• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.4
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• pp.324-329
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• 2000

We investigated the effect of hydrogen ion beam on the formation of DLC thin film, which is deposited on the Si substrate with negative carbon ion by $Cs^+$ ion sputtering and positive hydrogen ion by Kauffmann type ion source. The amount of hydrogen in the DLC films increased as increasing hydrogen gas flow rate from 0 sccm to 12 sccm. As increasing hydrogen flow rate, $sp^2$bonding structure increased. The reason is that the hydrogen ions have relatively high energy, although total amount of hydrogen is very small compared with that of CVD process. These results suggest that the physical energy transfer plays a dominant role on the formation of DLC film.

• Korean Journal of Materials Research
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• v.10 no.7
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• pp.459-463
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• 2000

Direct use of negative ions for modification of materials has opened new research such as charging-free ion implantation and new materials syntheses by pure kinetic bonding reactions. For these purposes, a new solid-state ce-sium ion source has been developed in the laboratory scale. In this paper, diamond like carbon(DLC) films were prepared on silicon wafer by a negative cesium ion gun. This system does not need any gas in the chamber; deposition occurs under high vacuum. The ion source has good control of the C- beam energy(from 80 to 150eV). The result of Raman spectrophotometer shows that the degree of diamond-like character in the films, $sp^3$ fraction, increased as ion beam energy increases. The nanoindentation hardness of the films also increases from 7 to 14 GPa as a function of beam energy. DLC films showed ultra-smooth surface(Ra~1$\AA$)and an impurity-free quality.

• Bulletin of the Korean Chemical Society
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• v.24 no.8
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• pp.1163-1168
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• 2003

The structures of molecular species of galactolipids, such as monogalactosyl diacylglycerol (MGDG) and digalactosyl diacylglycerol (DGDG), isolated from wheat flour have been investigated using negative-ion electrospray ionization (ESI) mass spectrometry interfaced with high performance liquid chromatography (HPLC). According to the result of HPLC analysis, MGDG and DGDG were found to consist of mixtures of five and four molecular species, respectively. The galactolipids have been also analyzed to determine their fatty acid compositions, using HPLC/ESI-MS combined with in-source (or cone voltage) fragmentation. HPLC/ ESI-MS is very useful for one-step analysis of mixtures of galactolipids with a small sample quantity. Especially, the carboxylate anions produced in in-source fragmentations of the negative-ion of each component separated by HPLC provide valuable information on the composition of its fatty acyl chains.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.220-220
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• 1999

In plasma source ion implantation, the target is immersed in the plasma and repetitively biased by negative high voltage pulses to implant the extracted ions from plasma into the surface of the target material. In this way, the problems of line-of-sight implantation in ion-beam ion implantation technique can be effectively solved. In addition, the high dose rate and simplicity of the equipment enable the ion implantation a commercially affordable process. In this work, plasma source ion implantation technique was used to improve the wear resistance of Co-cemented WC. which has been extensively used for high speed tools. Nitrogen and carbon ions were implanted using the pulse bias of -602kV, 25 sec and at various implantation conditions. The implanted samples were examined using scanning Auger electron spectroscopy and XPS to investigate the depth distributions of implanted ions and to reveal the chemical state change due to the ion implantation. The implanted ions were found to have penetrated to the depth of 3000$\AA$. The wear resistance of the implanted samples was measured using pin-on-disc wear tester and the wear tracks were examined with alpha-step profilometer.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.180-180
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• 2000

Plasma source ion implantation is a new doping technique for the formation of shallow junction with the merits of high dose rate, low-cost and minimal wafer charging damage. In plasma source ion implantation process, the wafer is placed directly in the plasma of the appropriate dopant ions. Negative pulse bias is applied to the wafer, causing the dopant ions to be accelerated toward the wafer and implanted below the surface. In this work, inductively couples plasma was generated by anodized Al antenna that was located inside the vacuum chamber. The outside wall of Al chamber was surrounded by Nd-Fe-B permanent magnets to confine the plasma and to enhance the uniformity. Before implantation, the wafer was pre-sputtered using DC bias of 300B in Ar plasma in order to eliminate the native oxide. After cleaning, B2H6 (5%)/H2 plasma and negative pulse bias of -1kV to 5 kV were used to form shallow p+/n junction at the boron dose of 1$\times$1015 to 5$\times$1016 #/cm2. The as-implanted samples were annealed at 90$0^{\circ}C$, 95$0^{\circ}C$ and 100$0^{\circ}C$during various annealing time with rapid thermal process. After annealing, the sheet resistance and the junction depth were measured with four point probe and secondary ion mass spectroscopy, respectively. The doping uniformity was also investigated. In addition, the electrical characteristics were measured for Schottky diode with a current-voltage meter.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.173-176
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• 1997

