• Journal of Environmental Science International
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• v.12 no.10
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• pp.1043-1054
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• 2003

During the period from April to September 2002, the size distributions of ambient aerosol were measured at the coastal site at Hamduk in Jeju Island. Na$\^$+/, K$\^$+/, Mg$\^$2+/, Ca$\^$2+/and Cl$\^$-/ exhibited mostly a bimodal coarse mode size distribution, while ammonium and sulfate were mainly in the fine size range, with maximum at around 0.54$\mu\textrm{m}$. The average molar concentration ratio of ammonium to sulfate for fine particles was equal to 2.0${\pm}$0.9. Nitrate was evenly found in both the coarse and fine modes. Elements like Al, Fe, Cu, Mg, Na, Ti, Sr and Mn were dominant in coarse particles, with the maximum at around 5.25$\mu\textrm{m}$. S and Pb were mainly in the submicrometer size range. Other elements with a fine and coarse modes were V, Ni, Cu, Ba and Mo. The patterns of the size distributions of trace elements measured at the downtown in Jeju City were very similar to those at the coastal site in Hamduk. However, the amplitude of size fractional concentrations at Jeju City was narrower than that at Hamduk. While the mass median diameters for the chemical species originated from the natural origin such as marine and crust were relatively large, those for ammonium, sulfate, S and Pb were very small.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.220-220
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• 2008

물 첨가 열화학기상증착을 이용하여 750도에서 길고 수직 성장한 다중벽 탄소나노튜브를 합성하였다. 사용된 기판으로는 우선 실리콘 웨이퍼에 열 증착기로 확산 방지층으로 Ti 50 nm를 입히고 그 위에 Al 15 nm를 입히고 난 후 촉매 층으로 Invar 36 (63 wt% Fe, 37 wt% Ni)을 1 nm 얇게 증착하였다. 탄소나노튜브의 성장에 사용된 가스는 Ar, $C_2H_2$ 이다. Ar은 분위기 가스로 사용되었고, $C_2H_2$는 탄소나노튜브의 성장에 관여하는 가스이다. 또한, 합성중에 약간의 물을 첨가함으로 기존의 탄소나노튜브 성장 길이보다 10배 가량 더 성장 하였다. 이것은 합성 중의 물 첨가로 인해 촉매 입자들의 활동성이 기존에 비해 더 증가했다는 것을 보여준다. 합성된 탄소나노튜브의 길이와 정렬도를 보기 위해 주사전자현미경 (scanning electron microscopy, SEM)을 이용하였고, 탄소나노튜브의 지름과 벽의 개수를 파악하기 위해 투과전자현미경 (transmission electron microscopy)을 이용하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.438-439
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• 2013

Microelectronic devices의 접촉저항의 향상을 위해 Metal silicides의 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 지난 수십년에 걸쳐, Ti silicide, Co silicide, Ni silicide 등에 대한 개발이 이루어져 왔으나, 계속적인 저저항 접촉 소재에 대한 요구에 의해 최근에는 Rare earth silicide에 관한 연구가 시작되고 있다. Rare-earth silicide는 저온에서 silicides를 형성하고, n-type Si과 낮은 schottky barrier contact (~0.3 eV)를 이룬다. 또한, 비교적 낮은 resistivity와 hexagonal AlB2 crystal structure에 의해 Si과 좋은 lattice match를 가져 Si wafer에서 high quality silicide thin film을 성장시킬 수 있다. Rare earth silicides 중에서 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 낮은 schottky barrier 응용에서 쓰이고 있다. 이로 인해, n-channel schottky barrier MOSFETs의 source/drain으로써 주목받고 있다. 특히 ytterbium과 molybdenum co-deposition을 하여 증착할 경우 thin film 형성에 있어 안정적인 morphology를 나타낸다. 또한, ytterbium silicide와 마찬가지로 낮은 면저항과 electric work function을 갖는다. 그러나 ytterbium silicide에 molybdenum을 화합물로써 높은 농도로 포함할 경우 높은 schottky barrier를 형성하고 epitaxial growth를 방해하여 silicide film의 quality 저하를 야기할 수 있다. 본 연구에서는 ytterbium과 molybdenum의 co-deposition에 따른 silicide 형성과 전기적 특성 변화에 대한 자세한 분석을 TEM, 4-probe point 등의 다양한 분석 도구를 이용하여 진행하였다. Ytterbium과 molybdenum을 co-deposition하기 위하여 기판으로 $1{\sim}0{\Omega}{\cdot}cm$의 비저항을 갖는 low doped n-type Si (100) bulk wafer를 사용하였다. Native oxide layer를 제거하기 위해 1%의 hydrofluoric (HF) acid solution에 wafer를 세정하였다. 그리고 고진공에서 RF sputtering 법을 이용하여 Ytterbium과 molybdenum을 동시에 증착하였다. RE metal의 경우 oxygen과 높은 반응성을 가지므로 oxidation을 막기 위해 그 위에 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, 진공 분위기에서 rapid thermal anneal(RTA)을 이용하여 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium silicides를 형성하였다. 전기적 특성 평가를 위한 sheet resistance 측정은 4-point probe를 사용하였고, Mo doped ytterbium silicide와 Si interface의 atomic scale의 미세 구조를 통한 Mo doped ytterbium silicide의 형성 mechanism 분석을 위하여 trasmission electron microscopy (JEM-2100F)를 이용하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.77.1-77.1
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• 2013

