• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.251-254
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• 2001

This paper describes an efficiency improvement of buried contact solar cell (BSCS) with a structure of MgF$_2$/CeO$_2$/Ag/Cu/Ni grid/n$^{+}$ emitter/p-type Si base/p$^{+}$/Al. Theoretical and experimental investigations were performed on a double layer antireflection (DLAR) coating of MgF$_2$/CeO$_2$. We investigated CeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. An optimized DLAR coating shewed a reflectance as low as 2.04 % in the wavelengths ranged from 0.4 ${\mu}{\textrm}{m}$ to 1.1 ${\mu}{\textrm}{m}$. BCSC cell efficiency was improved from 16.2 % without any AR coating to 19.9 % by employing DLAR coatings. Further details on MgF$_2$/CeO$_2$ DLAR coatings on the BCSC cells are presented in this paper.per.

• Korean Journal of Materials Research
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• v.13 no.4
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• pp.233-238
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• 2003

Ferromagnetic tunnel junctions, Ta/Cu/Ta/NiFe/Cu/$Mn_{75}$ $Ir_{25}$ $Co_{70}$ $Fe_{30}$/Al-oxide, were fabricated by do magnetron sputtering and plasma oxidation process. The effect of annealing temperature on the local transport properties of the ferromagnetic tunnel junctions was studied using contact-mode Atomic Force Microscopy (AFM). The current images reflected the distribution of the barrier height determined by local I-V analysis. The contrast of the current image became more homogeneous and smooth after annealing at $280^{\circ}C$. And the average barrier height $\phi_{ave}$ increased and its standard deviation $\sigma_{\phi}$ X decreased. For the cases of the annealing temperature more than $300^{\circ}C$, the contrast of the current image became large again. And the average barrier height $\phi_{ave}$ decreased and its standard deviation $\sigma_{\phi}$ increased. Also, the current histogram had a long tail in the high current region and became asymmetric. This result means the generation of the leakage current that is resulted from the local generation of a low barrier height region. In order to obtain the high tunnel magnetoresistance(TMR) ratio, the increase of the average barrier height and the decrease of the barrier height fluctuation must be strictly controlled.led.

• Journal of Welding and Joining
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• v.18 no.6
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• pp.74-82
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• 2000

The fluxless wetting properties of UBM-coated Si-wafer to the binary lead-free solders(Sn-Ag, Sn-Sb, Sjn-In, Sn0Bi) were estimated by wetting balance method. With the new wettability indices from the wetting curves of one side coated specimen, the wetting property estimation of UBM-coated Si-wafer was possible. For UBM of Si-chip, Au/Cu/Cr UBm was better than au/Ni/TI in the point of wetting time/ At general reflow process temperature, the wettability of high melting point solders(Sn-Sb, Sn-Ag) was better than that of low melting point one(Sn-Bi, Sn-In). The contact angle of the one side coated Si-plate to the solder could be calculated from the force balance equation by measuring the static state force and the tilt angle.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.166-168
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• 2007

스퍼터링법으로 제작된 FCCL은 PI필름(Poly-imide film)과 Cu layer사이에 Tie-coating layer로 Ni-Cr을 많이 사용한다. 하지만 완성된 FCCL에서 페터닝을 실시할 때 Cr성분이 소멸되지 않고 잔존하는 현상으로 누설전류가 발생 한다. 또한 Cr으로 인해 Eatching액의 오염으로 재사용의 어려움도 발생된다. 이러한 원인들은 제품의 특성들을 저하 시키므로 이를 개선할 필요가 있다. 따라서 본 연구에서는 기존의 Tie-coating layer를 대체할 물질로 Acrylic acid를 이용하여 FCCL을 제작하여 표면특성 평가를 위해 Contact angle측정과 부착력을 위한 Peel test측정과 조직분석 및 성분분석을 위해 SEM-EDS를 측정을 통하여 Polymerization을 이용한 Ti-coating layer 개발의 가능성을 확인하였다.

• Journal of the Korean Magnetics Society
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• v.14 no.6
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• pp.236-239
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• 2004

We studied the specular spin valve (SSV) having the spin filter layer (SFL) in contact with the ultrathin free layer composed of Ta3/NiFe2/IrMn7/CoFel/(NOLl)/CoFe2/Cu1.8/CoFe( $t_{F}$)/Cu( $t_{SF}$ )/(NOL2)/Ta3.5 (in nm) by the magnetron sputtering system. For this antiferromagnetic I $r_{22}$M $n_{78}$-pinned spin filter specular spin valve (SFSSV) films, an optimal magnetoresistance (MR) ratio of 11.9% was obtained when both the free layer thickness ( $t_{F}$) and the SFL thickness ( $t_{SF}$ ) were 1.5 nm, and the MR ratio higher than 11% was maintained even when the $t_{F}$ was reduced to 1.0 nm. It was due to increase of specular electron by the nano-oxide layer (NOL) and of current shunting through the SFL. Moreover, the interlayer coupling field ( $H_{int}$) between free layer and pinned layer could be explained by considering the RKKY and magnetostatic coupling. The coercivity of the free layer ( $H_{cf}$ ) was significantly reduced as compared to the traditional spin valve (TSV), and was remained as low as 4 Oe when the $t_{F}$ varied from 1 nm to 4 urn. It was found that the SFL made it possible to reduce the free layer thickness and enhance the MR ratio without degrading the soft magnetic property of the free layer.

