• Title/Summary/Keyword: Nano-thickness

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Single Wall Carbon Nanotube Films Produced by Arc Discharge (아크 방전법으로 성장된 대면적 단일벽 탄소나노튜브 필름)

  • Kang, Young-Jin;Oh, Dong-Hoon;Song, Hye-Jin;Jung, Jin-Yeun;Jung, Hyuk;Cho, You-Suk;Kim, Do-Jin
    • Korean Journal of Materials Research
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    • v.18 no.5
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    • pp.253-258
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    • 2008
  • A simple method to deposit carbon nanotube films uniformly on large area substrates using an arc discharge method is reported in this paper. The arc discharge method was modified to deposit carbon nanotube films in situ on the substrates. The substrates were scanned several times over the arcing point for a uniform film thickness. Deposition was carried out under variable dc bias conditions at 600 torr of $H_2$ gas. The thickness uniformity of the single-wall carbon nanotube films as characterized by a four-point probe was within 30% deviation. The morphology and crystal quality of the single-wall carbon nanotube film were also characterized by field emission scanning electron microscopy and Raman spectroscopy.

On vibration properties of functionally graded nano-plate using a new nonlocal refined four variable model

  • Belkorissat, Ismahene;Houari, Mohammed Sid Ahmed;Tounsi, Abdelouahed;Bedia, E.A. Adda;Mahmoud, S.R.
    • Steel and Composite Structures
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    • v.18 no.4
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    • pp.1063-1081
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    • 2015
  • In this paper, a new nonlocal hyperbolic refined plate model is presented for free vibration properties of functionally graded (FG) plates. This nonlocal nano-plate model incorporates the length scale parameter which can capture the small scale effect. The displacement field of the present theory is chosen based on a hyperbolic variation in the in-plane displacements through the thickness of the nano-plate. By dividing the transverse displacement into the bending and shear parts, the number of unknowns and equations of motion of the present theory is reduced, significantly facilitating structural analysis. The material properties are assumed to vary only in the thickness direction and the effective properties for the FG nano-plate are computed using Mori-Tanaka homogenization scheme. The governing equations of motion are derived based on the nonlocal differential constitutive relations of Eringen in conjunction with the refined four variable plate theory via Hamilton's principle. Analytical solution for the simply supported FG nano-plates is obtained to verify the theory by comparing its results with other available solutions in the open literature. The effects of nonlocal parameter, the plate thickness, the plate aspect ratio, and various material compositions on the dynamic response of the FG nano-plate are discussed.

Surface silicon film thickness dependence of electrical properties of nano SOI wafer (표면 실리콘막 두께에 따른 nano SOI 웨이퍼의 전기적 특성)

  • Bae, Young-Ho;Kim, Byoung-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.7-8
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    • 2005
  • The pseudo MOSFET measurement technique has been a simple and rapid method for characterization of SOI wafers without any device fabrication process. We adopted the pseudo MOSFET technique to examine the surface silicon film thickness dependence of electrical properties of SOI wafer. The measurements showed that turn-on voltage increased and electron mobility decreased as the SOI film thickness was reduced in the SOI film thickness of less than 20 nm region.

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Passivation Thickness Dependent Electro-Optic Characteristics of the Fringe Field Switching (FFS) Mode using the Liquid Crystal with Positive Dielectric Anisotropy (양의 액정을 이용한 FFS모드에서 유전층 두께에 따른 전기광학적 특성 연구)

  • Jung, Jun-Ho;Park, Ji-Woong;An, Young-Joo;Kim, Mi-Young;Lee, Seung-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.04a
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    • pp.53-54
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    • 2008
  • We have studied electro-optic characteristics as a function of passivation thickness$(t_p)$ in the fringe-field swiching (FFS) mode using the LC with positive dielectric anisotropy. When $t_p$ is increased from $0.29{\mu}m$ to $3.0{\mu}m$, a maximum transmittance is slightly increased to $2{\mu}m$. However, operating voltage is continuously increased up to above 11v. We found that the tilt angle is decreased between the edge of pixel electrode and the center of each pixel electrode. In the FFS mode using the liquid crystal with positive dielectric anisotropy, transmittance is affected by the tilt angle. When tilt angle is increased, transmittance become decrease. Therefore, in the FFS device, a low tilt angle is favored for high transmittance. It is demonstrated that the suitable passivation thickness make a tilt angle decreased.

