• International Journal of Internet, Broadcasting and Communication
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• 제10권4호
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• pp.6-11
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• 2018

As embedded memory technology evolves, the traditional Static Random Access Memory (SRAM) technology has reached the end of development. For deepening the manufacturing process technology, the next generation memory technology is highly required because of the exponentially increasing leakage current of SRAM. Non-volatile memories such as STT-MRAM (Spin Torque Transfer Magnetic Random Access Memory), PCM (Phase Change Memory) are good candidates for replacing SRAM technology in embedded memory systems. They have many advanced characteristics in the perspective of power consumption, leakage power, size (density) and latency. Nonetheless, nonvolatile memories have two major problems that hinder their use it the next-generation memory. First, the lifetime of the nonvolatile memory cell is limited by the number of write operations. Next, the write operation consumes more latency and power than the same size of the read operation.These disadvantages can be solved using the compiler. The disadvantage of non-volatile memory is in write operations. Therefore, when the compiler decides the layout of the data, it is solved by optimizing the write operation to allocate a lot of data to the SRAM. This study provides insights into how these compiler and architectural designs can be developed.

• 정보과학회지
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• 제27권5호
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• pp.47-57
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• 2009

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.192.1-192.1
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• 2015

We demonstrated the nonvolatile memory functionality of nano-crystalline silicon (nc-Si) and InGaZnOxide (IGZO) thin film transistors (TFTs) using mobile protons that are generated by very short time hydrogen neutral beam (H-NB) treatment in gate insulator (SiO2). The whole memory fabrication process kept under $50^{\circ}C$ (except SiO2 deposition process; $300^{\circ}C$). These devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. We also executed hydrogen treatment in order to figure out the difference of mobile proton generation between PECVD and H-NB CVD that we modified. Our study will further provide a vision of creating memory functionality and incorporating proton-based storage elements onto a probability of next generation flexible memorable electronics such as low power consumption flexible display panel.

• 한국IT서비스학회지
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• 제18권1호
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• pp.79-90
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• 2019

Maximizing energy efficiency minimizes the energy consumption of computation, storage and communications required for IT services, resulting in economic and environmental benefits. Recent advancement of flash and next generation non-volatile memory technology and price decrease of those memories have led to the rise of so-called AFA (All-Flash Array) storage devices made of flash or next generation non-volatile memory. Currently, the AFA devices are rapidly replacing traditional storages in the high-performance servers due to their fast input/output characteristics. However, it is not well known how effective the energy efficiency of the AFA devices in the real world. This paper shows input/output performance and power consumption of the AFA devices measured on the Linux XFS file system via experiments and discusses energy efficiency of the AFA devices in the real world.

• 대한임베디드공학회논문지
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• 제13권3호
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• pp.125-131
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• 2018

STT-RAM is attracting as a next generation Non-volatile memory for replacing cache memory with low leakage energy, high integration and memory access performance similar to SRAM. However, there is problem of write operations as the other Non_volatile memory. Hybrid cache memory using SRAM and STT-RAM is attracting attention as a cache memory structure with lowe power consumption. Despite this, reducing the leakage energy consumption by the STT-RAM is still lacking access to the Dynamic energy. In this paper, we proposed as energy management method such as a way-selection approach for hybrid L2 cache fo SRAM and STT-RAM and memory selection method of write/read operation. According to the simulation results, the proposed hybrid cache memory reduced the average energy consumption by 40% on SPEC CPU 2006, compared with SRAM cache memory.

• 반도체디스플레이기술학회지
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• 제19권3호
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• pp.61-67
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• 2020

This paper is to propose a hybrid memory adaptor using next-generation nonvolatile memory devices such as phase-change memory to improve the performance limitations of OpenStack-based object storage systems. The proposed system aims to improve the performance of the account and container servers for object metadata management. For this, the proposed system consists of locality-based dynamic page buffer, write buffer, and nonvolatile memory modules. Experimental results show that the proposed system improves the hit rate by 5.5% compared to the conventional system.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.103-104
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• 2006

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the reset current and temperature profile of PRAM cells with bottom electrode were calculated by the numerical method.

