• 제목/요약/키워드: Nano-Porous Alumina

검색결과 38건 처리시간 0.027초

졸-겔 방법으로 제조된 Er doped $Al_2O_3/SiO_2$ 필름의 다공성과 결정성에 대한 광 발광 특성 (The dependence of porosity and crystallity on photoluminescence properties of Er doped $Al_2O_3/SiO_2$ films prepared by sol-gel method)

  • 권정오;김재홍;석상일;정동운
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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    • pp.137-137
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    • 2003
  • Optical amplificator have been used to compensate the losses in the optical signal transmission and processing. Today, there has been increasing demand for the very low cost optical amplifier. Sol-gel offers considerable potential both low cost manufacture, and for great flexibility in materials composition and structure. In addition, the sol-gel process is a very attractive method for producing porous materials with controlled structure. In this work, we present the potoluminescence properties of Er doped A1$_2$O$_3$/SiO$_2$ films. Erbium doped alumina nano sol was prepared by Al(NO$_3$)$_3$.9$H_2O$ and Er(NO$_3$)$_3$.5$H_2O$ through hydrolysis and peptization, and then GPS (3-Glycidoxypropyltrimethoxysilane) was added into Er doped alumina nano sol for organic- inorganic hybridization. Er doped A1$_2$O$_3$/SiO$_2$ film was obtained by spin coating, dip coating and thermal treatment from 30$0^{\circ}C$~120$0^{\circ}C$, and there were crack-free after thermal treatment. The thickness of film was measured SEM, and the porosity of film was characterized by BET and TGA. The crystal phase of Er doped A1$_2$O$_3$/SiO$_2$ were determined by XRD. Finally, the photoluminescence properties of Er doped A1$_2$O$_3$/SiO$_2$ films will be discuss with the consideration of porosity and crystallity.

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Generalized Maxwell Stefan 모형을 이용한 유기 템플레이팅 실리카/알루미나 복합막의 $CO_2/N_2$ 혼합물의 투과/분리 기구 해석 (Study for Transport and Separation Mechanisms of $CO_2/N_2$ Mixture on Organic Templating Silica/Alumina Composite Membrane by Using Generalized Maxwell Stefan model)

  • 이창하;문종호;김민배;강병섭;현상훈
    • 한국가스학회지
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    • 제8권3호
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    • pp.43-51
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    • 2004
  • GMS(generalized Maxwell Stefan) 모형을 이용하여 나노기공성 TPABr (Tetrapropylammoniumbromide) templating 실리카/알루미나 복합막에서 $CO_2$$N_2$의 투과 및 분리 특성을 해석하였다. 담체로 쓰이는 메조포러스 알루미나 지지체에서의 기체 투과는 누슨 확산 (Knudsen diffusion) 및 점성 확산 (viscous diffusion 혹은 Poiseuille flow)에 의존하였으며, 이러한 투과메커니즘은 DGM (dusty gas model)을 통하여 규명할 수 있었다. 본 연구에 사용한 복합막의 분리 특성을 결정 짖는 TPABr templating silica layer의 경우 강한 흡착 특성으로 인하여, 기공 확산보다는 표면 확산(surface diffusion)을 나타내었다. 따라서 GMS 모형을 통해 다성분계의 표면 확산 투과/분리 메커니즘을 성공적으로 해석할 수 있었다. 본 연구에서 사용된 복합무기막에서는 흡착량과 표면 확산 현상이 복합적으로 일어나기 때문에, 강흡착질인 $CO_2$와 비교적 약흡착질인 $N_2$ 혼합물 분리에 있어, $CO_2$의 pore-blocking 현상으로 인해 $CO_2$가 투과 농축되었다.