Atomic layer deposition (ALD) is known for its self-limiting reaction, which offers atomic-level controllability of the growth of thin films for a wide range of applications. The self-limiting mechanism leads to very useful properties, such as excellent uniformity over a large area and superior conformality on complex structures. These unique features of ALD provide promising opportunities for future electronics. Although the ALD of Al2O3 film (using trimethyl-aluminum and water as a metal precursor and oxygen source, respectively) can be regarded as a representative example of an ideal ALD based on the completely self-limiting reaction, there are many cases deviating from the ideal ALD reaction in recently developed ALD processes. The nonconventional aspects of the ALD reactions may strongly influence the various properties of the functional materials grown by ALD, and the lack of comprehension of these aspects has made ALD difficult to control. In this respect, several dominant factors that complicate ALD reactions, including the types of metal precursors, non-metal precursors (oxygen sources or reducing agents), and substrates, will be discussed in this presentation. Several functional materials for future electronics, such as higher-k dielectrics (TiO2, SrTiO3) for DRAM application, and resistive switching materials (NiO) for RRAM application, will be addressed in this talk. Unwanted supply of oxygen atoms from the substrate or other component oxide to the incoming precursors during the precursor pulse step, and outward diffusion of substrate atoms to the growing film surface even during the steady-state growth influenced the growth, crystal structure, and properties of the various films.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.211-212
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• 2010

