• Title/Summary/Keyword: National Carrier

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A Study on Implications of the naval Strategy in West Germany and Future Direction of Korean Navy (냉전기 서독해군 전략의 시사점과 향후 대한민국 해군의 방향성에 관한 연구)

  • Shin, Hong-Jung
    • Strategy21
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    • s.46
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    • pp.159-204
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    • 2020
  • This study is written to bring the proposal forward for the direction of south korean naval force. The political situation and the circumstance of the world, especially in the area of Pacific Ocean, are changing very rapidly. North Korea has been always the conventional existing intimidator for South Korea since the 6·25-War. Additionally, the strengthening movements of the national defense, which is easily noticed from China and Russia, is also an other part of intimidating countries against South Korea. Those three mentioned countries are continually developing the asymmetrical warfare systems, for example a strategic nuclear weapon. Since the Obama Administration, the Asia-Pacific Rebalancing-Strategy has been changed as an East Asian foreign policy. Nowadays, Trump Administration renamed the 'United States Pacific-Command' to 'United States Indo-Pacific Command'. The purpose of this is not only letting India to participate in american alliance, but also reducing an economic burden, which is often mentioned in USA. West Germany was located in the very similar geopolitical position during the Cold War just like South Korea these days. And that's why the strategy of West German Navy is worthy of notice for south korean naval force to decide its suitable strategy. Most of all, the two most important things to refer to this study are the plan to expand naval air force and the realistic political stand for us to take it. In conclusion, I laid an emphasis on maintenance of 'green-water-navy'. instead of selecting the strategy as a 'blue-water-navy'. The reason I would like to say, is that south korean navy is not available to hold the unnecessary war potential, just like Aircraft-Carrier. However, this is not meaning to let the expansion of naval force carelessly. We must search the best solution in order to maintain the firm peace within the situation. To fulfill this concept, it is mostly very important to maintain the stream of laying down a keel of destroyers, submarines and air-defense-missile, as well as the hight-tech software system, taking a survey of 4th industrial revolution. Research and development for the best solution of future aircraft by south korean navy is likewise necessary. Besides, we must also set the international diplomatic flexibly. As well as maintaining the relationship with US Forces, it is also very important to improve the relationship with other potential allied nation.

Phosphatidic Acid Production by PLD Covalently Immobilized on Porous Membrane (공유결합으로 다공성 막에 고정화된 PLD에 의한 포스퍼티딕산 생산)

  • Park, Jin-Won
    • Clean Technology
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    • v.21 no.4
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    • pp.224-228
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    • 2015
  • Phospholipase D (PLD) was immobilized on a submicro-porous membrane through covalent immobilization. The immobilization was conducted on the porous membrane surface with the treatment of polyethyleneimine, glutaraldehyde, and the anhydrase, in sequence. The immobilization was confirmed using X-ray photon spectrometer. The pH values of phosphatidylcholine (PC) dispersion solution with buffer were monitored with respect to time to calculate the catalytic activities of PC for free and immobilized PLD. The catalytic rate constant values for free PLD, immobilized PLD on polystyrene nanoparticles, and immobilized PLD on a porous cellulose acetate membrane were 0.75, 0.64, and 0.52 s-1, respectively. Reusability was studied up to 10 cycles of PC hydrolysis. The activity for the PLD immobilized on the membrane was kept to 95% after 10 cycles, and comparable to the PLD on the nanoparticles. The stabilities for heat and storage were also investigated for the three cases. The results suggested that the PLD immobilized on the membrane had the least loss rate of the activity compared to the others. From these studies, the porous membrane was feasible as a carrier for the PLD immobilization in the production of phosphatidic acid.