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나노 인덴터를 이용한 플라즈마 디스플레이 소자(PDP)내 격벽의 기계적 물성 평가 (Evaluation of Mechanical Properties of Barrier Ribs for Plasma Display Panel Using Nano Indenter Technology)

  • 정병해;김형순
    • 한국재료학회지
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    • 제13권1호
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    • pp.53-58
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    • 2003
  • For the rib materials in PDP(plasma display panel), an effective method to improve the mechanical properties is to form a composite material by reinforcing a glass matrix with rigid fillers, such as alumina and titania powders. In this study, two types of ribs with different volume percent of fillers and with different glass matrix were tested for hardness, Young's modulus with the Berkovich indentation. As a result, cracks appeared around at the load of 1345 mN for the dense type of rib, while porous one endured until 2427 mN without any crack formation. Young's modulus and hardness decreased at the range: 90∼65 GPa, 9∼4 GPa, respectively as a function of indent load. Thus, a new method with nanoindenter represents a possible evaluation method for mechanical properties of barrier ribs.

화합물 반도체 기판 위에 제작된 산화 알루미늄 광결정 특성 (Aluminum Oxide Photonic Crystals Fabricated on Compound Semiconductor)

  • 최재호;김근주;정미;우덕하
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.77-78
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    • 2006
  • We fabricated photonic crystals on GaAs and GaN substrates. After anodizing the aluminium thin film in electrochemical embient, the porous alumina was implemented to the mask for reactive ion beam etching process of GaAs wafer. And photonic crystals in GaN wafer were also fabricated using electron beam nano-lithography process. The coated PMMA thin film with 200 nm-thickness on GaN surface was patterned with triangular lattice and etched out the GaN surface by the inductively coupled plasma source. The fabricated GaAs and GaN photonic crystals provide the enhanced intensities of light emission for the wavelengths of 858 and 450 nm, respectively. We will present the detailed dimensions of photonic crystals from SEM and AFM measurements.

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폴리머 기판위에 형성된 나노구조제어 알루미나의 캐패시터 특성 (Capacitance Properties of Nano-Structure Controlled Alumina on Polymer Substrate)

  • 정승원;민형섭;한정환;이전국
    • 한국재료학회지
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    • 제17권2호
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    • pp.81-85
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    • 2007
  • Embedded capacitor technology can improve electrical perfomance and reduce assembly cost compared with traditional discrete capacitor technology. To improve the capacitance density of the $Al_2O_3$ based embedded capacitor on Cu cladded fiber reinforced plastics (FR-4), the specific surface area of the $Al_2O_3$ thin films was enlarged and their surface morphologies were controlled by anodization process parameters. From I-V characteristics, it was found that breakdown voltage and leakage current were 23 V and $1{\times}10^{-6}A/cm^2$ at 3.3 V, respectively. We have also measured C-V characteristics of $Pt/Al_2O_3/Al/Ti$ structure on CU/FR4. The capacitance density was $300nF/cm^2$ and the dielectric loss was 0.04. This nano-porous $Al_2O_3$ is a good material candidate for the embedded capacitor application for electronic products.

실리콘 및 사파이어 기판을 이용한 알루미늄의 양극산화 공정에 관한 연구 (Fabrication of Anodic Aluminum Oxide on Si and Sapphire Substrate)

  • 김문자;이진승;유지범
    • 한국재료학회지
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    • 제14권2호
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    • pp.133-140
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    • 2004
  • We carried out anodic aluminum oxide (AAO) on a Si and a sapphire substrate. For anodic oxidation of Al two types of specimens prepared were Al(0.5 $\mu\textrm{m}$)!Si and Al(0.5 $\mu\textrm{m}$)/Ti(0.1 $\mu\textrm{m}$)$SiO_2$(0.1 $\mu\textrm{m}$)/GaN(2 $\mu\textrm{m}$)/Sapphire. Surface morphology of Al film was analyzed depending on the deposition methods such as sputtering, thermal evaporation, and electron beam evaporation. Without conventional electron lithography, we obtained ordered nano-pattern of porous alumina by in- situ process. Electropolishing of Al layer was carried out to improve the surface morphology and evaluated. Two step anodizing was adopted for ordered regular array of AAO formation. The applied electric voltage was 40 V and oxalic acid was used as an electrolyte. The reference electrode was graphite. Through the optimization of process parameters such as electrolyte concentration, temperature, and process time, a regular array of AAO was formed on Si and sapphire substrate. In case of Si substrate the diameter of pore and distance between pores was 50 and 100 nm, respectively. In case of sapphire substrate, the diameter of pore and distance between pores was 40 and 80 nm, respectively

