• Title/Summary/Keyword: Nanoporous structure

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Influence of Nanostructured TiO2 Electrode Fabricated with Acid-treated Paste on the Photovoltaic Efficiency of Dye-Sensitized Solar Cells (산처리된 페이스트로 제조한 나노 구조체 TiO2 전극이 염료감응형 태양전지의 효율에 미치는 영향)

  • Lee, Jae-Wook;Hwang, Kyung-Jun;Roh, Sung-Hee;Kim, Sun-Il
    • Applied Chemistry for Engineering
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    • v.18 no.4
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    • pp.356-360
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    • 2007
  • Recently, dye sensitized solar cells (DSSCs) composed of nanoporous $TiO_2$, light-sensitive dyes, electrolytes, and counter electrode have been received much attention. Nanostructured particles with higher surface area for the higher adsorption of Ru (II) dye are required to increase the quantity of light absorption. Also, it has been reported that the key factor to achieve high energy conversion efficiency in the photoelectrode of DSSC is the heat treatment of $TiO_2$ paste with acid addition. In this work, we investigated the influence of acid treatment of $TiO_2$ solar cell on the photovoltaic performance of DSSC. The working electrodes fabricated in this work were characterized by X-ray photoelectron spectroscopy (XPS), extended X-ray absorption fine structure (EXAFS), field emission scanning electron microscope (FE-SEM), and atomic force microscope (AFM). In addition, the influence of nanostructured photoelectrode fabricated with the acid-treated paste on the energy conversion efficiency was investigated on the basis of photocurrent-potential curves. It was found that the influence of acid-treated paste on the photovoltaic efficiency was significant.

A study on the structure of Si-O-C thin films with films size pore by ICPCVD (ICPCVD방법에 의한 나노기공을 갖는 Si-O-C 박막의 형성에 관한 연구)

  • Oh, Teresa
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2002.11a
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    • pp.477-480
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    • 2002
  • Si-O-C(-H) thin film with a tow dielectric constant were deposited on a P-type Si(100) substrate by an inductively coupled plasma chemical vapor deposition (ICPCVD). Bis-trimethylsilymethane (BTMSM, H$_{9}$C$_3$-Si-CH$_2$-Si-C$_3$H$_{9}$) and oxygen gas were used as Precursor. Hybrid type Si-O-C(-H) thin films with organic material have been generated many voids after annealing. Consequently, the Si-O-C(-H) films can be made a low dielectric material by the effect of void. The surface characterization of Si-O-C(-H) thin films were performed by SEM(scanning electron microscope). The characteristic analysis of Si-O-C(-H) thin films were performed by X-ray photoelectron spectroscopy (XPS).

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