• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.05a
• /
• pp.94-97
• /
• 2004

In this paper, we investigate fringe-field switching (FFS) mode cell by the ion beam (IB) alignment method on the a-C:H thin film, to analyze electro-optical characteristics in this cell. We studied on the suitable inorganic thin film for fringe-field switching (FFS) cell and the aligning capabilities of nematic liquid crystal (NLC) using the new alignment material of a-C:H thin film An excellent voltage-transmittance (V-T) and response time curve of the IB-aligned FFS-LCD was observed with oblique IB exposure on the DLC thin films. Also, AC V-T hysteresis characteristics of the IB-aligned FFS-LCD with IB exposure on the DLC thin films is almost the same as that of the rubbing-aligned FFS cell on a polyimide (PI) surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.530-533
• /
• 2002

Blending effects for generating a pretilt angle in nematic liquid crystal (NLC) with negative dielectric anisotropy on the blended polyimide (PI) of homeotropic and homogeneous alignment surface were studied. Also, we investigated the EO performances for the advanced VA-$\pi$ cell using this homeotropic blended PI surface. A many decrease of tilt angle on the polymer surface to blend homeotropic PI and homogeneous PI with side chain type was measured, and the tilt angle decreased as blended ratio and rubbing strength increase. The blended effects for generating a pretilt angle were clearly observed, and the many decrease of tilt angle can be achieved by using the blended PI surface. The electro-optical (EO) characteristics using the advanced VA-$\pi$ cell using the homeotropic blended PI surface than that of conventional VA cell can be improved. We suggest that the developed advanced VA-$\pi$ cell on a homeotropic blended PI surface is a promising technique for the achievement of a fast response time, and a high contrast ratio.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.9
• /
• pp.826-832
• /
• 2003

Blending effects for generating a pretilt angle in nematic liquid crystal (NLC) with negative dielectric anisotropy on the blended polyimide (PI) of homeotropic and homogeneous alignment surface were studied. Also, we investigated the EO performances for the advanced VA- $\pi$ cell using this homeotropic blended PI surface. A many decrease of tilt angle on the polymer surface to blend homeotropic PI and homogeneous PI with side chain type was measured, and the tilt angle decreased as blended ratio and rubbing strength increase. However, a small decrease of tilt angle on the polymer surface to blend homeotropic PI and homogeneous PI with main chain type was measured. The blended effects for generating a pretilt angle were clearly observed, and the many decrease of tilt angle can be achieved by using the blended PI surface. The electro-optical (EO) characteristics using the advanced VA- $\pi$ cell using the homeotropic blended PI surface than that of conventional VA cell can be improved. We suggest that the developed advanced VA-$\pi$ cell on a homeotropic blended PI surface is a promising technique for the achievement of a fast response time, and a high contrast ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.04a
• /
• pp.89-90
• /
• 2006

Electro-optical (EO) characteristics of in-plane switching (IPS) cell on the polyimide surface using obliquely ion beam (IB) exposure as new ion beam (IB) type system (DuoPIGatrion ion source). A good uniform alignment of the nematic liquid crystal (NLC) alignment with the ion beam exposure on the polyimide surface was observed. In addition, it can be achieved the good EO properties of the ion-beam-aligned IPS-cell on poly imide surface ; the stable VT curve in the ion-beam-aligned IPS cell on a poly imide (PI) surface with ion beam exposure using new type IB equipment was obtained. and the fast response time in the ion-beam-aligned IPS cell on a polyimide (PI) surface with ion beam exposure using new type IB equipment was obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.04a
• /
• pp.64-65
• /
• 2006

We studied the nematic liquid crystal (NLC) alignment capability by the IB(on bean) alignment method on a NDLC(Nitrogen Diamond Like Carbon) as a-C:H thin film, and investigated electro-optical performances of the IB aligned IPS(In plane switching}cell with NDLC surface. A good LC alignment by IB exposure on a NDLC surface was achieved. Monodomain alignment of the IB aligned IPS cell can be observed. The goodelectro-optical (EO) characteristics of the IB aligned IPS cell was observed with oblique IB exposure on the NDLC as a-C:H thin film for 1 min.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.430-430
• /
• 2007

In this study, the nematic liquid crystal (NLC) alignment effects treated on the ZnO thin film layers using ion beam irradiation were successfully studied for the first time. The ZnO thin films were deposited on indium-tin-oxide (ITO) coated glass substrates by rf-sputter and The ZnO thin films were deposited at the three kinds of rf power. The used DuoPIGatron type ion beam system, which can be advantageous in a large area with high density plasma generation. The ion beam parameters were as follows: energy of 1800 eV, exposure time of 1 min and ion beam current of $4\;mA/cm^2$ at exposure angles of $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, and $60^{\circ}$. The homogeneous and homeotropic LC aligning capabilities treated on the ZnO thin film surface with ion beam exposure of $45^{\circ}$ for 1 min can be achieved. The low pretilt angle for a NLC treated on the ZnO thin film surface with ion beam irradiation for all incident angles was measured. The good LC alignment treated on the ZnO thin film with ion beam exposure at rf power of 150 W can be measure. For identifying surfaces topography of the ZnO thin films, atomic force microscopy (AFM) was introduced. After ion beam irradiation, test samples were fabricated in an anti-parallel configuration with a cell gap of $60{\mu}m$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.10
• /
• pp.1100-1106
• /
• 2004

In this paper, we intend to make fringe-field switching (FFS) mode cell by the ion beam (IB) alignment method on the a-C：H thin film, to analyze electro-optical characteristics in this cell. We studied on the suitable inorganic thin film for fringe-field switching (FFS) cell and the aligning capabilities of nematic liquid crystal (NLC) using the alignment material of a-C：H thin film as working gas at 30 W rf bias condition. A high pretilt angle of about 5 $^{\circ}C$ by ion beam (IB) exposure on the a-C：H thin film surface was measured. Consequently, the high pretilt angle and the good thermal stability of LC alignment by the IB alignment method on the a-C：H thin film surface as working gas at 30 W rf bias condition can be achieved. An excellent voltage-transmittance (V -T) and response time curve of the IE-aligned FFS-LCD was observed with oblique IB exposure on the a-C：H thin films. Also, AC V-T hysteresis characteristics of the IB-aligned FFS-LCD with IE exposure on the a-C：H thin films is almost the same as that of the rubbing-aligned FFS cell on a polyimide (PI) surface.