• Journal of Microbiology and Biotechnology
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• v.33 no.7
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• pp.895-908
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• 2023

Disposal of waste containing heavy metals into the environment is a major threat to human health and can result in toxic or chronic poisoning in aquatic life. In the current study, metal-resistant Raoultella ornithinolytica was isolated from metal-contaminated samples collected from the Tanjaro River, located southwest of Sulaymaniyah, Iraq. R. ornithinolytica was identified by partial amplification of 16S rRNA. The uptake potency of heavy metals was assessed using inductively coupled plasma-optical emission spectroscopy (ICP-OES) and indicated that R. ornithinolytica removed 67, 89, 63.4, 55.6, 56.5, 65, and 61.9% of Cd, Pb, Cr, Ni, Zn, Co, and Fe, respectively. These removal rates were influenced by temperature, pH, and contact time; at 35℃ and pH 5 with a change in the incubation time, the reduction rate improved from 89 to 95% for Pb, from 36.4 to 45% for Cu, and from 55.6 to 64% for Ni. Gene analysis indicated that R. ornithinolytica contained pbrT, chrB, nccA, iroN, and czcA genes, but the pcoD gene was absent. Energy-dispersive X-ray spectroscopy (EDS) images showed evidence of metal ion binding on the cell wall surface with different rates of binding. Transmission electron microscopy (TEM) detected different mechanisms for metal particle localization; cell surface adsorption was the main mechanism for Pb, Zn, and Co uptake, while Cd, Ni, and Fe were accumulated inside the cell. The current study describes, for the first time, the isolation of R. ornithinolytica from metal-contaminated water, which can be used as an eco-friendly biological expedient for the remediation and detoxification of metals from contaminated environments.

• Journal of the Korean Wood Science and Technology
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• v.33 no.6 s.134
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• pp.87-94
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• 2005

This study was carried out to investigate the effect of soil types and soil properties on wood preservative leaching. Radiata pine (Pinus radiata Don.) sapwood stakes, which had been treated with 2.0%(w/v) CCA, were leached for 12 weeks by a common laboratory method in four different soils and for 14 days by the AWPA standard leaching method in water. The physical and chemical properties of the four soils were determined, and the percent leaching of the individual component of CCA was correlated with the various soil properties. The data show that leaching of preservative chemicals from treated wood exposed to soil is influenced by the type of soil. The preservative leaching was greater when wood was exposed to water than when the wood was in contact with water-saturated soil. The greatest chromium, copper and arsenic leaching from CCA-treated stakes were observed in the sandy loam, loam, and sand, respectively, and the least amount of leaching of CCA components occurred in the silty loam. The leaching of preservative components from treated wood is extremely complex and appears to be influenced differently by the soil properties. The extent of copper leaching from CCA treated wood appears to be related to exchangeable Mg and sum of bases. There is a reasonably good relationship between chromium leaching and exchangeable Mg, and between arsenic leaching and exchangeable K, soil Ni, Mn, Fe, Cr, or Cu content. Since this study was conducted based on laboratory leaching method using small cross-sectional dimensions; thus, data obtained from this experiment should not be used to predict leaching characteristics from commercial-size wood used in real situation. Accordingly, further studies are necessary using outdoor ground-contact leaching.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.88-97
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• 1996

The metallization is the key to determining cell costs, cell performance, and system reliability. Screen printing technology suffers from several limitations affecting mainly the front grid. The buried contact solar cell (BCSC) was specifically desinged to be compatible with low cost, mass production techniques and avoid the conventional metallization problem. By using electroless plating technique, we performed this metallization inexpensively and reliably. This paper presents the details of the optimization procedure of metallization schemes on laser grooved cell surfaces. Commercially available Ni, Cu and Ag plating solutions were applied for the cell metallization. The application of those solutions on the buried contact front metallization has resulted in an cell efficiency of 18.8%. The cell parameters are an open circuit voltage of 651 mV, short circuit current density of 37.1 mA/$\textrm{cm}^2$, and fill factor of 77.8 %. The efficiency of over 18 % was achieved in the above 90% of the batch.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.413-417
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• 2023

Gallium Oxide (Ga₂O₃) is preferred as a material for next generation power semiconductors. The Ga₂O₃ should solve the disadvantages of low thermal resistance characteristics and difficulty in forming an inversion layer through p-type ion implantation. However, Ga₂O₃ is difficult to inject p-type ions, so it is being studied in a heterojunction structure using p-type oxides, such as NiO, SnO, and Cu₂O. Research the lateral-type FET structure of NiO/Ga₂O₃ heterojunction under the Gate contact using the Sentaurus TCAD simulation. At this time, the VG-ID and VD-ID curves were identified by the thickness of the Epi-region (channel) and the doping concentration of NiO of 1×10¹⁷ to 1×10¹⁹ cm-3. The increase in Epi region thickness has a lower threshold voltage from -4.4 V to -9.3 V at I_D = 1×10^-8 mA/mm, as current does not flow only when the depletion of the PN junction extends to the Epi/Sub interface. As an increase of NiO doping concentration, increases the depletion area in Ga₂O₃ region and a high electric field distribution on PN junction, and thus the breakdown voltage increases from 512 V to 636 V at I_D =1×10^-3 A/mm.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.74-79
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• 2000

In an attempt to estimate the wetting properties of wettable metal layers by wetting balance method, an analysis of wetting curves of the coating layer was performed. Based on the analysis, wetting properties of UBM-coated Si-plate were estimated by the new wettability indices. The wetting curves of the one and both sides-coated UBM layers have the similar shape and show the similar tendency to the temperature. So the wetting property estimation of one side coating is possible with wetting balance method. For UBM of Si-chip, Cr/Cu/Au UBM is better than Ti/Ni/Au in the point of wetting time. At general reflow temperature, the wettability of high melting point solders(Sn-Sb, Sn-Ag) is better than that of few melting point ones(Sn-Bi, Sn-In).The contact angle of the one side coated plate to the solder can be calculated from the farce balance equation by measuring the static state force and the tilt angle.