• Journal of the Korean Chemical Society
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• v.35 no.4
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• pp.329-334
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• 1991

The x values and electrical conductivity of the nonstoichiometric compound NbO$_x$ have been measured in a temperature range 700$^{\circ}C$ to 1100$^{\circ}C$ under oxygen partial pressure of 2 ${\times}$ 10$^{-1}$ ∼ 1 ${\times}$ 10$^{-5}$ atm. The NbO$_x$ is a stoichiometrical compound of Nb$_2$O$_5$ under oxygen partial pressure higher than 1.0 ${\times}$ 10$^{-2}$ atm at the above temperature range. The x values were found to vary between 2.48491 and 2.49900 in a temperature range 700$^{\circ}C$ to 1100$^{\circ}C$ under oxygen partial pressure lower than 1 ${\times}$ 10$^{-3}$ atm. The enthalpy of the formation for x' in NbO$_{2.50000-x'}$(${\Delta}H_f$) increased of 15.98 to 17.26 kcal/mol under the conditions. The electrical conductivity (${\sigma}$) of the oxide varied from 10$_4$ to 10$_1$ ohm$_1$cm$_1$ in the above conditions. The activation energy for the conduction was about 1.7 eV. The oxygen pressure dependency of the conductivity (or 1/n value) was about -1/4. The nonstoichiometric conduction mechanism of the oxide has been discussed with the x' values, the ${\sigma}$ values, and the thermodynamic data.