Nanomaterials Research Using Quantum Beam Technology

  • Kishimoto, Naoki;Kitazawa, Hideaki;Takeda, Yoshihiko
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 추계학술발표대회
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    • pp.7-7
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    • 2011
  • Quantum beam technology has been expected to develop breakthroughs for nanotechnology during the third basic plan of science and technology (2006~2010). Recently, Green- or Life Innovations has taken over the national interests in the fourth basic science and technology plan (2011~2015). The NIMS (National Institute for Materials Science) has been conducting the corresponding mid-term research plans, as well as other national projects, such as nano-Green project (Global Research for Environment and Energy based on Nanomaterials science). In this lecture, the research trends in Japan and NIMS are firstly reviewed, and the typical achievements are highlighted over key nanotechnology fields. As one of the key nanotechnologies, the quantum beam research in NIMS focused on synchrotron radiation, neutron beams and ion/atom beams, having complementary attributes. The facilities used are SPring-8, nuclear reactor JRR-3, pulsed neutron source J-PARC and ion-laser-combined beams as well as excited atomic beams. Materials studied are typically fuel cell materials, superconducting/magnetic/multi-ferroic materials, quasicrystals, thermoelectric materials, precipitation-hardened steels, nanoparticle-dispersed materials. Here, we introduce a few topics of neutron scattering and ion beam nanofabrication. For neutron powder diffraction, the NIMS has developed multi-purpose pattern fitting software, post RIETAN2000. An ionic conductor, doped Pr2NiO4, which is a candidate for fuel-cell material, was analyzed by neutron powder diffraction with the software developed. The nuclear-density distribution derived revealed the two-dimensional network of the diffusion paths of oxygen ions at high temperatures. Using the high sensitivity of neutron beams for light elements, hydrogen states in a precipitation-strengthened steel were successfully evaluated. The small-angle neutron scattering (SANS) demonstrated the sensitive detection of hydrogen atoms trapped at the interfaces of nano-sized NbC. This result provides evidence for hydrogen embrittlement due to trapped hydrogen at precipitates. The ion beam technology can give novel functionality on a nano-scale and is targeting applications in plasmonics, ultra-fast optical communications, high-density recording and bio-patterning. The technologies developed are an ion-and-laser combined irradiation method for spatial control of nanoparticles, and a nano-masked ion irradiation method for patterning. Furthermore, we succeeded in implanting a wide-area nanopattern using nano-masks of anodic porous alumina. The patterning of ion implantation will be further applied for controlling protein adhesivity of biopolymers. It has thus been demonstrated that the quantum beam-based nanotechnology will lead the innovations both for nano-characterization and nano-fabrication.

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졸-겔법에 의한 나노기공성 세라믹 막의 제조 및 기체투과 특성 (Preparation of Nanoporous Ceramic Membranes by Sol-gel Method and Characterization of Gas Permeation)

  • 이용택;최가영;한혁희
    • 멤브레인
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    • 제18권2호
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    • pp.176-184
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    • 2008
  • 본 연구에서 졸-겔 방법에 의하여 나노 기공을 가지는 세라믹막을 제조하여 단일 조성의 헬륨과 질소를 가지고 기체투과 실험을 수행하였다. 기공 크기 $0.1{\mu}m$, 기공율 32%의 평막형 ${\alpha}-Al_2O_3$ 지지체를 제조하였으며, 지지체를 담지하여 코팅하는 방법으로 4nm의 기공 크기를 가지는 ${\gamma}-Al_2O_3$ 중간층을 제조하였다. 실리카 졸은 TEOS의 산 촉매 가수분해와 축중합반응을 통하여 합성하였다. 막은 딥코팅과 소결과정을 거쳐 제조되었다. 졸-겔 법에 의해 합성된 세라믹 막을 통한 헬륨, 질소 투과 실험은 기체의 투과 특성을 파악하기 위하여 시행하였다. 질소에 대한 헬륨의 선택도는 $100{\sim}160$ 정도였으며 헬륨의 투과도는 $303{\sim}363K$의 온도 범위에서 $10^{-7}mol/m^2{\cdot}s{\cdot}Pa$ 정도였다.