• 제목/요약/키워드: Nb/$Al_{2}O_{x}$/Nb junction

검색결과 4건 처리시간 0.015초

갭전압에서 나타난 Nb/Al-Al$O_{x}$/Nb 터널 접합의 전압 요동 현상 (Voltage Fluctuation of a Nb/Al-Al$O_{x}$/Nb Tunnel Junction Observed at the Gap Voltage)

  • 홍현권;김규태;박세일;김구현;남두우
    • 한국초전도저온공학회:학술대회논문집
    • /
    • 한국초전도저온공학회 2002년도 학술대회 논문집
    • /
    • pp.123-126
    • /
    • 2002
  • Samples of Nb/Al-Al$O_{x}$/Nb tunnel junction with the size of 50$\mu$m $\times$ 50$\mu$m were fabricated by employing self-aligning and reactive ion etching technique. In the samples with high-quality, $V_{m}$ value (the product of the critical current and subgap resistance measured at 2 mV) was 34 mV at the critical current density $J_{c}$ = 500 A/$cm^{2}$ and $V_{g}$ value (the gap voltage) was 2.8 mV. In the higher $J_{c}$, voltage fluctuation in the current rising at the gap voltage was observed. The $V_{m}$ and $J_{c}$ value were 8 mV and 900 A/$cm^{2}$, respectively.

  • PDF

$28 A/cm^2~ 940 A/cm^2$의 임계전류밀도 범위로 제작된 $Nb/Al-AlO_x/Nb$ 터널접합의 전기적 특성 (Electrical Characteristics of $Nb/Al-AlO_x/Nb$ Tunnel Junction fabricated with $I_c$ Values in the Range of $28 A/cm^2~ 940 A/cm^2$)

  • 홍현권;김규태;박세일;김구현;남두우
    • 한국초전도ㆍ저온공학회논문지
    • /
    • 제4권1호
    • /
    • pp.4-7
    • /
    • 2002
  • Samples of $Nb/Al-AlO_x/Nb$ tunnel junction with the size of $50 ${\mu}{\textrm}{m}$ {\times} 50 ${\mu}{\textrm}{m}$$ were fabricated by using self-aligning and reactive ion etching technique In the high quality samples, the $V_m$ value (the product of the critical current and subgap resistance measured at 2 mV) was 34 mV at the critical current density of $J_c: 500 A/cm^2 and the V_g$ value (the gap voltage) was 2.8 mV. For the higher $J_c$ sample, voltage fluctuation at the gap voltage was observed. The $V_m and J_c$ values for this sample were 8 mV and 900 A/cm$^2$, respectively. Also, the relationship between critical current density $J_c$ and specific normal conductance $G_s$ of the junctions with $J_c$ in the range of 28 A/cm$^2$~940 A/cm$^2$was investigated.

A Low-noise Double Relaxation Oscillation SQUID Magnetometer for Measuring Magnetoencephalogram

  • 강찬석;이용호;권혁찬;김진목;윤병운
    • Progress in Superconductivity
    • /
    • 제3권2호
    • /
    • pp.151-158
    • /
    • 2002
  • We developed a useful SQUID magnetometer for biomagnetic applications, magnetoencepha-logram(MEG) and magnetocardiogram(MCG), etc. The SQUIDs are based on Double Relaxation Oscillation SQUID(DROS). DROS consists of two SQUIDs(signal SQUID and reference SQUID) in series, and a relaxation circuit of an inductor and a resistor. Specially we used single reference junction instead of the reference SQUID. The SQUIDs are based on hysteretic $Nb/AlO_{x}$Nb junctions, fabricated by using a simple four level process. Because DROS magnetometer has large flux-to-voltage transfer coefficient, we can use simple flux-locked loop electronics fur SQUID operation. When the DROS magnetometer was operated inside a magnetically shielded room, its average magnetic field noise was about 3 (equation omitted) at 100 Hz. This noise level is low enough to measure biomagnetic fields. In this paper, we describe noise characteristics of DROS magnetometer, depending on the operation condition . .

  • PDF