• 제목/요약/키워드: Nanowire

검색결과 742건 처리시간 0.042초

Dependence of the Electronic Structure Dependence of Si Nanowires on the Diameter

  • 양민영
    • EDISON SW 활용 경진대회 논문집
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    • 제3회(2014년)
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    • pp.501-504
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    • 2014
  • Si nanowire는 트랜지스터, 배터리 등 광범위한 응용이 가능한 물질로서 이의 효율적 활용을 위해서는 그 다양한 구조에 대한 물성 변화의 연구가 중요하다. 이 연구에서는 [110] 방향의 $4{\times}3$, $6{\times}4$, $8{\times}5$ Si nanowire에 대하여 DFT 기반 제일원리적 계산을 수행함으로써, $6{\sim}14{\AA}$ 범위에서 nanowire 지름의 변화에 따른 전자구조 의존성에 대하여 연구하였다. 그 결과, bulk와 비교하여 Si nanowire의 경우 bandwidth 감소 및 bandgap의 증가가 나타나며, 이러한 경향은 nanowire 지름이 커질수록 점진적으로 약화됨을 알 수 있었다.

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Applications of Nanowire Transistors for Driving Nanowire LEDs

  • Hamedi-Hagh, Sotoudeh;Park, Dae-Hee
    • Transactions on Electrical and Electronic Materials
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    • 제13권2호
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    • pp.73-77
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    • 2012
  • Operation of liquid crystal displays (LCDs) can be improved by monolithic integration of the pixel transistors with light emitting diodes (LEDs) on a single substrate. Conventional LCDs make use of filters to control the backlighting which reduces the overall efficiency. These LCDs also utilize LEDs in series which impose failure and they require high voltage for operation with a power factor correction. The screen of small hand-held devices can operate from moderate brightness. Therefore, III-V nanowires that are grown along with transistors over Silicon substrates can be utilized. Control of nanowire LEDs with nanowire transistors will significantly lower the cost, increase the efficiency, improve the manufacturing yield and simplify the structure of the small displays that are used in portable devices. The steps to grow nanowires on Silicon substrates are described. The vertical n-type and p-type nanowire transistors with surrounding gate structures are characterized. While biased at 0.5 V, nanowire transistors with minimum radius or channel width have an OFF current which is less than 1pA, an ON current more than 1 ${\mu}A$, a total delay less than 10 ps and a transconductance gain of more than 10 ${\mu}A/V$. The low power and fast switching characteristics of the nanowire transistor make them an ideal choice for the realization of future displays of portable devices with long battery lifetime.

Influence of transient surface hydrogen on Aluminum catalyzed Silicon nanowire growth

  • 신내철
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.125.2-125.2
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    • 2016
  • Semiconductor nanowires are essential building blocks for various nanotechnologies including energy conversion, optoelectronics, and thermoelectric devices. Bottom-up synthetic approach utilizing metal catalyst and vapor phase precursor molecules (i.e., vapor - liquid - solid (VLS) method) is widely employed to grow semiconductor nanowires. Al has received attention as growth catalyst since it is free from contamination issue of Si nanowire leading to the deterioration of electrical properties. Al-catalyzed Si nanowire growth, however, unlike Au-Si system, has relatively narrow window for stable growth, showing highly tapered sidewall structure at high temperature condition. Although surface chemistry is generally known for its role on the crystal growth, it is still unclear how surface adsorbates such as hydrogen atoms and the nanowire sidewall morphology interrelate in VLS growth. Here, we use real-time in situ infrared spectroscopy to confirm the presence of surface hydrogen atoms chemisorbed on Si nanowire sidewalls grown from Al catalyst and demonstrate they are necessary to prevent unwanted tapering of nanowire. We analyze the surface coverage of hydrogen atoms quantitatively via comparison of Si-H vibration modes measured during growth with those obtained from postgrowth measurement. Our findings suggest that the surface adsorbed hydrogen plays a critical role in preventing nanowire sidewall tapering and provide new insights for the role of surface chemistry in VLS growth.

