• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.45-48
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• 2004

본 논문은 니켈실리사이드 (Ni-Silicide)의 열안정성을 개선하기 위해서 Ti와 TiN capping 층을 이용한 새로운 구조 Ni/Ti/Ni/Tin 구조를 제안하였다. 계면특성과 열안정성을 향상시키기 위해 타이타늄(Ti)을 니켈(Nickel) 사이에 적용하고, 니켈 실리사이드 형성 시 산소와의 반응을 억제하여 실리사이드의 응집현상을 개선시키고자 TiN capping을 적용 하였다. 니켈 실리사이드의 형성온도에 따른 $NiSi_2$로의 상변이를 억제할 수 있었고, 열안정성 평가를 위한 $700^{\circ}C$, 30분간 고온 열처리에서도 제안한 구조로 니켈실리사이드의 단면특성과 19 % 정도 면저항 특성을 개선하였다.

• Bulletin of the Korean Chemical Society
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• v.24 no.3
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• pp.325-333
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• 2003

An analysis of the electronic structure and bonding in the ternary silicide YNiSi₃is made, using extended Huckel tight-binding calculations. The YNiSi₃structure consists of Ni-capped Si₂dimer layers and Si zigzag chains. Significant bonding interactions are present between the silicon atoms in the structure. The oxidation state formalism of $(Y^{3+})(Ni^0)(Si^3)^{3-}$ for YNiSi₃constitutes a good starting point to describe its electronic structure. Si atoms receive electrons from the most electropositive Y in YNiSi₃, and Ni 3d and Si 3p states dominate below the Fermi level. There is an interesting electron balance between the two Si and Ni sublattices. Since the ${\pi}^*$ orbitals in the Si chain and the Ni d and s block levels are almost completely occupied, the charge balance for YNiSi₃can be rewritten as $(Y^{3+})(Ni^{2-})(Si^{2-})(Si-Si)^+$, making the Si₂layers oxidized. These results suggest that the Si zigzag chain contains single bonds and the Si₂double layer possesses single bonds within a dimer with a partial double bond character. Strong Si-Si and Ni-Si bonding interactions are important for giving stability to the structure, while essentially no metal-metal bonding exists at all. The 2D metallic behavior of this compound is due to the Si-Si interaction leading to dispersion of the several Si₂π bands crossing the Fermi level in the plane perpendicular to the crystallographic b axis.

• Korean Journal of Materials Research
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• v.14 no.6
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• pp.389-393
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• 2004

The silicide layer used as a diffusion barrier in microelectronics is typically required to be below 50 nm-thick and, the same time, the silicides also need to have low contact resistance without agglomeration at high processing temperatures. We fabricated Si(100)/15 nm-Ni/15 nm-Co samples with a thermal evaporator, and annealed the samples for 40 seconds at temperatures ranging from $700^{\circ}C$ to $1100^{\circ}C$ using rapid thermal annealing. We investigated microstructural and compositional changes during annealing using transmission electron microscopy and auger electron spectroscopy. Sheet resistance of the annealed sample stack was measured with a four point probe. The sheet resistance measurements for our proposed Co/Ni composite silicide was below 8 $\Omega$/sq. even after annealing $1100^{\circ}C$, while conventional nickel-monosilicide showed abrupt phase transformation at $700^{\circ}C$. Microstructure and auger depth profiling showed that the silicides in our sample consisted of intermixed phases of $CoNiSi_{x}$ and NiSi. It was noticed that NiSi grew rapidly at the silicon interface with increasing annealing temperature without transforming into $NiSi_2$. Our results imply that Co/Ni composite silicide should have excellent high temperature stability even in post-silicidation processes.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.667-670
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• 2003

Ni-silicide has low thermal stabiliy. This point is obstacle to apply NiSi to devices. So In this paper, we have studied for obtain thermal stability and analysis of dopant dependency of NiSi. And then we applied Ni-silicide to devices. To improvement of thermal stability, we deposit Ni70/Co10/Ni30/TiN100 to sample. Co midlayer is enhanced thermal stability of NiSi. Co/Ni/TiN, this structure show very difference between n-poly and p-poly in sheet resistance. But Ni/Co/Ni/TiN, structure show less difference. Also junction leakage is good.

• Journal of Information Display
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• v.2 no.2
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• pp.7-12
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• 2001

A viscous Ni solution was coated over amorphous Si thin film for evenly spread of Ni metal source. The Ni s. prepared by dissolving $NiCl_2$ into IN HCI and mixing with propylene glycol. $NiCl_2$ and Ni were deposited on the amorphous film after oven dry and they enabled to obtain a uniform crystallization. The crystallization using the viscous Ni solution was a Ni-silicide mediated process, the same process used with Ni metal layer. The crystallization temperature was lowered to $480^{\circ}C$ by the synergy effect of silicide-mediated crystallization and microwave-induced crystallization. Lateral crystallization was also enhanced such that the velocity of lateral crystallization by microwave annealing became faster than by furnace annealing.