• 정보과학회 논문지
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• 제42권2호
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• pp.183-189
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• 2015

최근 DRAM 기반의 메인 메모리 기술 발전이 한계에 봉착함에 따라 컴퓨터 시스템의 진보에도 어려움이 발생하고 있다. 이를 개선하기 위해 집적도가 높고 비휘발성을 갖는 차세대 메모리 기술이 등장하고 있으나 이들은 쓰기 속도가 느리거나 쓰기 횟수에 제한이 있는 등, 메인 메모리로 사용하기에는 아직 무리가 있다. 본 논문에서는 여러 차세대 메모리 기술들의 장점들을 조합하여 활용하는 하이브리드 메인 메모리 시스템, 즉 HyMN을 제안한다. HyMN은 차세대 메모리 기술을 쓰기적합램과 읽기적합램으로 분류하여 메인 메모리 시스템을 구성함으로써, 내구성이 양호하고, 고용량화가 용이하며, 비휘발성을 활용할 수 있는 시스템을 구현한다. 본 논문에서는 또한, 쓰기적합램이 어느 정도의 크기로 구성되어야 하는지를 보이고 정전 시 손실에 대한 복구비용이 없거나 미미한 HyMN이 일상적으로 프로세스를 실행할 때 실행 시간 성능이 DRAM으로만 구성된 시스템에 비하여 유사함을 검증한다.

• 한국정보과학회논문지:시스템및이론
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• 제37권1호
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• pp.19-26
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• 2010

본 논문에서는 차세대 비휘발성램 기술인 스토리지 클래스 메모리(SCM)와 DRAM을 병렬적으로 메인 메모리로서 도입하고, SCM+DRAM 메인 메모리 시스템을 시스템 신뢰성 측면에서 활용한다. 본 시스템에서는 부팅 없는 즉각적인 시스템 온/오프, 프로세스의 동적인 영속성 또는 비영속성의 선택, 그리고 이를 통하여 전원과 소프트웨어 장애로부터의 빠른 복구를 제공한다. 본 논문에서 제안하는 시스템의 장점은 체크포인팅에서의 문제들, 즉 심각한 오버헤드와 복구 지연을 야기하지 않으며, 특히 응용 프로그램에 대한 완전한 투명성을 제공하기 때문에 보편적인 응용 프로그램에 영속성을 제공할 수 있어 실제 환경에 적용되기가 쉽다. 우리는 이를 검증하기 위해 상용 운영체제인 리눅스 커널 2.6.21을 기반으로 시스템을 구현하였고, 실험을 통해 영속성이 지정된 프로세스가 시스템의 오프-온 후 데이터 손실 없이 즉각적으로 실행을 지속하는 것을 알 수 있었으며, 이를 통하여 우리는 본 시스템에서 가용성과 신뢰성이 향상될 수 있음을 확인하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.28.2-28.2
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• 2011

Resistance random access memory (ReRAM) is a promising candidate for next-generation nonvolatile memory because of its advantageous qualities such as simple structure, superior scalability, fast switching speed, low-power operation, and nondestructive readout. We investigated the resistive switching behavior of tantalum oxide that has been widely used in dynamic random access memories (DRAM) in the present semiconductor industry. As a result, it possesses full compatibility with the entrenched complementary metal-oxide-semiconductor processes. According to previous studies, TiN is a good oxygen reservoir. The TiN top electrode possesses the specific properties to control and modulate oxygen ion reproductively, which results in excellent resistive switching characteristics. This study presents fully room temperature fabricated the TiN/$TaO_x$/Pt devices and their electrical properties for nonvolatile memory application. In addition, we investigated the TiN electrode dependence of the electrical properties in $TaO_x$ memory devices. The devices exhibited a low operation voltage of 0.6 V as well as good endurance up to $10^5$ cycles. Moreover, the benefits of high devise yield multilevel storage possibility make them promising in the next generation nonvolatile memory applications.