• 한국재료학회지
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• 제11권3호
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• pp.236-242
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• 2001

고속도 공구강 기판에 반응성 스퍼터링법으로 증착된 HfN/Si$_3$N$_4$와 NbN/Si$_3$N$_4$다층박막의 기계적인 성질들을 막 증착 조건에 따라 평가하였다. HfN/Si$_3$N$_4$와 NbN/Si$_3$N$_4$ 다층박막의 강도는 $N_2$/Ar비가 0.4일 때가지 증가하다가 유량비가 증가함에 따라 더 이상 증가하지 않았다. 두 다층박막의 강도는 낮은 온도에서의 열처리에 의해서는 거의 변화가 업지만 80$0^{\circ}C$ 정도의 고온에서는 열처리에 의한 산화로 인하여 감소하였다. 낮은 온도에서의 열처리는 밀착성을 향상시키는 반면 고온에서의 열처리는 강도의 감소 이외에 밀착성이 감소하므로 바람직하지 못하다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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• pp.221-224
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• 2000

We have successfully demonstrated metal-ferroel-ectric-insulator-semiconductor (MFIS) devices using Al/LiNbO$_{3}$/SiN/Si structure. The SiN thin films were made into metal -insulator- semiconductor (MIS) devices by thermal evaporation of aluminum source in a dot away on the surface. The interface property of MFIS from 1MHz & quasistatic C-V is good and the memory window width is about 1.5V at 0.2V/s signal voltage sweep rate. The gate leakage current density of MFIS capacitors using a aluminum electrode showed the least value of 1x10$^{-8}$ A/$\textrm{cm}^2$ order at the electric field of 300㎸/cm. And the XRD patterns shows the probability of applications of LN for MFIS devices for FeRAMs on amorphous SiN buffer layer.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1283-1288
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• 2004

Metal-ferroelectric-insulator-semiconductor(WFIS) capacitors using rapid thermal annealed LiNbO$_3$/AlN/Si(100) structure were fabricated and demonstrated nonvolatile memory operations. The capacitors on highly doped Si wafer showed hysteresis behavior like a butterfly shape due to the ferroelectric nature of the LiNbO$_3$ films. The typical dielectric constant value of LiNbO$_3$ film in the MFIS device was about 27, The gate leakage current density of the MFIS capacitor was 10$^{-9}$ A/cm$^2$ order at the electric field of 500 kV/cm. The typical measured remnant polarization(2P$_{r}$) and coercive filed(Ec) values were about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively The ferroelectric capacitors showed no polarization degradation up to 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulses of 1 MHz. The switching charges degraded only by 10 % of their initial values after 4 days at room temperature.e.

• 한국초전도ㆍ저온공학회논문지
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• 제17권3호
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• pp.9-12
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• 2015

NbN thin films were deposited on thermally oxidized Si substrate at room temperature by using reactive magnetron sputtering in an $Ar-N_2$ gas mixture. Total sputtering gas pressure was fixed while varying $N_2$ flow rate from 1.4 sccm to 2.9 sccm. X-ray diffraction pattern analysis revealed dominant NbN(200) orientation in the low $N_2$ flow rate but emerging of (111) orientation with diminishing (200) orientation at higher flow rate. The dependences of the superconducting properties on the $N_2$ gas flow rate were investigated. All the NbN thin films showed a small negative temperature coefficient of resistance with resistivity ratio between 300 K and 20 K in the range from 0.98 to 0.89 as the $N_2$ flow rate is increased. Transition temperature showed non-monotonic dependence on $N_2$ flow rate reaching as high as 11.12 K determined by the mid-point temperature of the transition with transition width of 0.3 K. On the other hand, the upper critical field showed roughly linear increase with $N_2$ flow rate up to 2.7 sccm. The highest upper critical field extrapolated to 0 K was 17.4 T with corresponding coherence length of 4.3 nm. Our results are discussed with the granular nature of NbN thin films.

• 한국재료학회지
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• 제3권2호
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• pp.131-139
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• 1993

극저탄소 알루미늄 킬드강내에 합금원소로 첨가된 Al, Ti, Nb, B등은 열처리 공정중 질화물이나 탄화물로 석출되어 강의 재결정집합조직을 변화시킴으로써 강판재의 디입드로잉 특성에 결정적인 영향을 미친다. 본 연구에서는 Ti및 Nb를 단독으로 또는 동시에 첨가한 데 이어, B, P, Si 및 Mn등을 추가로 첨가한 극저탄소 고강도 강판의 집삽조직에 미치는 질화물, 탄화물과 같은 미세 석출물의 영향을 TEM, SEM, 광학현미경분석에 의하여 조사하였다. Nb 및 Ti를 동시에 첨가한 강에서는 미세한 N$b_2$C 및 T$i_2$AIN가 주로 석출되는 반면, Nb를 단독으로 첨가한 강에서는 미세한 AIN 및 조대한 BN이 석출되고,Ti를 단독으로 첨가한 강에서는 비교적 조대한 T${i_4}{N_3}$및 조대한 ${N_10}{N_22}$/T$i_68$이 석출되는 것으로 관찰되었다. 또한 이러한 탄질화물들의 석출에 의하여 세 강이 서로 다른 결정입도를 나타내는데, 결정입도는 Nb 및 Ti동시첨가강과 Nb단독첨가강이 서로 비슷하고, Ti단독첨가강이 가장 큰 것으로 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.94-98
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• 2000

