• Journal of the Korean Society for Precision Engineering
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• v.19 no.1
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• pp.18-24
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• 2002

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.951-954
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• 2004

본 논문에서는 DLC(Diamond-like Carbon) 박막과 기판 사이에 금속층을 포함하는 DLC 박막의 기계적 특성을 분석하였다. 금속층은 sputtering법을 사용하고, DLC 박막은 PECVD법을 사용하여 각각 중착하였다. 티타늄(Ti), 니켄(Ni), 크롬(Cr)을 각 중간 금속층으로 사용한 후 DLC 박막과 실리콘(Si) 기판 간의 기계적 특성을 분석하였다. 각 막의 두께는 FE-SEM으로 확인하였고, DLC 박막의 구조 평가는 Raman spectrometer를 사용하여 분석하였으며, 각 금속층과 DLC 박막의 표면 상태는 AFM을 이용하여 확인하였다. XRD 분석을 통하여 박막의 격자분석을 하였고, SIMS(secondary ion mass spectrometry) 분석을 통하여 DLC 박막의 depth Profile을 확인하였다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1507-1510
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• 2005

This study was carried out as a part of the research on the development of a maskless and electroless process for fabricating metal micro/nanostructures by using a nanoindenter and an electroless deposition technique. $2-\mu{m}-deep$ indentation tests on Ni and Cu samples were performed. The elastic recovery of the Ni and Cu was 9.30% and 9.53% of the maximum penetration depth, respectively. The hardness and the elastic modulus were 1.56 GPa and 120 GPa for Ni and 1.49 GPa and 100 GPa for Cu. The effect of single-point diamond machining conditions such as the Berkovich tip orientation (0, 45, and $90^{\circ}$) and the normal load (0.1, 0.3, 0.5, 1, 3, and 5 mN), on both the deformation behavior and the morphology of cutting traces (such as width and depth) was investigated by constant-load scratch tests. The tip orientation had a significant influence on the coefficient of friction, which varied from 0.52-0.66 for Ni and from 0.46-0.61 for Cu. The crisscross-pattern sample showed that the tip orientation strongly affects the surface quality of the machined area during scratching. A selective deposition of Cu at the pit-like defect on a p-type Si(111) surface was also investigated. Preferential deposition of the Cu occurred at the surface defect sites of silicon wafers, indicating that those defect sites act as active sites for the deposition reaction. The shape of the Cu-deposited area was almost the same as that of the residual stress field.

• The Journal of Advanced Prosthodontics
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• v.2 no.4
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• pp.117-121
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• 2010

PURPOSE. The present study was intended to evaluate the effect of soldering techniques with infrared ray and gas torch under different gap distances (0.3 mm and 0.5 mm) on the tensile strength and surface porosity formation in Ni-Cr base metal alloy. MATERIALS AND METHODS. Thirty five dumbbell shaped Ni-Cr alloy specimens were prepared and assigned to 5 groups according to the soldering method and the gap distance. For the soldering methods, gas torch (G group) and infrared ray (IR group) were compared and each group was subdivided by corresponding gap distance (0.3 mm: G3 and IR3, 0.5 mm: G5, IR5). Specimens of the experimental groups were sectioned in the middle with a diamond disk and embedded in solder blocks according to the predetermined distance. As a control group, 7 specimens were prepared without sectioning or soldering. After the soldering procedure, a tensile strength test was performed using universal testing machine at a crosshead speed 1 mm/min. The proportions of porosity on the fractured surface were calculated on the images acquired through the scanning electronic microscope. RESULTS. Every specimen of G3, G5, IR3 and IR5 was fractured on the solder joint area. However, there was no significant difference between the test groups (P > .05). There was a negative correlation between porosity formation and tensile strength in all the specimens in the test groups (P < .05). CONCLUSION. There was no significant difference in ultimate tensile strength of joints and porosity formations between the gas-oxygen torch soldering and infrared ray soldering technique or between the gap distance of 0.3 mm and 0.5 mm.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.8 s.185
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• pp.171-177
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• 2006

This study was performed as a part of the research on the development of a maskless and electroless process for fabricating metal micro/nanostructures by using a nanoindenter and an electroless deposition technique. $2-{\mu}m$-deep indentation tests on Ni and Cu samples were performed. The elastic recovery of the Ni and Cu was 9.30% and 9.53% of the maximum penetration depth, respectively. The hardness and the elastic modulus were 1.56 GPa and 120 GPa for Ni and 1.51 GPa and 104 GPa for Cu. The effect of single-point diamond machining conditions such as the Berkovich tip orientation (0, 45, and $90^{\circ}$ ) and the normal load (0.1, 0.3, 0.5, 1, 3, and 5 mN), on both the deformation behavior and the morphology of cutting traces (such as width and depth) was investigated by constant-load scratch tests. The tip orientation had a significant influence on the coefficient of friction, which varied from 0.52-0.66 for Ni and from 0.46- 0.61 for Cu. The crisscross-pattern sample showed that the tip orientation strongly affects the surface quality of the machined are a during scratching. A selective deposition of Cu at the pit-like defect on a p-type Si(111) surface was also investigated. Preferential deposition of the Cu occurred at the surface defect sites of silicon wafers, indicating that those defect sites act as active sites for the deposition reaction. The shape of the Cu-deposited area was almost the same as that of the residual stress field.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.93-93
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• 2000