GaN 기반의 상부발광형 LED는 동작되는 동안 생기는 전기적 단락, 그리고 칩 위의 p-형 전극과 n-형 전극 사이에 생기는 누설전류 및 신뢰성 확보를 위하여 칩 표면에 passivation 층을 형성하게 된다. SiO2, Si3N4와 같은 passivation layers는 일반적으로 PECVD (Plasma Enhanced Chemical Vapor Deposition)공정을 이용한다, 하지만 이는 공정 특성상 plasma로 인한 damage가 유발되기 때문에 표면 누설 전류가 증가 한다. 이로 인해 forward voltage와 reverse leakage current의 특성이 저하된다. 본 실험에서는 원자층 단위의 박막 증착으로 인해 PECVD보다 단차 피복성이 매우 우수한 PEALD(Plasma Enhanced Atomic Layer Deposition)공정을 이용하여 Al2O3 passivation layer를 증착한 후, 표면 누설전류와 빛의 출력 특성에 대해서 조사해 보았다. PSS (patterned sapphire substrate) 위에 성장된 LED 에피구조를 사용하였고, TCP(Trancformer Copled Plasma)장비를 사용하여 에칭 공정을 진행하였다. 이때 투명전극을 증착하기 위해 e-beam evaporator를 사용하여 Ni/Au를 각각 $50\;{\AA}$씩 증착한 후 오믹 특성을 향상시키기 위하여 $500^{\circ}C$에서 열처리를 해주었다. 그리고 Ti/Au($300/4000{\AA}$) 메탈을 사용하여 p-전극과 n-전극을 형성하였다. Passivation을 하지 않은 경우에는 reverse leakage current가 -5V 에서 $-1.9{\times}10-8$ A 로 측정되었고, SiO2와 Si3N4을 passivation으로 이용한 경우에는 각각 $8.7{\times}10-9$과 $-2.2{\times}10-9$로 측정되었다. Fig. 1 에서 보면 알 수 있듯이 5 nm의 Al2O3 film을 passivation layer로 이용할 경우 passivation을 하지 않은 경우를 제외한 다른 passivation 경우보다 reverse leakage current가 약 2 order ($-3.46{\times}10-11$ A) 정도 낮게 측정되었다. 그 이유는 CVD 공정보다 짧은 ALD의 공정시간과 더 낮은 RF Power로 인해 plasma damage를 덜 입게 되어 나타난 것으로 생각된다. Fig. 2 에서는 Al2O3로 passivation을 한 소자의 forward voltage가 SiO2와 Si3N4로 passivation을 한 소자보다 각각 0.07 V와 0.25 V씩 낮아지는 것을 확인할 수 있었다. 또한 Fig. 3 에서는 Al2O3로 passivation을 한 소자의 output power가 SiO2와 Si3N4로 passivation을 한 소자보다 각각 2.7%와 24.6%씩 증가한 것을 볼 수 있다. Output power가 증가된 원인으로는 향상된 forward voltage 및 reverse에서의 leakage 특성과 공기보다 높은 Al2O3의 굴절률이 광출력 효율을 증가시켰기 때문인 것으로 판단된다.

• Journal of Korean Society for Atmospheric Environment
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• v.28 no.1
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• pp.39-51
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• 2012

Aerosol slurry samples were collected in 60-min interval using Korean Semi-continuous Elements in Aerosol Sampler (KSEAS) between May 19 and June 6, 2010 at an urban site of Gwangju. The $PM_{2.5}$ samples were collected with a flow rate of 16.7 L/min and particles are grown by condensation of water vapor in a condenser maintained at ${\sim}5^{\circ}C$ after saturation by direct injection of steam. The resulting droplets are collected in a liquid slurry with a airdroplet separator. Concentrations of 16 elements (Al, Fe, Mn, Ca, K, Cu, Zn, Pb, Cd, Cr, Ti, V, Ni, Co, As, Se) in the collected slurry samples were determined off-line by ICP-MS. KSEAS sample analysis encompassed the sampling periods for which 24-hr average elemental species concentrations were calculated for comparison with those derived from 24-hr integrated filter samples. Relationship between elemental species measured by two methods indicated high correlation coefficients (r), mostly greater than r of 0.80. However, we note that concentrations of Al, K, Ca, Mn, and Fe, which are often associated with crustal elemental particles, in the KSEAS samples, were substantially lower (1.4~11 times) than those found in the typical filter-based samples. This discrepancy is probably due to difficulties in transferring insoluble dust particles to the collection vials in the KSEAS. Temporal profiles of elemental concentrations indicate that some transient events in their concentrations are observed over the sampling periods. For the elemental species studied, atmospheric concentrations during the transient events increased by factors of 4 in Mn~80 in Zn, compared to their background levels. Principle component analyses were applied to the hourly KSEAS data sets to identify sources affecting the concentrations of the metal constituents observed. In this study, we conclude that hourly measurements for particle-bound elemental constituents were extremely useful for revealing the short-term variability in their concentrations and developing insights into their sources.

