• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.5
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• pp.644-648
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• 1995

Transparent xBa(La$_{1}$2/Nb$_{1}$2/)O$_{3}$-(1-x)Pb(Zr, Ti)O$_{3}$ (x=8.5, 9.0[mol.%], Zr/Ti=70/30~40/60) ceramics were fabricated by the two-stage sintering method, the electrooptic properties were investigated with Ba(La$_{1}$2/Nb$_{1}$2/)O$_{3}$ content and Zr/Ti composition ratio. Decreasing the Zr/Ti ratio, the electrooptic property was changed from a quadratic electrooptic effect to a linear electrooptic effcet. In the BLN-PZT 9.0/50/50 specimen having the tetragonal structure, the linear electrooptic coefficient had the highest value of 6.01*10$^{-10}$ [m/V] and in the BLN-PZT 9.0/55/45 specimen which located near the MPB region, the quadratic electrooptic coefficient had the highest value of 10.53*10$^{-16}$ [m$^{2}$/V$^{2}$].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.208-213
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• 1998

Microwave dielectric properties of $BiNbO_4$ containing CuO and $V_2O_5$(BN ceramics). BN ceramic with 0.07wt% $V_2O_5$ and 0.03wt% CuO (BNC3V7) was sintered at $900^{\circ}C$ where it is possible for these to be co-fired with Ag electrode. The dielectric constant of 44.3, TCF (Temperature Coefficient of resonance Frequency) of 2 ppm/$^{\circ}$ and Q${\times}f_o$ value (product of Quality value and resonance Frequency) of 22,000GHz could be obtained from those ceramics. It is observed that orthorhombic structure was stable $1000^{\circ}C$. As sintering temperature increases, the dielectric properties decreased. The main reasons were abnormal grain growth and the main peak of triclinic moved from the main peak of orthorhombic.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.676-680
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• 2003

In this study, to develop the low temperature sintering ceramics for piezoelectric transformer, PSN-PNN-PZT system ceramics were manufactured as a function of V$_2$O$_{5}$ addition, that is the low melting point oxide. Its dielectric and piezoelectric characteristics were investigated. With increasing the amount of V$_2$O$_{5}$ addition, electromechanical coupling factor(kp) and mechanical quality factor(Qm) were decreased. For piezoelectric transformer application, the 0.1wt% V$_2$O$_{5}$ added specimen sintered at 1,00$0^{\circ}C$ showed the proper value of $\varepsilon$r=1,590, kp=0.51 and Qm=748.m=748.

• Journal of the Microelectronics and Packaging Society
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• v.2 no.2
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• pp.31-40
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• 1995

Donor dopant로 WO3, Ta2O5 및 Nb2O5를 첨가한 Zr0.8Sn0.2TiO4 세라믹스의 유전상수 $\varepsilon$r 품 질계수 Q 및 공진주파수의 온도계수 rf에 대하여 연구하였다. 139$0^{\circ}C$에서 32시간 소결시 donor dopant 첨가량에 따른 ZST의 유전상수는 소결밀도의 변화 거동과 잘 일치하였다. 5.5 GHz에서 측정 한 ZST의 품질계수 Q는 ~0.5 mol% WO3 Ta2O5 및 Nb2O5 첨가에 의해 6800에서 8500 정도로 증가 하였다. ZST의 $\tau$f는 0.3 mol%까지의 WO3 첨가량 증가에 따라 0 ppm/$^{\circ}C$에서 -4.6 ppm/$^{\circ}C$까지 음 의 값으로 직선적으로 감소하였으며 0.4 mol% 범위의 Ta2O5 및 Nb2O5 첨가에 의해 -7 ppm/$^{\circ}C$ 까지 직선적으로 감소하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.489-494
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• 2009

In this study, In order to improve dielectric and piezoelectric properties of Lead-free piezoelectric ceramics, $0.95(K_{0.5}Na_{0.5})NbO_3-0.05Li(Sb_{0.8}Nb_{0.2})O_3+0.2\;wt%Ag_2O+0.4\;wt%MnO_2+Xwt%CuO$ were investigated as a function of the amount of CuO addition. With increasing the amount of CuO addition, density was increased up to 0.4 wt.% CuO and then decreased above. And also, electro mechanical coupling factor ($k_p$) was decreased. At the 0.4 wt% CuO added specimen sintered at $1020^{\circ}C$, $k_p$, Qm, density, dielectric constant (${\varepsilon}_r$) and $d_{33}$[pC/N] showed the optimal value of $4.37\;g/cm^3$, 0.354, 305, 645, and 144 pC/N respectively.

