• Advances in nano research
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• v.7 no.3
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• pp.209-221
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• 2019

Graphene, with impressive electronic properties, have high potential in the microelectronic field. However, graphene itself is a zero bandgap material which is not suitable for digital logic gates and its application. Thus, much focus is on graphene nanoribbons (GNRs) that are narrow strips of graphene. During GNRs fabrication process, the occurrence of defects that ultimately change electronic properties of graphene is difficult to avoid. The modelling of GNRs with defects is crucial to study the non-idealities effects. In this work, nearest-neighbor tight-binding (TB) model for GNRs is presented with three main simplifying assumptions. They are utilization of basis function, Hamiltonian operator discretization and plane wave approximation. Two major edges of GNRs, armchair-edged GNRs (AGNRs) and zigzag-edged GNRs (ZGNRs) are explored. With single vacancy (SV) defects, the components within the Hamiltonian operator are transformed due to the disappearance of tight-binding energies around the missing carbon atoms in GNRs. The size of the lattices namely width and length are varied and studied. Non-equilibrium Green's function (NEGF) formalism is employed to obtain the electronics structure namely band structure and density of states (DOS) and all simulation is implemented in MATLAB. The band structure and DOS plot are then compared between pristine and defected GNRs under varying length and width of GNRs. It is revealed that there are clear distinctions between band structure, numerical DOS and Green's function DOS of pristine and defective GNRs.

• Advances in nano research
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• v.10 no.5
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• pp.415-422
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• 2021

Silicene, a 2D allotrope of silicon, is predicted to be a potential material for future transistor that might be compatible with present silicon fabrication technology. Similar to graphene, silicene exhibits the honeycomb lattice structure. Consequently, silicene is a semimetallic material, preventing its application as a field-effect transistor. Therefore, this work proposes the uniform doping bandgap engineering technique to obtain the n-type silicene nanosheet. By applying nearest neighbour tight-binding approach and parabolic band assumption, the analytical modelling equations for band structure, density of states, electrons and holes concentrations, intrinsic electrons velocity, and ideal ballistic current transport characteristics are computed. All simulations are done by using MATLAB. The results show that a bandgap of 0.66 eV has been induced in uniformly doped silicene with phosphorus (PSi₃NW) in the zigzag direction. Moreover, the relationships between intrinsic velocity to different temperatures and carrier concentration are further studied in this paper. The results show that the ballistic carrier velocity of PSi₃NW is independent on temperature within the degenerate regime. In addition, an ideal room temperature subthreshold swing of 60 mV/dec is extracted from ballistic current-voltage transfer characteristics. In conclusion, the PSi₃NW is a potential nanomaterial for future electronics applications, particularly in the digital switching applications.

• Applied Chemistry for Engineering
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• v.22 no.3
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• pp.272-276
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• 2011

The separation of metallic and semiconducting single-wall carbon nanobubes (SWCNTs) by agarose gel method was carried out in this study. The effect of concentration of agarose, SDS (sodium dodecyl sulfate), and pH in the solution on separation behavior was investigated. With increasing the concentration of agarose in the solution, it showed that the ratio of metallic SWCNTs, which was analyzed from UV-vis-NIR spectroscopy, was increased in the solution phase, while the overall concentration of SWCNTs was decreased. With increasing the concentration of SDS, we could observe that the ratio of metallic SWCNTs was increased due to more affinity between SDS molecules and metallic SWCNT. The highest metallic SWCNTs ratio was reached up to 58.4% when the pH of solution was 8.2.

