thickness at 975.deg. C for a 5 min predeposition was 600 nm when the nitrogen flow rate was 0.4 liters/min. When the flow rate incresased to 1.9 liters/min, however, only 100nm of masking oxide was consumed in a similar predeposition process.

• Journal of the Korean Chemical Society
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• v.65 no.6
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• pp.415-418
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• 2021

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.9-12
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• 1998

Film characteristics of thin reoxidized nitrided oxides were investigated by SIMS analysis and C-V method in order to use the gate dielectric for charge-trap type NVSMs instead of ONO stacked layers. Nitric oxide(NO) annealed film has the nitrogen content sharply peaked at the Si-SiO$_2$ interface, while it is broad for nitrous oxide($N_2$O) ambient. The nitrogen peak concentration increased with anneal temperature and time. The position of nitrogen content in the oxide layer was due to be precisely controlled. For the films annealed NO ambient at 80$0^{\circ}C$ for 30min. followed by reoxidized at 85$0^{\circ}C$, the maximum memory window of 3.5V was obtained and the program condition was +12V, 1msec for write and -l3V, 1msec for erase.

• 한국연소학회:학술대회논문집
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• 2015.12a
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• pp.295-296
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• 2015

We presented the methods calculating the reduction efficiency of nitrogen oxide for the low $NO_x$ burner as the pollution prevention facilities. The standard $NO_x$ concentration was used on the emission factor of LNG, $3.7g/m^3$. The $NO_x$ reduction efficiency based on the $NO_x$ concentration was presented and the relationships between the $NO_x$ concentration and the emission factor or the specific heat emission factor were derived. These results could be accurately reflected on calculating the amount of the nitrogen oxide emissions. In addition, according to the arrangement of the low $NO_x$ burners the methods of applying their $NO_x$ reduction efficiency were proposed. The $NO_x$ reduction efficiency for the facilities consisting of the low $NO_x$ burners and the non-low $NO_x$ burners could be estimated with information about the reduction efficiency of each low $NO_x$ burners, the fuel consumption rate, and the heating value of fuel.