• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.137-137
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• 2005

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.7-7
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• 2005

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.167.2-167.2
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• 2008

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.49.2-49.2
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• 2008

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.24-27
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• 2000

Ferroelectric P $b_{0.99}$〔(Z $r_{0.6}$S $n_{0.4}$)$_{0.9}$ $Ti_{0.1}$〕$_{0.98}$N $b_{0.02}$ $O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on (L $a_{0.5}$S $r_{0.5}$)Co $O_3$(LSCO)/Pt/Ti/ $SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole％. The thin films deposited at the substrate temperature of 500 $^{\circ}C$ were crystallized to a perovskite phase after rapid thermal annealing(RTA) The thin films annealed at 650 $^{\circ}C$ for 10 seconds in air exhibited the good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about 20 $\mu$C/$\textrm{cm}^2$ and 50 kV/cm, respectively. The reduction of the polarization after 2.2$\times$10$^{9}$ switching cycles was less than 10 ％.0 ％.％.0 ％.0 ％.

• Fire Science and Engineering
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• v.16 no.4
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• pp.15-19
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• 2002

This dissertation is about the development of $BaTiO_3$-type PTC(Positive Temperature Coefficient) thermistor by composition method. A multilayer-type PTC samples were fabricated under optimal conditions after setting the experimental composition equation as ($Ba_{0.95-x}$S $r_{0.05}$$Ca_{x}$ )$TiO_3$-$0.01TiO_2$-$0.01SiO_2$-$\alpha$$MnCO_3$-$\beta$N $b_2$ $O_{5}$.) and their testing results were analyzed. The optimal sin-tering and cooling temperatures were 13$50^{\circ}C$ for two hours and $100^{\circ}C$/h for an hour, respectively; By composing Ca and Mn, dopants to lower the resistivity at room temperature, and Nb, a dopant to raise peak resistivity(Ca:5 mol%, Mn:0.08 mol%, Nb:0.18 mol%), appropriately, a PTC thermistor, having the characteristics of relatively low resistivity at room temperature and high peak resistivity and a good temperature coefficient, has been developed. And we find that it is possible of application for fire detection sensor.r.r.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.2
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• pp.297-302
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• 2019

In this study, we deposited ITO thin films on buffer layer of $Nb_2O_5(8nm)/SiO_2(45nm)$ using DC magnetron sputtering method and investigated its electrical and optical properties with various DC powers(100~400 W). The surface of the ITO thin film was observed by AFM. All thin films had defected free surface such as pinholes and cracks. The thin film deposited at DC power of 200 W exhibited the smallest surface roughness of 1.431nm. As a result of electrical and optical measurements, the ITO thin film deposited at DC power of 200 W which showed the lowest resistivity of $3.03{\times}10^{-4}{\Omega}-cm$. The average transmittance in the visible light region(400 to 800 nm) and the transmittance at the wavelength of 550nm were found to be 85.8% and 87.1%, respectively. The chromaticity(b*) was also a relatively good value as 2.13. The figure of merit obtained from the sheet resistance of the ITO thin film, the average transmittance in the visible light region and the transmittance at the wavelength of 550nm were the best values of $2.50{\times}10^{-3}{\Omega}^{-1}$ and $2.90{\times}10^{-3}{\Omega}^{-1}$ at a DC power of 200W, respectively.

• Journal of Magnetics
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• v.11 no.1
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• pp.43-50
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• 2006

In this paper, the influences of microstructural and surface morphological developments on the soft magnetic properties and giant magneto-impedance (GMI) effect of the $Fe_{73.5-x}Cr_{x}Si_{13.5}B_{9}Nb_{3}Au_1$ (x = 1, 2, 3, 4, 5) alloys have been presented. It was found that the Cr addition slightly decreased the mean grain size of $\alpha-Fe(Si)$ grains. AFM results indicate a large variation of surface morphology of density and size of protrusions along the ribbon plane due to microstructural changes caused by thermal annealing with increasing Cr content. Ultrasoft magnetic properties of the nanocrystallized samples were noticeably enhanced by properly heat treatments at $T_a=540^{\circ}C$ such as an increase of the magnetic permeability and the decrease of coercivity, which is likely due to the formation of nanoscale $\alpha-Fe(Si)$ phase which reduced the magnetoelastic anisotropy of samples. Accordingly, the GMI effect was observed in the annealed samples. The correlation between the microstructure, surface morphology, and soft magnetic properties were explained by nucleation and growth model.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.198-199
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• 2002

연자성 재료는 투자율이 높고, 큰 포화자속 밀도를 갖는 재료로서 외부자계에 용이하게 자화되며, 그 용도를 살펴보면 전기에너지 변환, 자기기록. 변압기, 변성기, 각종 코아, 모터, 자기센서, 전ㆍ자계차폐재등 많은 전자기기에 이용되고 있다. 따라서 연자성재료는 기본적으로 결정자기이방성과 자왜가 작아야 한다. 한편 전기, 전자기의 경량화 및 고효율화를 위하여서는 포화자속밀도의 극대화, 고주파영역에서의 우수한 연자기 특성 및 저에너지 손실을 갖는 재료개발이 요구된다. (중략)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.90-95
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• 2003

The present paper is to investigate the phase stability and soft magnetic properties of amorphous CoNbZr films when Pd is added as a substitution for CoNbZr alloys. The films were prepared by a RF magnetron sputtering method. The CoNbZrPd films deposited on Si wafers exhibited amorphous structures being independent upon the amount of Pd added in the films. On the addition of 4.34% Pd, the excellent soft magnetic characteristics of the films were observed with a coercive force of 0.54 Oe and an anisotropy field of 11 Oe, whereas a coercive force of 1 Oe and an anisotropy field of 3.5 Oe were shown in the film without the addition of Pd. The increased anisotropy field and low coercive force of the films may be attributed to the occupancy of Pd in the preferred sites parallel to the external magnetic field applied on the deposition process. A permeability of about 1100 was kept constant in the operation frequency ranging up to 100 MHz, which can be explained by the Landau-Lifshitz formula.