Parenthood (어버이살이)

  • Cho, Doo-Young
    • Korean Journal of Psychosomatic Medicine
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    • v.5 no.1
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    • pp.3-11
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    • 1997
  • In becoming parents, the marital partners enter into a new developmental phase. The conception of the child is an act of mutual creativity during which the boundaries between the self and another were temporarily obliterated more completely than at any time since infancy. The infant is a physical fusion of the parents, and their personalities unite within the child. for many women, creativity as a mother becomes a central matter that provides meaning and balance to their lives. The husband usually has strong desires for an offspring and can be transformed by it. The child can profoundly affect one or both parents, and the influences are reciprocal-a child's needs or specific difficulties uncover a parent's inadequacy. following the child's development, each transition into a new developmental phase requires an adaptation by the parents, and one or another of these required adaptations may disturb a parent's equilibirium. And the personality changes, emotional difficulties, and regressions of a spouse that occur in response to some phase of parenthood can upset the marriage. Not only do children identify with parents, but parents also identify with their children. The parents take pleasure in child's joy and suffer with the child's pain more than in almost any other relationship. certain respects e parents lives again in the child. Through the process of identification the child can also provide one of the two parents with the opportunity to experience intimately the way in which a person of the opposite gender grows up. Parenthood also provides the opportunity to be loved, admired, and needed simply because one is a parent and, as such, a central and necessary object in the young child's life. The many potentialities for emotional satisfactions from parenthood manage to outweigh the tribulations and sacrifices that are required. The child also exerts an indirect effect through changing the parent's position in the society, for new sets of relationships are established as the parents are drawn to other couples with children of the same age, and for a new impetus toward economic and social mobility often possesses the parents. frequently the couple's relatedness to their own parents improves and grows firmer once again. Parenthood, the satisfactions it provides and the demands it makes, varies as life progresses : and changes with the parent's interests, needs, and age as well as with the children's maturation. There are phases in the child's life that the parents are reluctant to have pass, whereas they tolerate others largely through knowing that they will soon be over. The changing lives of the children provide many satisfactions that offset the tribulations, uncertainties, and regrets. The parents change. The young father, who was just starting on his carrier whom the first child was born, settles into a life pattern. He becomes secure with increasing achievement and interacts differently with the youngest child and provides a different model for him than for the oldest. The mother may have less time for a second or third child than for her first, but she may also be more assured in her handling of them. The birth of a baby when the parents art in their late thirties will find them Less capable of physical exertion with the child and less tolerant of annoyances, but they are less apt to be annoyed. Eventually the children min and leave home, but the couple do not cease to be parents.

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A Study on the reflection ratio of ICAO Annex 6 (Operations of Aircraft) incorporated into our domestic air laws - Focused on ICAO Annex 6 Part I (International Commercial Air Transport - Aeroplanes) - (ICAO 부속서 6(항공기 운항)의 국내 항공법령 반영률에 관한 연구 - ICAO Annex 6 Part I (국제상업항공운송-항공기)을 중심으로 -)

  • Noh, Kun-Soo;Jie, Min-Seok;Kim, Woong-Yi
    • The Korean Journal of Air & Space Law and Policy
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    • v.28 no.2
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    • pp.97-115
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    • 2013
  • The world-wide principal criteria of aircraft operations is ICAO Annex 6. Operations of Aircraft. Among ICAO Annex 6, Part I is for International Commercial Air Transport - Aeroplanes and it assumes major part of civil aviation. ICAO has been providing Contracting States with SARPs(Standards and Recommended Practices) and monitor each State's reflection degree into their domestic air law, so-called USOAP(Universal Safety Oversight Audit Program). Current ICAO USOAP is Snap-shot method, but it will be changed to USOAP-CMA method from the year of 2013. ICAO USOAP results have overall effects on national aviation industry such as routes, insurance, airlines cooperation and so forth. Low grades of results attract international attention and that leads to flag carrier's operation stoppage, route restriction, airlines cooperation restriction, insurance increase directly or indirectly. Thus it is important to get excellent grades in ICAO USOAP and to maintain confidence. Our government ranked top to get 98.89 grades in 2008 ICAO USOAP but after 2008 the revised provisions have not been reflected sufficiently into our air law. So I would like to grip reflection ratio of ICAO Annex 6 Part I into our domestic air law by using the most updated revised edition on this paper. Together I would like to suggest alternatives for the non-reflected and partially reflected.