• The Bulletin of The Korean Astronomical Society
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• v.36 no.1
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• pp.27.1-27.1
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• 2011

We obtained the spectra of 93 Planet host stars and 73 normal field stars in F, G, K type using BOES at BOAO. We measured the equivalent width of Fe and 25 elements lines using the automatic EW measurement program, TAME(Tools for Automatic Measurement of Equivalent-widths) and estimated the elemental abundances by synth and abfind driver of MOOG code. Since the absence of planets in the normal field stars cannot be "completely" proved, this work focused on the chemical abundances and planet properties of planet host stars, which have the massive planets close to the parent star relatively. We carried out an investigation for the difference of abundances between stars with "Hot Jupiter" and normal field stars with no known planets. We examined the chemical composition of 25 elements, such as C, N, O, S, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Co, Ni, Cu, Zn, Sr, Y, Zr, Ba, Ce, Nd, and Eu by EW measurements, and the S abundances were estimated using synthetic spectrum. We have found that [Mg/Fe] and [Al/Fe] for planet host stars have lower limit comparing with those of comparison stars, and [Ca/Fe] of host star with Neptunian planets is relatively lower than the other host stars with massive planets. We have performed the Kolmogorov-Smirnov test, and examined the ratio of planet host stars to all stars for each bin of [X/H]. As a result, we noted that the O, Si, and Ca abfor undances are strongly related with the presence of planets.

• Journal of Korean Society for Atmospheric Environment
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• v.31 no.3
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• pp.223-238
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• 2015

The $PM_{2.1}$ was collected by LVCI (low volume cascade impactor) during Group-A Period (September 1990 to December 2012) and the $PM_{2.5}$ was collected by HVAS (high volume air sampler) during Group-B Period (September 2009 to April 2012) at Kyung Hee University, Global Campus located on the boarder of Yongin and Suwon. The 8 water-soluble ions ($Na^+$, $NH_4{^+}$, $K^+$, $Mg^{2+}$, $Ca^{2+}$, $Cl^-$, $ NO_3{^-}$, and $SO_4{^{2-}}$) were analyzed by IC, and the 14 inorganic elements (Al, Mn, Si, Fe, Cu, Pb, Cr, Ni, V, Cd, Ba, Zn, Ti, Ag) were analyzed by XRF and ICP-AES after performing proper pre-treatments of each sample filter. The average total mass fractions of $SO_4{^{2-}}$, $NO_3{^-}$, and $NH_4{^+}$+ to $PM_{2.5}$ samples during Group-B Period were 0.39 in normal days, 0.44 in haze days, and 0.27 in Asian dust days, respectively; however, the average total mass fractions of Al, Fe, and Si to $PM_{2.5}$ mass were 0.043 in normal days, 0.021 in haze days, and 0.036 in Asian dust days, respectively. Especially the concentration of Pb was significantly decreased during Group-B Period rather than during Group-A Period, while Cr and Ni was increased during Group-B Period. In this study, we intensively compared the annual and seasonal patterns of major chemical species among normal days, haze days, and Asian dust days. Further we developed mass fraction profiles by collecting episode cases of haze days and Asian dust days, which were consisting of 22 chemical species. Those profiles are considered to be useful when applying various receptor models and establishing air quality management plans near future.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.92-92
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• 2014

Recently, many state-of-art spectroscopy techniques are used to unravel the mysteries of condensed matters. And numerous heterostructures have provided a new avenue to search for new emergent phenomena. Especially, near the interface, various forms of symmetry-breaking can appear, which induces many novel phenomena. Although these intriguing phenomena can be emerged at the interface, by using conventional measurement techniques, the experimental investigations have been limited due to the buried nature of interface. One of the ways to overcome this limitation is in situ investigation of the layer-by-layer evolution of the electronic structure with increasing of the thickness. Namely, with very thin layer, we can measure the electronic structure strongly affected by the interface effect, but with thick layer, the bulk property becomes strong. Angle-resolved photoemission spectroscopy (ARPES) is powerful tool to directly obtain electronic structure, and it is very surface sensitive. Thus, the layer-by-layer evolution of the electronic structure in oxide heterostructure can be investigated by using in situ ARPES. LaNiO3 (LNO) heterostructures have recently attracted much attention due to theoretical predictions for many intriguing quantum phenomena. The theories suggest that, by tuning external parameters such as misfit strain and dimensionality in LNO heterostructure, the latent orders, which is absent in bulk, including charge disproportionation, spin-density-wave order and Mott insulator, could be emerged in LNO heterostructure. Here, we performed in situ ARPES studies on LNO films with varying the misfit strain and thickness. (1) By using LaAlO3 (-1.3%), NdGaO3 (+0.3%), and SrTiO3 (+1.7%) substrates, we could obtain LNO films under compressive strain, nearly strain-free, and tensile strain, respectively. As strain state changes from compressive to tensile, the Ni eg bands are rearranged and cross the Fermi level, which induces a change of Fermi surface (FS) topology. Additionally, two different FS superstructures are observed depending on strain states, which are attributed to signatures of latent charge and spin orderings in LNO films. (2) We also deposited LNO ultrathin films under tensile strain with thickness between 1 and 10 unit-cells. We found that the Fermi surface nesting effect becomes strong in two-dimensions and significantly enhances spin-density-wave order. The further details are discussed more in presentation. This work was collaborated with Hyang Keun Yoo, Seung Ill Hyun, Eli Rotenberg, Ji Hoon Shim, Young Jun Chang and Hyeong-Do Kim.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.43-43
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• 2009