Polycrystalline SBTN ferroelectric thin films were prepared by sol-gel method with various Nb mole ratios on Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperatures and characterized in terms of phase and microstructure. Relatively a well saturated hysteresis pattern was obtained at x =0.2 in S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin films. At an applied voltage of 5V, the dielectric constant ($\varepsilon$$_{r}$) and dissipation factor (tan $\delta$) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin film (x=0.2) were about 236.2 and 0.034. Measured remanent polarization (2Pr) and coercive field (Ec) were 4.28C/c $m_2$, and 38.88kv/cm respectively. No fatigue was observed up to 6$\times$10$_{10}$ switching cycles at 5V and the normalized polarization reduced by a factor of only 4%.%. 4%.%. 4%.%.%.%.%.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.245-251
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• 2017

Niobium doped zirconium oxide (Nb-Zr-O:NZO) thin films were fabricated on Si substrates by a sol-gel technique with an annealing temperatures of $500{\sim}1000^{\circ}C$ in air ($N_2:O_2=3:1$) for 20 minutes. It was found that the NZO film is based on tetragonal $ZrO_2$ polycrystalline structure with the Nb 5+ ion state and there is almost no diffusion of Nb or Zr to Si substrate. The relative dielectric constant for the NZO film with the Nb composition of 30 mol% and annealed at $800^{\circ}C$ was around 40. The root mean roughness was 1.02 nm. In addition, the leakage current of NZO films was as low as $10^{-6}A/cm^2$ at 4.4 V.

• Journal of Welding and Joining
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• 제16권1호
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• pp.88-97
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• 1998

The surface characteristics of 13Cr stainless steel systems by plasma nitriding were investigated. The plasma nitriding for the 13Cr steels, in which the nitriding forming elements such as Ti, V, W, Nb, Al, Zr and Si were added about 2~3wt.%, respectively, was performed. In all nitrided specimens, .epsilon.-F $e_{2-3}$N, UPSILON.'-F $e_{4}$N and CrN were detected as the nitrides with the a-Fe in the nitrided layer. VN and .betha.- $W_{2}$N were also detected in 13Cr-3V and 13Cr-3W alloys. The growth of the nitrided layer was controlled by the diffusion process. The thickness of the nitrided layer was similar in the 13Cr-2Nb and 3Zr specimens to that of 13Cr(BM) specimen, while the others exhibited the thinner layer. The activation energy for the growth of the nitrided layer in the temperature range of 773-873K was about 130kJ/mol in 13Cr(BM), 13Cr-2Ti, 3W, 3Al, 3Zr and 3Si alloys. The hardness of the nitrided specimens was significantly increased above Hv1000, comparing to the non-nitrided specimen. The specimens with the nitrided forming elements revealed much higher hardness values and, especially, 13Cr-3Al, 3V and 3Si specimens were significantly hardened up to Hv1300.v1300.0.

• E2M - 전기 전자와 첨단 소재
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• 제9권10호
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• pp.991-1000
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• 1996

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb$_{2}$3/O$_{3}$) (PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol ratio of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20), #4(40:40:20), #5(40:50:10), #6(35:45:20) and #7(30:50:20) respectively. The spin-coated PZT-PNN films were heat-treated at 350.deg. C for decomposition of residual organics, and were sintered from 450.deg. C to 750.deg. C for crystallization. The substrates, such as Pt and Pt/TiN/Ti/TiN/Si were used for the spin coating of PZT PNN films. The perovskite phase was observed in the PZT-PNN films heat-treated at 500.deg. C. The crystalline of the PZT-PNN films was optimized at the sintering of 700.deg. C. By the result of AES analysis, It is confirmed that the films of TiN/Ti/TiN was a good diffusion barrier and that co-diffusion into the each films was not observed.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.24-27
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• 2000

Ferroelectric P $b_{0.99}$〔(Z $r_{0.6}$S $n_{0.4}$)$_{0.9}$ $Ti_{0.1}$〕$_{0.98}$N $b_{0.02}$ $O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on (L $a_{0.5}$S $r_{0.5}$)Co $O_3$(LSCO)/Pt/Ti/ $SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole％. The thin films deposited at the substrate temperature of 500 $^{\circ}C$ were crystallized to a perovskite phase after rapid thermal annealing(RTA) The thin films annealed at 650 $^{\circ}C$ for 10 seconds in air exhibited the good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about 20 $\mu$C/$\textrm{cm}^2$ and 50 kV/cm, respectively. The reduction of the polarization after 2.2$\times$10$^{9}$ switching cycles was less than 10 ％.0 ％.％.0 ％.0 ％.