• 한국광학회지
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• 제2권3호
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• pp.149-152
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• 1991

리튬나이오베이트 결정에 Ti를 열확산시켜 광도파로를 만드는 방법에서 문제가 되는 out-diffusion(삼출) 문제를 해결하는 방안으로 확산과정 이전에 $SiO_2$ 박막을 시료 위해 입히고 Ti을 열확산시켜 광도파로를 제조하는 방법을 제안하였으며, 기존의 방법에 의해서 만들어진 광도파로와 본 연구의 방법에 의해서 만든 광도파로의 근시야상(near field pattern)을 비교하였다.

• 한국전기전자재료학회논문지
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• 제33권6호
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• pp.465-470
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• 2020

Heterolayered K(Ta,Nb)O₃/Pb(Zr,Ti)O₃ thin films on Pt/Ti/SiO₂/Si substrates were prepared by a sol-gel process and spin-coating method. The structural and electrical properties were measured to investigate the possibility of application as an electrocaloric effect device. All specimens exhibited dense and uniform cross-sectional structures without pores, and the average thickness of the specimen coated six times was approximately 394 nm. Curie temperatures were observed at 5℃ or less in type-I and 10℃ in type-II specimens, respectively. Type-II specimens coated 6 times showed a relative dielectric constant of 758 and remanent polarization of 9.71 μC/㎠ at room temperature. The maximum electrocaloric effect occurred between 20 and 25℃, slightly higher than their Curie temperature, and the electrocaloric property (ΔT) of the type-II specimens coated 6 times was approximately 1.2℃ at room temperature.

• 멤브레인
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• 제34권2호
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• pp.140-145
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• 2024

에너지 패러다임의 변화가 요구되는 현대에 수소는 매력적인 에너지원이다. 이러한 수소를 정제하는 기술 중에서 분리막을 이용한 기술은 저비용으로 고순도의 수소를 정제할 수 있는 기술로 주목받고 있다. 그러나 수소 분리 성능이 뛰어난 팔라듐(Pd)은 가격이 매우 비싸 이를 대체한 소재가 필요하다. 본 연구에서는 수소 투과 성능은 좋으나 수소 취성에 약한 니오븀(Nb)과 수소 투과 성능은 떨어지나 내구성이 뛰어난 니켈(Ni)과 지르코늄(Zr)을 혼합한 합금으로 분리막을 제조하여 1~4 bar, 350~450 ℃ 조건에서 수소 투과 특성을 확인하였다. Pd를 코팅하지 않은 Ni₄₈Nb₃₂Zr₂₀ 분리막의 경우 최대 0.69 ml/cm²/min의 투과량을 보였으며, Pd가 코팅된 경우에는 최대 13.05 ml/cm²/min의 투과량을 보였다.

• Biomolecules & Therapeutics
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• 제22권6호
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• pp.563-569
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• 2014

Materials with differing surfaces have been developed for clinical implant therapy in dentistry and orthopedics. This study was designed to evaluate bone response to titanium alloy containing Ti-32Nb-5Zr with nanostructure, anodic oxidation, heat treatment, and ibandronate coating. Rats were randomly assigned to two groups for implantation of titanium alloy (untreated) as the control group and titanium alloy group coated with ibandronate as the experimental group. Then, the implants were inserted in both tibiae of the rats for four weeks. After implantation, bone implant interface, trabecular microstructure, mechanical fixation was evaluated by histology, micro-computed tomography (${\mu}CT$) and the push-out test, respectively. We found that the anodized, heat-treated and ibandronate-coated titanium alloy triggered pronounced bone implant integration and early bone formation. Ibandronate-coated implants showed elevated values for removal torque and a higher level of BV/TV, trabecular thickness and separation upon analysis with ${\mu}CT$ and mechanical testing. Similarly, higher bone contact and a larger percentage bone area were observed via histology compared to untreated alloy. Furthermore, well coating of ibandronate with alloy was observed by vitro releasing experiment. Our study provided evidences that the coating of bisphosphonate onto the anodized and heat-treated nanostructure of titanium alloy had a positive effect on implant fixation.

• 한국전기전자재료학회논문지
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• 제12권1호
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• pp.62-68
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• 1999

Ferroelectric $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$(x=0, 0.1, 0.2, 0.3) thin films were deposited on $Pt/SiO_2/Si$ substrate by MOD(Metalorganic Decomposition) process. Metal carboxylate and metal alkoxide were used as precursors, and 2-methoxyethanol, xylene as solvents. After spin coating, thin films were pre-annealed at $400^{\circ}C$, followed by RTA(Rapid Thermal Annealing) and final annealing at $800^{\circ}C$ in oxygen atmosphere. These procedures were repeated three times to obtain thin films with the thickness of $2000{\AA}$. To enhance the nucleation and growth of layered-perovskite phase, thin films were rapid-thermally annealed above $720^{\circ}C$ in oxygen atmosphere. As RTA temperature increased, fluorite phase was transformed to layered-perovskite phase. And the change of Nb contents affected dielectric / electrical properties and microstructure. The ferroelectric characteristics of $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$ thin film were Pr=8.67 $\mu{C}/cm^2$, Ec=62.4kV/cm and $I_{L}=1.4\times10^{-7}A/cm^2$ at the applied voltage of 5V, respectively.