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Characterization of Electro-deposited Ni-P Layer by Using Dynamic Nano-Indentation Method (동적 나노압침법을 이용한 Ni-P 도막의 특성 연구)

  • Jung, Moo Young;Baik, Youl;Kang, Bo Kyeong;Choi, Yong;Kwon, Hyuk Joo
    • Journal of the Korean institute of surface engineering
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    • v.51 no.4
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    • pp.197-201
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    • 2018
  • Dynamic nano-indentation method was applied to characterize thin electroformed Ni-P layers. The Ni-P layers were produced in a sulphamic acid bath at $50^{\circ}C$ in $0.02A/cm^2$ for 10-60 minutes. The chemical analyses by XRD and EDX showed that the Ni-P layers were very fine grains with mainly $Ni_3P$ with Ni. The surface roughness determined by atomic force microscopy increased with thickness, which was relative to the surface morphology. The nano-hardness and the stiffness of the thin Ni-P layers with thickness of 1.9, 6.2 and $7.5{\mu}m$ were 5.52, 6.52 and 6.77 [GPa] and 56.7, 76.2 and 108.0 [${\mu}N/nm$], respectively. The elastic modulus of the Ni-P layer increased with thickness such as 37.29, 54.50 and 78.76 [GPa], respectively. The surface roughness of the electroplated Ni-P layers with diverse thickness was 8.66, 18.56 and 35.22 [nm], respectively. The enhanced nano-mechanical properties were related to mainly residual stress of the Ni-P layers.

Development of control technique of nano-sized pattern for electroplating (나노급 도금공정을 위한 미세패턴 제어기술의 개발)

  • Lee, Jae-Hong;Lee, Byoung-Wook;Lee, Kyung-Ho;Kim, Chang-Kyo
    • Proceedings of the KIEE Conference
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    • 2004.07c
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    • pp.1576-1578
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    • 2004
  • The alumina membrane with nano sized pore was prepared from aluminum by anodic oxidation to apply for storage equipment, gas sensor and stamper. The pore size and cell size of the pores are controlled by anodic oxidation voltage. The alumina thickness was controlled by etching process using 0.2M $H_3PO_4$. The thickness of alumina on Si wafer was very accurately controlled by anodic oxidation time. Nickel with nano-sized grain was electroplated on the Au layer on silicon wafer. The fabricated pores on alumina membrane was the thickness of $7{\sim}10{\mu}m$ with straight nano-sized pore of 307${\sim}$120nm. The alumina by the etching process shows smooth surface. The size of Ni grain was 130nm and 250nm for 10mA/$cm^2$and 20mA/$cm^2$of electroplating currents, respectively.

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The Minimization of Residual Layer Thickness by using optimized dispensing method in UVnanoimprint Lithography Process (UV 나노임프린트 리소그래피 공정에서 레지스트 도포의 최적화를 통한 잔류층 두께의 최소화)

  • Kim K.D.;Jeong J.H.;Sim Y.S.;Lee E.S.;Kim J.H.;Cho Y.K.;Hong S.C.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.06a
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    • pp.633-636
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    • 2005
  • Imprint lithography is a promising method for high-resolution and high-throughput lithography using low-cost equipment. As with other nanoimprint methods, ultraviolet-nanoimprint lithography (UV-NIL) resolution appears to be limited only by template resolution, and offers a significant cost of ownership reduction when compared to other next generation lithography (NGL) methods such as EUVL and 157 nm lithography. The purpose of this paper is to suggest optimum values of control parameters of Imprio 100 manufactured by Molecular Imprint, Inc., which is the first commercially available UV-NIL tool, for sound nanoimprint. UV-NIL experiments were performed on Imprio 100 to find dispensing recipe for avoiding air entrapment. Dispensing recipe related to residual layer thickness and uniformity was optimized and 40 nm thick residual layer was achieved.