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Brush Painting을 이용하여 제작된 ITO Nanoparticle/Ag Nanowire/ITO Nanoparticle 다층 하이브리드 투명전극 특성 연구

  • 정진아;장윤진;김한기
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.595-595
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    • 2013
  • 본 연구에서는 brush painting공법을 이용하여 인쇄형 유기태양전지에 적용이 가능한 ITO nanoparticle/Ag nanowire/ITO nanoparticle (Nano IAI) 다층 하이브리드 투명 전극의 전기적, 광학적, 구조적 특성을 연구하였다. 평균 25 nm 사이즈의 ITO 나노 입자로 구성된 ITO 나노 잉크와 직경 20~25 nm의 Ag nanowire 잉크를 기반으로 Brush painting 기술을 적용해 상온, 상압에서 낮은 면저항과 높은 투과도를 가지는 Nano IAI 하이브리드 투명 전극을 제작하였다. Nano IAI 투명 전극 제작 시 일정한 두께에서 Ag nanowire 코팅을 위한 brush painting 횟수를 변수로 하여 최적화 공정을 진행하였으며, Ag nanowire가 2번 brush painting 된 Nano IAI 다층 하이브리드 투명전극은 $3.4{\times}10^{-3}$ ohm-cm의 비저항과 52.33 ohm/square의 낮은 면저항을 나타내었다. 이를 통해 효과적으로Ag nanowire를 ITO nanoparticle 사이에 삽입할 경우, 고온의 열처리 공정을 통하지 않고 낮은 면저항을 가지는 인쇄형 투명 전극을 구현할 수 있음을 확인할 수 있었다. 특히 Nano IAI 다층 하이브리드 전극은 83.83%의 높은 투과도를 나타내는데 이는 삽입된 Ag Nanowire의 폭과 길이가 나노 사이즈이기 때문에 입사되는 빛이 흡수되기보다 대부분 투과하기 때문으로 사료된다. 또한, XRD 분석과 HRTEM 분석을 통해 Nano IAI 다층 하이브리드 투명전극의 전도 메커니즘을 설명하였다. 이와 같은 우수한 전기적, 광학적 특성은 brush painting 기법으로 제작된 Nano IAI 다층 하이브리드 투명 전극의 인쇄형 유기태양전지 적용 가능성을 나타낸다.

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Electro-Micromechanical 시험법을 이용한 Ni Nanowire Strands 강화 고분자 복합재료의 Sensing과 계면 물성 평가 (Sensing and Interfacial Evaluation of Ni Nanowire Strands/Polymer Composites using Electro-micromechanical Technique)

  • 김성주;정진규;박종만
    • 한국복합재료학회:학술대회논문집
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    • 한국복합재료학회 2005년도 추계학술발표대회 논문집
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    • pp.141-144
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    • 2005
  • Sensing and interfacial evaluation of Ni nanowire strands/polymer composites were investigated using Electro-micromechanical technique. Electro-micromechanical techniques can be used as sensing method for micro damage, loading, temperature of interfacial properties. Using Ni nanowire strands/silicone composites with different content, load sensing response of electrical contact resistivity was investigated under tensile and compression condition. The mechanical properties of Ni nanowire strands with different type/epoxy composites were measured using uniformed cyclic loading and tensile test. Ni nanowire strands/epoxy composites showed humidity and temperature sensing within limited ranges, 20 vol% reinforcement. Some new information on temperature and humidity sensing plus loading sensing of Ni nanowire strands/polymer composites could be obtained from the electrical resistance measurement as a new concept of the nondestructive interfacial evaluation.

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금속물질에 따른 나노구조를 이용한 국소 표면 플라즈몬 공명 센서 특성 분석 (Estimation of Sensitivity Enhancements of Material-Dependent Localized Surface Plasmon Resonance Sensor Using Nanowire Patterns)

  • 안희상;안동규;송영민;김규정
    • 한국정밀공학회지
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    • 제33권5호
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    • pp.363-369
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    • 2016
  • We explored localized plasmonic field enhancements using nanowire patterns to improve the sensitivity of a surface plasmon resonance (SPR) sensor. Two different materials, gold and silver, were considered for sample materials. Gold and silver nanowire patterns were fabricated by electron beam lithography for experimental measurements. The wavelength SPR sensor was also designed for these experiments. The material-dependent field enhancements on nanowire patterns were first calculated based on Maxwell's equations. Resonance wavelength shifts were indicated as changes in the refractive index from 1.33 to 1.36. The SPR sensor with silver nanowire patterns showed a much larger resonance wavelength shift than the sensor with gold nanowire patterns, in good agreement with simulation results. These results suggest that silver nanowire patterns are more efficient than gold nanowire patterns, and could be used for sensitivity enhancements in situations where biocompatibility is not a consideration.