• 한국분말재료학회지
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• 제31권3호
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• pp.255-262
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• 2024

Nano-oxide dispersion-strengthened (ODS) superalloys have attracted attention because of their outstanding mechanical reinforcement mechanism. Dispersed oxides increase the material's strength by preventing grain growth and recrystallization, as well as increasing creep resistance. In this research, atomic layer deposition (ALD) was applied to synthesize an ODS alloy. It is useful to coat conformal thin films even on complex matrix shapes, such as nanorods or powders. We coated an Nb-Si-based superalloy with TiO₂ thin film by using rotary-reactor type thermal ALD. TiO₂ was grown by controlling the deposition recipe, reactor temperature, N₂ flow rate, and rotor speed. We could confirm the formation of uniform TiO₂ film on the surface of the superalloy. This process was successfully applied to the synthesis of an ODS alloy, which could be a new field of ALD applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.509-512
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• 1999

Ferroelectric Sr$_2$(Nb, Ta)$_2$O$_{7}$(SNTO), La$_2$Ti$_2$O$_{7}$(LTO) thin films were prepared by sol-gel processes. SNTO, LTO thin films were spin-coated on Pt/TiO$_2$/SiO$_2$/Si(100). Pt/Ti/SiO$_2$/Si(100). PT/ZrO$_2$/SiO$_2$/Si(100) substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. Dielectric and other relevant electrical properties were measured and the results showed a little possibility in ferroelectric gate random access memory devices.ces.

• 한국세라믹학회지
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• 제32권3호
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• pp.281-288
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• 1995

to prepare the TiO2 thin films, acetyl-acetone(2.4-pentanedione)(1 : 1 molar ratio) was dissolved in the propanol solution of titanium(IV)isopropoxide(Ti[OCH(CH3)2]4). Al, Cr and Sb in the form of soluble salt and niobium ethoxide were added s dopants, respectively. Thin films were coated by the dip-coating method and characteristics were investigated by XRD, SEM and conductance meter. As a result, viscosity of sol was maintained below 4 centi Poise more than 20 days, and crystal growth and diminution of resistivity occurred as the heat treatment temperature increased. The grains grew over 1${\mu}{\textrm}{m}$ and the lowest resistivity was obtained when Nb was added at 130$0^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.85-85
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• 1999

Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT)는 높은 유전율로 인해 강유전체 메모리 소자의 응용을 위한 연구가 되고 있으며 또한 전왜(electrostrictive)성을 갖고 있어 이력현상을 갖지 않음으로 최근 들어 미세전기기계소자(MEMS)로의 연구가 활발히 되고 있다. 본 연구에서는 MEMS 소자로서의 응용을 위해 저응력 SiNx가 형성된 Si 기판위에 Pt 전극 혹은 산화물 전극 SrRuO3를 갖는 PMN-PT 박막 캐패시터를 제조하였다. 박막 하부의 구조는 금속전극의 경우 Pt/Ti/LTO/SiNx/Si이고 산화물전극은 SrRuO3/Ru/SiNx/Si의 구조를 갖는다. PMN-PT 박막은 alkoxide를 기반으로 회전 coating 방법을 사용하여 박막 하부층의 변화를 주어서 성장시켰다. PMN-PT 용액의 합성은 분말합성법에서 사용하는 columbite 방법을 응용하여 상대적으로 반응정도가 낮은 Mg를 Nb와 우선 반응하여 Mg-Nb solution을 얻고 Pb-acetate 용액과 합성하여 PMN을 제조한 후 PT를 반응시켜서 제조하였다. PMN-PT 박막에서 동일한 공정조건 하에서 박막 하부층의 구조에 따라서 PMN-PT 박막의 조성이 A2B2O6의 조성을 가지는 파이로클러어상이 형성되거나 또는 ABO3인 페로브스카이트상이 형성되는 것을 관찰하였다. 금속 전극인 Pt를 하부전극으로 사용한 경우는 혼재상이 형성되어 패로브스카이드 PMN-PT를 얻기 위해 seed layer로서 PbTiO3를 사용하였으며 이러한 seed layer 위에 형성된 PMN-PT를 형성하는 경우 rutile 구조인 RuO2 위에 성장시킨 PMN-PT는 파이로클로어와 페로브스카이트의 혼재상이 얻어졌으나 pseudo-perovskite 구조인 SrRuO3 박막 위에 형성된 PMN-PT 박막에서는 페로브스카이트가 주된 상으로 얻어졌다. 즉 하부층(전극 또는 seed layer)으로 perovskite 구조를 갖는 박막을 형성하게 되면 페로브스카이트를 갖는 PMN-PT 박막을 얻을 수 있었다. 전기적인 특성은 상부전극으로 Pt를 사용하여 HP 4194A로 측정을 하였다. PT seed layer를 포함한 PMN-PT 박막은 유전상수 1086과 유전손실 2.75%을 가졌다.

• E2M - 전기 전자와 첨단 소재
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• 제10권2호
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• pp.134-140
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• 1997

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb $_{2}$3/O$_{3}$)(PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol rates of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20) and #4(40:40:20), respectively. The spin-coated PZT-PNN films were sintered at the temperature from 500.deg. C to 600.deg. C for crystallization. The P-E hysteresis curve was drawn by Sawyer-Tower circuit with PZT-PNN film. The coercive field and the remanent polarization of #4(40:40:20 mol%) PZT-PNN film were 28.8 kV/cm and 18.3 .mu.C/cm$^{2}$, respectively. Their dielectric constants were shown between 128 and 1120, and became maximum value in MPB(40:40:20 mol%). The leakage currents of PZT-PNN films were about 9.4x 10$^{-8}$ A/cm$^{2}$, and the breakdown voltages were about 0.14 and 1.1 MV/cm. The Curie point of #3(45:35:20 mol%, sintered at 600.deg. C) film was 330.deg. C.