• Proceedings of the Korean Nuclear Society Conference
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• 1996.11b
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• pp.533-538
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• 1996

40$0^{\circ}C$ $H_2O$, D$_2$O 및 $O_2$ 분위기에서 Zr-2.5wt% Nb 합금의 부식거동을 비교.분석하였다. Zr-2.5wt% Nb 합금은 열처리에 따른 조직에 따라 각각의 부식매질에 대해 부식거동이 큰 차이를 보이고 있으나, 형성된 oxide는 열처리 및 부식매질에 관계없이 monoclinic ZrO$_2$ 만이 관찰되었다. 급냉조직인 martensitic $\alpha$'-Zr 상과 소둔처리 조직의 준안정상인 $\beta$-Zr 상의 경우. 부식분위기에 매우 민감하여, D$_2$O, H $_2$O, $O_2$ 순으로 큰 부식속도를 보였다. 반면, 안전성들인 $\alpha$-Zr과 $\beta$-Nb 상의 경우, 부식 분위기에 따른 별다른 부식거동 차이를 보이지 않았다. 이들 실험 결과를 바탕으로 월성형 원자로 압력관의 부식특성을 분석하였다.

• Electrical & Electronic Materials
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• v.3 no.3
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• pp.233-241
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• 1990

본 연구에서는 xPb(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$-yBa(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$-zPbTiO(0.50.leq.x.leq.0.60, 0.10.leq.y.leq.0.20, 0.20.leq.z.leq.0.40)세라믹을 1050.deg.C에서 2시간동안 유지시켜 일반소성법으로 제작하였다. 시편 제작시 조성은 조성변태 상경계부근을 선택하였으며 Ba(Zn$_{1}$3/ Nb$_{2}$3/)O$_{3}$ 고용량에 따른 purochlore상의 억제 및 그 영향을 조사하고 구조적, 유전적 및 압전적 특성을 측정하였다. X-선 회절분석 및 미세구조의 관찰 결과, Ba(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$의 고용량에 따라 pyrochlore상 및 미반응 물질등은 억제되어 0.20mol 고용된 시편에서는 균질한 perovskite상이 형성되었다. Ba(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$의 고용량이 증가함에 따라 유전상수는 증가하여 0.50PZN-0.20BZN-0.30PT시편의 경우 6880.9의 높은 값을 나타내었으며 정전용량의 온도계수는 감소하여 0.383[%/.deg.C]의 양호한 값을 나타내었다. 큐리온도는 PbTiO$_{3}$의 고용량이 0.20mol에서 0.40mol로 증가함에 따라 30.deg.C에서 170.deg.C로 증가하였다. 전기기계 결합계수 (K$_{p}$), 기계적 품질계수(Qm) 및 압전전하 계수 (d$_{33}$)는 조성변태 상경계 부근의 조성에서 크게 나타났으며 0.60PZN-0.15BZN-0.25PT 시편의 경우 각각 58.5%, 120.5, 150x$10^{-12}$[C/N]의 값을 나타내었다.다.다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.257-260
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• 2003

In this study, the structural, dielectric and piezielectric properities of $xPb(Mg_{1/3}Nb_{2/3})O_3-(0.5-x)Pb(Ni_{1/3}Nb_{2/3})O_3-0.5Pb(Zr_{0.3}Ti_{0.7})O_3$ ceramics were investigated with the substitution of $PbMg_{1/3}Nb_{2/3}O_3$. The results showed that the substitution of the $PbMg_{1/3}Nb_{2/3}O_3$ was effective in increasing the dielectric constant and electromechanical coupling factor $(K_p)$. The dielectric constant, dielectric loss and Kp showed the highest values of 4293, 2.4%, 0.59 relatively, when the substitution of amount of $PbMg_{1/3}Nb_{2/3}O_3$ was 5 mol%.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.1012-1220
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• 1994

BaTiO3 ceramics doped with 0.1 to 4.0 mol% Nb2O5 were prepared by conventional solid stage sintering process, so as to investigate the effect of the amount of Nb2O5 on the dielectric properties and complex impedance patterns of barium titanates. From the measurement of capacitance, we found that the dielectric constant of BaTiO3 samples with 1 mol% or more Nb2O5 remained approximately constant around room temperature with values higher than 2500. In this paper, the effect of impurity content as well as temperature on complex impedance patterns was discussed in detail. In particular, the grain and grain boundary behavior of samples which showed PTCR characteristics was discussed in terms of measuring temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.20-22
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• 1999

The effect of dopant and stoichiometry on the physical and optical properties of $LiNbO_{3}$ were studied. We prepared three samples, undoped, MgO doped $LiNbO_{3}$ with congruent composition and near-stoichiometric $LiNbO_{3}$. Dielectric constant and transmittance in UV/VIS/IR light range were measured. The results showed that the features for high [Li]/[Nb] were similar to those for low [Li]/[Nb] but with high [Mg].