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Electrical Conductivity of $(ZrO_2)_x-(Tm_2O_3)_y$ System ($(ZrO_2)_x-(Tm_2O_3)_y$계의 전기전도도)

  • Eun Kyung Cho;Won Yang Chung;Keu Hong Kim;Seung Koo Cho;Jae Shi Choi
    • Journal of the Korean Chemical Society
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    • v.31 no.6
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    • pp.498-502
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    • 1987
  • Electrical conductivities of $(ZrO_2)_x-(Tm_2O_3)_y$ systems containing 1, 3 and 5mol% of $ZrO_2$ have been measured as a function of temperature and of oxygen partial pressure at temperatures from 600 to 1,100$^{\circ}$C and oxygen partial pressures from $10^{-5}$ to $2{\times}10^{-1}atm$. Plots of log conductivity vs. 1/T are found to be linear and average activation energy is 1.51 eV. The electrical conductivity dependences on PO$_2$ are different at two temperature regions, indicating ${\sigma}{\alpha}PO_2^{1/5.3}$ and ${\sigma}{\alpha}PO_2^{1/10.7}$ at high-and low-temperature regions, respectively. The defect of $(ZrO_2)_x-(Tm_2O_3)_y$ system is $V_{Tm}^{'''}$ and an electron hole is suggested as a carrier at high temperature region. At low temperature region, a mixed ionic and hole conduction is reasonable.

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On the Crystal Growth of Gap by Synthesis Solute Diffusion Method and Electroluminescence Properties. (합성용질확산법에 의한 GaP결정의 성장과 전기루미네센스 특성)

  • Kim, Seon-Tae;Mun, Dong-Chan
    • Korean Journal of Materials Research
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    • v.3 no.2
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    • pp.121-130
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    • 1993
  • The GaP crystals were grown by synthesis solute diffusion method and its properties were investigated. High quality single crystals were obtained by pull-down the crystal growing ampoule with velocity of 1.75mm/day. Etch pits density along vertical direction of ingot was increased from 3.8 ${\times}{10^4}$c$m^{-2}$ of the first freeze to 2.3 ${\times}{10^5}$c$m^2$ of the last freeze part. The carrier concentration and mobilities at room temperature were measured to 197.49cc$m^2$/V.sec and 6.75 ${\times}{10^{15}}$c$m^{-3]$, respectively. The temperature dependence of optical energy gap was empirically fitted to $E_g$(T)=[2.3383-(6.082${\times}{10^{-4}}$)$T^2$/(373. 096+TJeV. Photoluminescence spectra measured at low temperature were consist with sharp line-spectra near band-gap energy due to bound-exciton and phonon participation in band edge recombination process. Zn-diffusion depth in GaP was increased with square root of diffusion time and temperature dependence of diffusion coefficient was D(Tl = 3.2 ${\times}{10^3}$exp( - 3.486/$k_{\theta}$T)c$m^2$/sec. Electroluminescence spectra of p-n GaP homojunction diode are consisted with emission at 630nm due to recombination of donor in Zn-O complex center with shallow acceptors and near band edge emission at 550nm. Photon emission at current injection level of lower than 100m A was due to the band-filling mechanism.

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Growth of Thin Film Using Chemical Bath Deposition Method and Their Photoconductive Characteristics (CBD 방법에 의한 CdS 박막의 성장과 광전도 특성)

  • Hong, K.J.;Lee, S.Y.;You, S.H.;Suh, S.S.;Moon, J.D.;Shin, Y.J.;Jeoung, T.S.;Shin, H.K.;Kim, T.S.;Song, J.H.;Rheu, K.S.
    • Journal of Sensor Science and Technology
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    • v.2 no.1
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    • pp.3-10
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    • 1993
  • Polycrystalline CdS thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure whose lattice constants $a_{o}$ and $c_{o}$ were $4.1364{\AA}$ and $6.7129{\AA}$, respectively. Its grain size was about $0.35{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility defending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150k and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

