• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.287.1-287.1
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• 2016

Three-dimensional (3-D) semiconductor nanoarchitectures, including nano- and micro- rods, pyramids, and disks, are emerging as one of the most promising elements for future optoelectronic devices. Since these 3-D semiconductor nanoarchitectures have many interesting unconventional properties, including the use of large light-emitting surface area and semipolar/nonpolar nano- or micro-facets, numerous studies reported on novel device applications of these 3-D nanoarchitectures. In particular, 3-D nanoarchitecture devices can have noticeably different current spreading characteristics compared with conventional thin film devices, due to their elaborate 3-D geometry. Utilizing this feature in a highly controlled manner, color-tunable light-emitting diodes (LEDs) were demonstrated by controlling the spatial distribution of current density over the multifaceted GaN LEDs. Meanwhile, for the fabrication of high brightness, single color emitting LEDs or laser diodes, uniform and high density of electrical current must be injected into the entire active layers of the nanoarchitecture devices. Here, we report on a new device structure to inject uniform and high density of electrical current through the 3-D semiconductor nanoarchitecture LEDs using metal core inside microtube LEDs. In this work, we report the fabrications and characteristics of metal-cored coaxial $GaN/In_xGa_{1-x}N$ microtube LEDs. For the fabrication of metal-cored microtube LEDs, $GaN/In_xGa_{1-x}N/ZnO$ coaxial microtube LED arrays grown on an n-GaN/c-Al2O3 substrate were lifted-off from the substrate by wet chemical etching of sacrificial ZnO microtubes and $SiO_2$ layer. The chemically lifted-off layer of LEDs were then stamped upside down on another supporting substrates. Subsequently, Ti/Au and indium tin oxide were deposited on the inner shells of microtubes, forming n-type electrodes of the metal-cored LEDs. The device characteristics were investigated measuring electroluminescence and current-voltage characteristic curves and analyzed by computational modeling of current spreading characteristics.

• 대한기계학회논문집B
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• 제39권6호
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• pp.541-548
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• 2015

본 논문에서는 순차적 화학기상증착법에 기반하여 다양한 구조적 특성을 갖는 산화아연 나노구조체를 탄소나노튜브 상에 3 차원 혼성구조로 형성하는 공정을 개발하고 그 형성 메커니즘을 논한다. 이어서 나노와이어, 나노로드, 나노플레이트, 다결정 나노박막 등 다양한 형상의 산화아연 나노구조를 온도, 압력, 개스유량 등 주요 파라미터들의 조절을 통해 형성할 수 있음을 보이며, 이의 형성 원리에 대해 기본적인 형성 메커니즘과 연계하여 고찰한다. 본 연구 결과를 통해, 압전 및 광전 에너지변환 특성 등 풍부한 기능성을 보유하되 다소 높은 전기저항을 갖는 산화아연 나노구조체를 다양한 포맷으로 양전도성의 탄소나노튜브와 혼성화 함으로써, 각각의 포맷 별로 특화된 보다 폭넓은 응용 분야로의 활용을 구현해 나갈 수 있을 것이다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.13.1-13.1
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• 2011

Photoelectrochemical solar cells such as dye-sensitized cells (DSSCs), which exhibit high performance and are cost-effective, provide an alternative to conventional p-n junction photovoltaic devices. However, the efficiency of such cells plateaus at 11~12%, in contrast to their theoretical value of 33%. The majority of research has focused on improving energy conversion efficiency of DSSC by controlling nanostructure and exploiting new materials in photoelectrode consisting of semiconducting oxide nanoparticles and a transparent conducting oxide electrode (TCO) [1-5]. In this presentation, we introduce inverse opal-based scattering layers containing highly crystalline anatase nanoparticles and their feasibility for use as bi-functional light scattering layer is discussed in terms of optical reflectance and charge generation properties as a function of optical wavelength. A new ITO nanowire-based photoelecrode is also introduced and its unique charge collection property is presented, demonstrating potential use for highly efficient charge collection in DSSC.