Influence of Lithiation on Nanomechanical Properties of Silicon Nanowires Probed with Atomic Force Microscopy

  • Lee, Hyun-Soo;Shin, Weon-Ho;Kwon, Sang-Ku;Choi, Jang-Wook;Park, Jeong-Young
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.110-110
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    • 2011
  • The nanomechanical properties of fully lithiated and unlithiated silicon nanowire deposited on silicon substrate have been studied with atomic force microscopy. Silicon nanowires were synthesized using the vapor-liquid-solid process on stainless steel substrates using Au catalyst. Fully lithiated silicon nanowires were obtained by using the electrochemical method, followed by drop-casting on the silicon substrate. The roughness, derived from a line profile of the surface measured in contact mode atomic force microscopy, has a smaller value for lithiated silicon nanowire and a higher value for unlithiated silicon nanowire. Force spectroscopy was utilitzed to study the influence of lithiation on the tip-surface adhesion force. Lithiated silicon nanowire revealed a smaller value than that of the Si nanowire substrate by a factor of two, while the adhesion force of the silicon nanowire is similar to that of the silicon substrate. The Young's modulus obtained from the force-distance curve, also shows that the unlithiated silicon nanowire has a relatively higher value than lithiated silicon nanowire due to the elastically soft amorphous structures. The frictional forces acting on the tip sliding on the surface of lithiated and unlithiated silicon nanowire were obtained within the range of 0.5-4.0 Hz and 0.01-200 nN for velocity and load dependency, respectively. We explain the trend of adhesion and modulus in light of the materials properties of silicon and lithiated silicon. The results suggest a useful method for chemical identification of the lithiated region during the charging and discharging process.

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High-Performance Single-Crystal Organic Nanowire Field-Effect Transistors of Indolocarbazole Derivatives

  • 박경선;정진원;성명모
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.368-368
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    • 2012
  • We report solution-processed, high-performance single-crystal organic nanowire transistors fabricated from a novel indolocarbazole (IC) derivative. The direct printing process was utilized to generate single-crystal organic nanowire arrays enabling the simultaneous synthesis, alignment and patterning of nanowires using molecular ink solutions. Using this method, single-crystal organic nanowires can easily be synthesized by self-assembly and crystallization of organic molecules within the nanoscale channels of molds, and these nanowires can then be directly transferred to specific positions on substrates to generate nanowire arrays by a direct printing process. These new molecules are particularly suitable for p-channel organic field-effect transistors (OFETs) because of the high level of crystallinity usually found in IC derivatives. Selected area diffraction (SAED) and X-ray diffraction (XRD) experiments on these solution-processed nanowires showed high crystallinity. Transistors fabricated with these nanowires gave a hole mobility as high as 1.0 cm2V-1s-1 with nanowire arrays with the direct printing process.

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$Nos\acute{e}-Poincar\acute{e}$ 분자 동역학 알고리즘을 이용한 나노 와이어의 역학적 거동 해석 (Analysis of Mechanical Behavior of Nanowire by $Nos\acute{e}-Poincar\acute{e}$ Molecular Dynamics Simulation)

  • 이병용;조맹효
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2007년도 춘계학술대회A
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    • pp.506-511
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    • 2007
  • Mechanical behavior of copper nanowire is investigated. An FCC nanowire model composed of 1,408 atoms is used for MD simulation. Simulations are performed within NVT ensemble setting without periodic boundary conditions. $Nos\acute{e}-Poincar\acute{e}$ MD algorithm is employed to guarantee preservation of Hamiltonian and temperature. Numerical tensile tests of Nanowire are carried out with constant strain rate. Additionally, temperature and strain rate effects are considered. Stress-strain curve is constructed from the calculated Cauchy stresses and specified strain values. In (22,4,4) Copper nanowire, non-linear behavior appears around ${\epsilon}\simeq0.09.$ At this instance, starting of structural reorientations are observed. At the onset of reorientation, the modulus characteristics are also investigated.

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DNA를 형틀로 이용한 전도성 Polypyrrole Nanowire의 제작 연구 (Studies on Conductive Polypyrrole Nanowires Fabricated with DNA templates)

  • 문학기;노용한
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.178-179
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    • 2006
  • 나노 크기를 가지는 DNA 분자를 template로 사용하여 전도성 고분자의 일종인 polypyrrole nanowire를 합성하였다. 본 논문에서 합성된 polypyrrole nanowire는 단량체인 pyrrole과 산화제와의 화학적인 반응에 의해 만들어졌다. 먼저 DNA 분자를 APTES(3-aminopropyltriethoxysilane) modified Si surface 위에 정렬한다. 그리고 이 기판을 농도를 달리한 pyrrole solution에서 incubationn한다. 마지막으로 APS (ammonium persulfate)와 반응시켜 conductive nanowire를 합성하였다. SEM을 이용하여 silicon 기판위에 1차원적으로 정렬된 나노 크기를 가지는 polypyrrole nanowire를 관찰할수 있었다. 그리고 pyrrole의 농도에 따라 nanowire의 uniformity를 조절할 수 있었다.

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