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Characterization of CdSe Thin Film Using Chemical Bath Deposition Method (Chemical Bath Deposition 방법으로 제작한 CdSe 박막의 특성)

  • Hong, K.J.;Lee, S.Y.;You, S.H.;Suh, S.S.;Moon, J.D.;Shin, Y.J.;Jeong, T.S.;Shin, H.K.;Kim, T.S.;Song, J.H.;Rheu, K.S.
    • Journal of Sensor Science and Technology
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    • v.2 no.1
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    • pp.81-86
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    • 1993
  • Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition (CBD) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in $N_{2}$ gas at $450^{\circ}C$ it was found hexagonal structure whose lattice parameters $a_{o}$ and $c_{o}$ were $4.302{\AA}$ and $7.014{\AA}$, respectively. Its grain size was about $0.3{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33 K and 200 K, and by polar optical scattering at temperature range of 200 K and 293 K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

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Growth of CdS Single Crystal as Photoconductor and Its Physical Characteristics (광전도체의 CdS 단결정 성장과 물리적 특성)

  • Jeong, T.S.;Yu, P.Y.;Shin, Y.J.;Shin, H.K.;Kim, T.S.;Jeong, C.H.;Lee, H.;Shin, Y.S.;Hong, K.J.;Rheu, K.S.
    • Journal of Sensor Science and Technology
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    • v.2 no.1
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    • pp.109-115
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    • 1993
  • A CdS single crystal was grown by using sublimation method. Lattice constants, $a_{o}$ and $c_{o}$, obtained by using extrapolation were $4.131{\underline{8}}{\AA}$ and $6.712{\underline{2}}{\AA}$, respectively. The carrier density was${\sim}10^{23}m^{-3}$ and the mobility was $2.93{\times}10^{-2}m^{2}$/V sec from measured Hall data at room temperature. The mobility has a increasing tendency in proportion to $T^{1/2}$ from 33 K to 150 K and a decreasing tendency in proportion to $T^{-2}$ from 180 K to room temperature. The short wavelength band peak measured from photocurrent was due to intrinsic transition, and the energy value of this peak was equal to the energy band gap of CdS photoconductor.

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Metalorganic Chemical Vapor Deposition of Copper Films on TiN Substrates Using Direct Liquid Injection of (hfac)Cu(vtmos) Precursor ((hfac)Cu(vtmos)의 액체분사법에 의한 TiN 기판상 구리박막의 유기금속 화학증착 특성)

  • Jun, Chi-Hoon;Kim, Youn-Tae;Kim, Dai-Ryong
    • Korean Journal of Materials Research
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    • v.9 no.12
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    • pp.1196-1204
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    • 1999
  • We have carried out copper MOCVD(metalorganic chemical vapor deposition) onto the reactive sputtered PVD-TiN and rapid thermal converted RTP-TiN substrates using direct liquid injection for effective delivery of the (hfac)Cu(vtmos) [$C_{10}H_{13}O_{5}CuF_{6}$Si: 1,1,1,5,5,5-hexafluoro-2,4- pentadionato (vinyltrimethoxysilane) copper (I)] precursor. Especially, the influences of deposition conditions and the substrate type on growth rate, crystal structure, microstructure, and electrical resistivity of copper deposits have been discussed. It is found that the film growth with 0.2ccm precursor flow rate become mass-transfer controlled up to Ar flow rate of 200sccm and pick-up rate controlled at a vaporizer above 1.0Torr reactor pressure. The surface-reaction controlled region from 155 to 225$^{\circ}C$ at 0.6Torr reactor pressure results in the apparent activation energies of 12.7~14.1kcal/mol, and above 224$^{\circ}C$ the growth rate with $H_2$ addition could be improved compared to the pure Ar carrier. The Cu/RTP-TiN structures which have high copper nucleation density in initial stage of growth show more pronounced (111) preferred orientations and lower electrical resistivities than those on PVD-TiN. The variation of electrical resistivity with substrate temperature reflects the three types of film microstructure changes, showing the lowest value for the deposit at 165$^{\circ}C$ with small grains of good contacts.

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