• Journal of Powder Materials
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• v.6 no.3
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• pp.215-223
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• 1999

The synthesis of $Ni_5Si_2,\;Ni_2Si$ and NiSi has been investigated by mechanical alloying (MA) of Ni-27.9at%Si, Ni-33.3at%Si and Ni-50.0at%Si powder mixtures. As-received and premilled elemental powders were subjected to MA. The as-received Ni powder was spherical and the mean particle size 48.8$\mu$m, whereas the premilled Ni powder was flaky and the mean particle diameter and thickness were found to be 125 and 5$\mu$m, respectively. The mean surface area of the premilled Mi powder particle was 3.5 times as large as that of the as-received Ni powder particle. The as-received Si powder was was 10.0$\mu$m. Self-propagating high-temperature synthesis (SHS) reaction, followed by a slow reaction (a solid state diffusion), was observed to produce each Ni silicide during MA of the as-received elemental powders. In other word , the reactants and product coexisted for a long period of MA of time. Only SHS reaction was, however, observed to produce each Ni silicide during MA of the premilled elemental powders, indicating that each Ni sillicide formed rather abruptly at a short period of MA time. The mechanisms and reaction rates for the formation of the Ni silicides appeared to be influenced by the elemental powder particle size and shape as well as the heat of formation of the products $(Ni_5Si_2$longrightarrow-43.1kJ/mol.at., $Ni_2Si$$\rightarrow$-47.6kJ/mol.at.).

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.241-244
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• 2002

The dependence of NiSi properties such as sheet resistance and cross-sectional profile on the dopants was characterized. There was little difference of sheet resistance between various dopants such as As, p, BF2 and B just after R'n formation of NiSi. However, the NiSi properties showed strong dependence on the dopants when thermal treatment was applied after RTf formation. BFa .implanted silicon was the best stable property while As implanted one was the worst. The main reason of the excellence property of BF2 sample is believed to be the retardation of Ni diffusion by the F. Therefore, retardation of Ni diffusion is very desirable fur high performance NiSi technology.

• Journal of the Korean institute of surface engineering
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• v.38 no.1
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• pp.44-48
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• 2005

We prepared nickel silicide layers from p-Si(l00)/SiO₂(2000 Å)/poly-Si(700 Å)/Ni(400 Å) structures, feasible for gates in MOSFETs, by annealing them from 500℃～900℃ for 30 minutes. We measured the color coordination in visible range, cross sectional micro-structure, and surface topology with annealing temperature by an UV-VIS-IR spectrometer, field effect scanning electron microscope(FE-SEM), and scanning probe micro-scope respectively. We conclude that we may identify the nickel silicide by color difference of 0.90 and predict the silicide process reliability by color coordination measurement. The nickel silicide layers showed similar thickness while the columnar grains size and surface roughness increased as annealing temperature increased.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.1
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• pp.16-22
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• 2008

We fabricated thermally-evaporated 10 nm-Ni/30 nm and 70 nm Poly-Si/200 nm-$SiO_2/Si$ structures to investigate the thermal stability of nickel silicides formed by rapid thermal annealing(RTA) of the temperature of $300{\sim}1100^{\circ}C$ for 40 seconds. We employed for a four-point tester, field emission scanning electron microscope(FE-SEM), transmission electron microscope(TEM), high resolution X-ray diffraction(HRIXRD), and scanning probe microscope(SPM) in order to examine the sheet resistance, in-plane microstructure, cross-sectional microstructure evolution, phase transformation, and surface roughness, respectively. The silicide on 30 nm polysilicon substrate was stable at temperature up to $900^{\circ}C$, while the one on 70 nm substrate showed the conventional $NiSi_2$ transformation temperature of $700^{\circ}C$. The HRXRD result also supported the existence of NiSi-phase up to $900^{\circ}C$ for the Ni silicide on the 30 nm polysilicon substrate. FE-SEM and TEM confirmed that 40 nm thick uniform silicide layer and island-like agglomerated silicide phase of $1{\mu}m$ pitch without residual polysilicon were formed on 30 nm polysilicon substrate at $700^{\circ}C\;and\;1000^{\circ}C$, respectively. All silicides were nonuniform and formed on top of the residual polysilicon for 70 nm polysilicon substrates. Through SPM analysis, we confirmed the surface roughness was below 17 nm, which implied the advantage on FUSI gate of CMOS process. Our results imply that we may tune the thermal stability of nickel monosilicide by reducing the height of polysilicon gate.

• Korean Journal of Materials Research
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• v.14 no.7
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• pp.500-504
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• 2004

It is well-known that adjacent Pd-MILC enhanced the rate of Ni-MILC. And the phenomena can be explained by tensile stress propagation between amorphous silicon and Pd silicide which is catalyst of crystallization. In this study, we modified tensile stress by changing geometry of amorphous silicon to prove that there is a direct relation between tensile stress and Ni-MILC rate enhancement. When the tensile stress concentrated, the Ni-MILC rate was enhanced more(14.5 ${\mu}m/hr$) by Pd-MILC while the conventional Pd-MILC enhanced Ni-MILC rate was 11 ${\mu}m/hr$. As the result we can be sure that the tensile stress causes the enhancement of Ni-MILC rate.