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Active Layer Simulation for the Tolerance of Epi-layer Thickness at CaAs/AlGaAs 3-Quantum Well Quantum Cascade Lasers (GaAs/AlGaAs 3-Quantum Well 양자폭포레이저 (Quantum Cascade Lasers)에서 허용되는 에피정밀도를 위한 활성영역 모의실험)

  • Lee, Hye-Jin;Lee, Cheng-Ming;Han, Il-Ki;Lee, Jung-Il;Kim, Moon-Deock
    • Journal of the Korean Vacuum Society
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    • v.16 no.4
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    • pp.273-278
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    • 2007
  • For the simulation of active region in the quantum cascade lasers (QCL), we solved Schrodinger equation utilizing Runge-Kutta method and Shotting method. Wavelength, phonon resonant energy, and dipole matrix element were simulated with the variation of active region thickness. As a result of such simulation, it was suggested the tolerance range of epi-layer thickness error when 3-quantum well QCL structures are grown.

Dielectric Breakdown Behavior of Anodic Oxide Films Formed on Pure Aluminum in Sulfuric Acid and Oxalic Acid Electrolytes

  • Hien Van Pham;Duyoung Kwon;Juseok Kim;Sungmo Moon
    • Journal of the Korean institute of surface engineering
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    • v.56 no.3
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    • pp.169-179
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    • 2023
  • This work studies dielectric breakdown behavior of AAO (anodic aluminum oxide) films formed on pure aluminum at a constant current density in 5 ~ 20 vol.% sulfuric acid (SA) and 2 ~ 8 wt.% oxalic acid (OA) solutions. It was observed that dielectric breakdown voltage of AAO film with the same thickness increased with increasing concentration of both SA and OA solutions up to 15 vol.% and 6 wt.%, respectively, above which it decreased slightly. The dielectric breakdown resistance of the OA films appeared to be superior to that of SA films. After dielectric breakdown test, cracks and a hole were observed. The crack length increased with increasing SA film thickness but it did not increase with increasing OA film thickness. To explain the reason why shorter cracks formed on the OA films than the SA films after dielectric breakdown test, the generation of tensile stresses at the oxide/metal interface was discussed in relation to porosity of AAO films obtained from cross-sectional morphologies.

A Study on the Measurement for the Nano Scale Film Formation of Ultra Low Aspect Ratio

  • Jang Siyoul;Kong Hyunsang
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2004.11a
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    • pp.283-288
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    • 2004
  • The measurement of ultra low aspect ratio fluid film thickness is very crucial technique both for the verification of lubrication media characteristics and for the clearance design in many precision components such as MEMS, precision bearings and other slideways. Many technologies are applied to the measurement of ultra low aspect ratio fluid film thickness (i.e. elastohydrodynamic lubrication film thickness). In particular, in-situ optical interferometric method has many advantages in making the actual contact behaviors realized with the experimental apparatus. This measurement method also does the monitoring of the surface defects and fractures happening during the contact behavior, which are delicately influenced by the surface conditions such as load, velocity, lubricant media as well as surface roughness. Careful selection of incident lights greatly enhances the fringe resolutions up to $\~1.0$ nanometer scale with digital image processing technology. In this work, it is found that coaxial aligning trichromatic incident light filtering system developed by the author can provide much finer resolution of ultra low aspect ratio fluid film thickness than monochromatic or dichromatic incident lights, because it has much more spectrums of color components to be discriminated according the variations of film thickness. For the measured interferometric images of ultra low aspect ratio fluid film thickness it is shown how the film thickness is finely digitalized and measured in nanometer scale with digital image processing technology and space layer method. The developed measurement system can make it possible to visualize the contact deformations and possible fractures of contacting surface under the repeated loading condition.

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