Direct metal ion beam deposition is considered to be a whole new thin film deposition technique. Unlike other conventional thin film deposition processes, the individual deposition particles carry its own ion beam energies which are directly coupled for the formation of this films. Due to the nature of ion beams, the energies can be controlled precisely and eventually can be tuned for optimizing the process. SKION's negative C- ion beam source is used to investigate the initial nucleation mechanism and growth. Strong C- ion beam energy dependence has been observed. Complete phase control of sp3 and sp3, control of the C/SiC/Si interface layer, control of crystalline and amorphous mode growth, and optimization of the physical properties for corresponding applications can be achieved.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1262-1264
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• 1993

An amorphous $Se_{75}Ge_{25}$ thin film as inorganic resist for the focused ion beam lithography(FIBL) is investigated. This film offers an attractive potential alternative to polymer resists because of a number of advantages, such as the possibility of preparing physically uniform films of thickness as small as 200A and obtaining both positive and negative resist action in the same material, compatibility with dry processing, the sensitivity on optical, e-beam and ion beam exposure, the high-temperature stability, etc. In previous paper, the defocused ion beam-induced characteristics in a-$Se_{75}Ge_{25}$ film has been propose. Practically it is neccesary to know the relation with resist and source ions. For the purpose, the ion stopping power, the ion projected range and ion transmission coefficiency are studied. In this paper, the theoretically calculated values of parameters are presented and compared with theory.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.228-230
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• 1994

A Spotter ion Plating(SIP) system with a r. f. coil electrode and the Facing Target Sputter(FTS) source was designed for high-quality thin film formation. The rf discharge was combined with DC facing target sputtering in order to enhance ionization degree of a sputtered atoms. The discharge voltage-discharge characteristics curves of a FTS source could be characterized by the fern of $I{\propto}V^n$ with n in the range of $8{\sim}12$. The energy of ions incident on the substrate depended on the sheath potential of DC biased substrate. The mean impact ion energy increased with negative bias voltage and rf power. The adhesive force of the TiN film formed was in the range of $30{\sim}50N$, and markedly influenced by substrate bias voltage.

• Nuclear Engineering and Technology
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• v.55 no.3
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• pp.939-946
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• 2023

Comprehensive Research Facility for Fusion Technology (CRAFT) is an integration of different demonstrating or testing facilities, which aim to develop the critical technology or composition system towards the fusion reactor. Due to the importance and challenge of the negative ion based neutral beam injection (NNBI), a NNBI test facility is included in the framework of CRAFT. The initial object of CRAFT NNBI test facility is to obtain a H⁰ beam power of 2 MW at the energy of 200-400 keV for the pulse duration of 100 s. Inside the negative ion accelerator of NNBI system, the interactions of the negative ions with the background gas and electrodes can generate abundant stray electrons. The stray electrons can be further accelerated and dumped on the electrodes or eject from the accelerator. The stray electrons, including the ejecting electrons, cause the unwanted particle and heat flux onto the electrodes and the inner components of beamline (especially the temperature sensitive cryopump). The suppression of the stray electrons from the CRAFT accelerator is carried out via a series of design and simulation works. The paper focuses the influence of different magnetic field configurations on the stray electrons and the character of the ejecting electrons.

• Journal of the Korean Chemical Society
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• v.68 no.3
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• pp.139-145
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• 2024

This study aims to elucidate the mechanism involved in the hydrolysis of the hexacyanoferrate(III) complex ion (Fe(CN)₆^3-) and the mechanism leading to the formation of Prussian blue (Fe^III₄[Fe_II(CN)₆]₃·xH₂O, PB) in acidic aqueous solutions at moderately elevated temperatures. Hydrolysis constitutes a crucial step in generating PB through the widely used single-source or precursor method. Recent PB syntheses predominantly rely on the single-source method, where hexacyanoferrate(II/III) is the exclusive reactant, as opposed to the co-precipitation method employing bare metal ions and hexacyanometalate ions. Despite the widespread adoption of the single-source method, mechanistic exploration remains largely unexplored and speculative. Utilizing UV-vis spectrophotometry, negative-ion mode liquid chromatography-electrospray ionization-mass spectrometry (LC-ESI-MS), and a devised reaction, this study identifies crucial intermediates, including aqueous Fe^2+/3+ ions and hydrocyanic acid (HCN) in the solution. These two intermediates eventually combine to form thermodynamically stable PB. The findings presented in this research significantly contribute to understanding the fundamental mechanism underlying the acid-catalyzed hydrolysis of the hexacyanoferrate(III) complex ion and the subsequent formation of PB, as proposed in the sequential mechanism introduced herein. This finding might contribute to the cost-effective synthesis of PB by incorporating diverse metal ions and potassium cyanide.