단련용 다결정 Ni기 초내열합금은 우수한 가공성, 내산화성, 고온특성 등으로 가스터빈 연소기, 디스크, 증기발생기 전열관 등 발전용 고온부품 소재에 널리 적용되고 있다. 최근 발전설비의 고효율화를 꾀하기 위해 작동 온도를 현격히 증가시키는 기술방향으로 발전하고 있고, 소재측면에서는 기존의 초내열합금 대비 고기능성을 확보할 수 있는 차세대 Ni기 초내열합금 개발이 유럽, 미국, 일본, 중국 등을 중심으로 활발히 이루어지고 있다. 이러한 소재의 고온강도 (온도수용성)를 향상시키기 위해서는 통상 규칙격자 금속간화합물인 $Ni_3(Al,Ti)-{\gamma}'$상의 분율을 증가시킬 수 있지만, ${\gamma}'$상분율이 증가할 경우 용접 및 후열처리 동안 용접열영향부 (HAZ)에서 액화균열이 발생할 가능성이 높아진다. 결정립계를 따라 발생하는 HAZ 액화균열은 입계특성에 의해 크게 영향을 받을 것으로 판단된다. 한편, 본 연구자들은 최근 입계 serration 현상을 단련용 합금에 도입시키는 특별한 열처리를 이론적 접근법을 통해 개발하였다. 형성된 파형입계는 결정학적인 관점에서 조밀 {111} 입계면을 갖도록 분해 (dissociation)되어 낮은 계면에너지를 갖게 됨을 확인하였으며, 입계형상 변화뿐만 아니라 탄화물 특성변화까지 유도하여 크리프 수명을 기존대비 약 40% 정도 향상시킴을 확인하였다. 이러한 직선형 입계 대비 'special boundary'로 간주되는 파형입계가 도입될 경우, HAZ 결정립크기 변화 및 액화거동에 미치는 영향을 고찰하고, 아울러 입계특성 제어가 용접성/용접부 품질 향상에 기여할 수 있는 가능성도 토의하고자 하였다. 본 연구에서는 재현 HAZ 열사이클 시험을 통해 미세구조를 정량적으로 비교하였다. 상대적으로 입계구조가 안정된 파형입계의 이동속도가 高계면 에너지를 갖는 직선형 입계보다 느려 HAZ 결정립 성장이 효과적으로 억제됨을 확인할 수 있었다. 입계 액화거동을 살펴보면, 두 시편 모두 $M_{23}C_6$, MC 등 입계탄화물 계면이 빠른 승온중 액화반응 (constitutional liquation)에 의해 입계가 액화되었으며, 이후 급냉에 의해 입계에 액상막이 존재한 흔적이 발견되었다. 최고온도별로 입계액화 폭/비율을 정량적으로 비교한 결과, 파형입계가 직선입계 대비 대체로 낮음을 확인할 수 있었으며, 때때로 액화되지 않고 잔존하는 입계 탄화물이 관찰되었다. 재현 HAZ 미세조직을 통해 Hot ductility 시험 결과를 유추하자면, 파형입계가 직선입계 보다 좁은 취성온도영역 (Brittle Temperature Range)을 나타낼 것으로 예상되어, 입계특성제어에 의해 Ni기 초내열합금의 용접성을 향상 가능성을 확인하였다.