수소화된 비정질 탄소(a-C:H)는 그 증착 조건에 따라서 여러 가지 다른 구조와 특성을 갖게 되며, 특히 DLC(diamond-like carbon) 및 CNT(Carbon nanotube)는 FED (field emission display) 개발 면에서 중요하게 연구되고 있다. 우리는 a-C:H 박막을 PECVD (plasma-enhanced chemical vapor deposition) 방법으로 증착하고 CH4 가스를 사용하였고 기판 온도는 상온-32$0^{\circ}C$ 사이에서 변화되었다. 기판은 Corning 1737 glass, quartz, Si, Ni 등을 사용하였다. 증착 압력과 R.F. power는 각각 0.1-1 Torr 와 12-60w 사이에서 변화되었다. ESR 측정은 X-band(주파수 약 9 GHz)에서 그리고 상온에서 행해졌다. 상온에서의 스핀밀도는 약한-표준피치(weak-pitch standard) 스펙트럼과 비교하여 얻을 수 있었다. 그리고 a-C:H 박막의 구조는 He-Ne laser(파장 632.8 nm)를 이용하는 micro-Raman spectroscopy로 분석하였다. 증착조건에 따른 스핀밀도의 변화 및 Raman 스펙트럼에서의 D-peak, G-peak의 위치 및 반치록, I(D)/I(G) 등을 조사하였다. 증착된 a-C:H 박막은 R.F.power가 증가할수록 대체로 스핀밀도가 증가하였으며, Raman 스펙트럼에서의 I(D)/I(G) 비율은 대체로 감소하였다. 증착된 박막들은 polymer-like Carbon으로 추정되었으며, 스핀밀도가 증가할수록 대체적으로 흑연 구조 영역이 증가됨을 알 수 있었다. 또한 glass나 Si 기판에 비해 Ni 기판위에서 polymer-like Carbon 구조는 향상되는 경향을 보였다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.623-624
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• 2005

Micro injection molding is a branch of micro system technology and has been under development for the mass manufacture of micro parts. Enhanced technological products like micro optical devices are entering the market. This paper presents fundamental research on the injection molding technique in micro fabrication. In order to successful manufacturing of micro plastic parts, it is necessary to research for development of micro-injection machine, machining of micro mold, decision of optimum injection conditions and the research for polymer material. Therefore in this study, in order to machining of micro mold, a mold core with microscopic V-shaped groove was tooled by ultra-precise tooling machine. The transcription experiments with a polymer, PMMA resin on the surface of core with Ni plating were carried out and surface profile of injected parts was measured with AFM.

• Proceedings of the KAIS Fall Conference
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• 2011.05b
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• pp.854-857
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• 2011

육방정프레스 $420{\phi}$를 활용한 고온고압(high pressure high temperature: HPHT) 방법으로 금속촉매층 ($Ni_{77}Fe_{11}Mn_9Co_3$)과 카본디스크가 순차적으로 적층된 셀에 인산칼슘을 첨가함에 따라 합성다이아몬드 성장에 미치는 변화를 확인하였다. HPHT 공정의 압력, 온도, 시간을 각각 8 GPa, $1500^{\circ}C$, 280s로 고정하고, 카본과 금속촉매 층 사이에 인산칼슘을 각각 0, 0.08, 0.20, 0.28 mg씩 첨가하여 고온고압 합성을 수행하였다. 합성공정 후 적층셀의 중간부 셀 수직단면을 광학현미경과 마이크로 라만분광기로 분석하였다. 결과적으로 인산칼슘을 0.08 mg 도포하여 첨가하면 다이아몬드의 생성이 향상되었다. 반면 0.20 mg 이상에서는 도포되는 양이 증가 할수록 다이아몬드 생성이 억제되다가 0.28 mg 이상 첨가에서는 다이아몬드가 거의 생성되지 않는 특징을 보였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1220-1223
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• 2003

A new type electric double layer capacitor (EDLC) was constructed by using carbon nanofibers (CNFs) and DAAQ(1,5-diaminoanthraquinone) electrode. Carbonaceous materials are found in variety forms such as graphite, diamond, carbon fibers etc. While all the carbon nanofibers include impurities such as amorphous carbon, nanoparticles, catalytic metals and incompletely grown carbons. We have eliminated of Ni particles and some carbonaceous particles in nitric acid. Nitric acid treated CNFs could be covered with very thin DAAQ oligomer from the results of CV and TG analyses and SEM images. A crystalline supramolecular oligomer of 1,5-diaminoanthraquinone(DAAQ) was successfully prepared as a thin film by electrochemical oxidation from an acidic non-aqueous medium. DAAQ oligomer film exhibited a specific capacity as 45-50 Ah/kg in 4M $H_2SO_4$. Its electrochemical characteristics were investigated by cyclic voltammetry. And compared with different electrolyte of aqueous type. During ultrasonic irradiation CNFs was to disperse in 0.1M $H_2SO_4$. As a result, CNFs coated by DAAQ composite electrode showed relatively good electrochemical behaviors.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.292-292
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• 2014

Wide band gap semiconductors, such as III-nitrides (GaN, AlN, InN, and their alloys), SiC, and diamond are expected to play an important role in the next-generation electronic devices. Specifically, GaN-based high electron mobility transistors (HEMTs) have been targeted for high power, high frequency, and high temperature operation electronic devices for mobile communication systems, radars, and power electronics because of their high critical breakdown fields, high saturation velocities, and high thermal conductivities. For the stable operation, high power, high frequency and high breakdown voltage and high current density, the fabrication methods have to be optimized with considerable attention. In this study, low ohmic contact resistance and smooth surface morphology to AlGaN/GaN on 2 inch c-plane sapphire substrate has been obtained with stepwise annealing at three different temperatures. The metallization was performed under deposition of a composite metal layer of Ti/Al/Ni/Au with thickness. After multi-layer metal stacking, rapid thermal annealing (RTA) process was applied with stepwise annealing temperature program profile. As results, we obtained a minimum specific contact resistance of $1.6{\times}10^{-7}{\Omega}cm2$.