• Advances in nano research
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• v.13 no.3
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• pp.259-267
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• 2022

Two-dimensional (2D) transition metal carbides/nitrides or "MXenes" belong to a diverse-class of layered compounds, which offer composition- and electric-field-tunable electrical and physical properties. Although the majority of the MXenes, including Ti₃C₂T_x, are metallic, they typically show semiconductor-like behaviour in their percolated thin-film structure; this is also the most common structure used for fundamental studies and prototype device development of MXene. Magnetoconductance studies of thin-film MXenes are central to understanding their electronic transport properties and charge carrier dynamics, and also to evaluate their potential for spin-tronics and magnetoelectronics. Since MXenes are produced through solution processing, it is desirable to develop deposition strategies such as inkjet-printing to enable scale-up production with intricate structures/networks. Here, we systematically investigate the extrinsic negative magnetoconductance of inkjetprinted Ti₃C₂T_x MXene thin-films and report a crossover from weak anti-localization (WAL) to weak localization (WL) near 2.5K. The crossover from WAL to WL is consistent with strong, extrinsic, spin-orbit coupling, a key property for active control of spin currents in spin-orbitronic devices. From WAL/WL magnetoconductance analysis, we estimate that the printed MXene thin-film has a spin orbit coupling field of up to 0.84 T at 1.9 K. Our results and analyses offer a deeper understanding into microscopic charge carrier transport in Ti₃C₂T_x, revealing promising properties for printed, flexible, electronic and spinorbitronic device applications.

• Journal of Adhesion and Interface
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• v.23 no.4
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• pp.116-121
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• 2022

OFET have require fine patterning technology for organic semiconductor solution process to be used in actual electronics. In this study, we compared and analyzed the soft lithography method which can form fine patterns more than the conventional spin coating method in order to confirm that it can have better electrical characteristics. The soft lithography method produced a flexible master mold using nano patterns on compact disc surfaces and obtained a 650 nm wide 2,7-Dioctyl [1] benzothieno [3,2-b] [1] benzo thiophene (C_8-BTBT) nanowires. As a result, the field-effect mobility of devices fabricated by the spin coating method was 0.0036 cm²/Vs and mobility of devices produced by soft lithography method was 0.086 cm²/Vs, which was about 20 times higher than spin-coated devices and has better electrical performance.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.5
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• pp.362-368
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• 2023

In this paper, we presented the characteristics of the impulse signal which is applicable to the ultra-wideband antennas. In general, the width of the impulse has around sub nano or pico seconds in the time domain, where it corresponds to the wideband in the frequency domain. We confirmed by experiment that the impulse has around 130ps of the pulse width and bandwidth of 4GHz when 10MHz of sine wave excited as an input pulse. The fidelity factor was calculated in the time domain and -10dB bandwidth in the frequency domain was investigated for resistively loaded dipole antennas with different resistance per unit length. The received impulse signal through the wideband antennas is confirmed in the time and frequency domains that received pulse is to be similar to the generated impulse. The fidelity and bandwidth of the quantity value are 0.98 and 3.4GHz, respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.4
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• pp.16-21
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• 2017

In this paper, a Small-sized and planer resonator design of Magnetic Resonance - Wireless Power Transfer(MR-WPT) were proposed for practical applications of mobile devices, such as a laptop, a smart-phone and a tablet pc. The proposed MR-WPT system were based on four coil MR-WPT and designed as a transmitter part (Tx) and a receiver part (Rx) both are the same shape with the same loop and resonator. There are four different spiral coil type of resonators with variable of line length, width, gap and turns in $50mm{\times}50mm$ size. The both of top and bottom side of substrate(acrylic; ${\varepsilon}_r=2.56$, tan ${\delta}=0.008$) ere used to generate high inductance and capacitance in limited small volume. Loops were designed on the same plane of resonator to reduce their volume, and there are three different size. The proposed MR-WPT system were fabricated with two acrylic substrate plane of Tx and Rx each, the Rx and Tx loops and resonators were fabricated of copper sheets. There are 12 combinations of 3 loops and 4 resonators, each combination were measured to calculate transfer efficiency and resonance frequency in transfer distance from 1cm to 5cm. The measured results, the highest transfer efficiency was about 70%, and average transfer efficiency was 40%, on the resonance frequency was about 6.78 MHz, which is standard band by A4WP. We proposed small-sized and planer resonator of MR-WPT and showed possibility of mobile applications for small devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.6
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• pp.13-21
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• 2010

A energy efficient $V_{pp}$ generator using a variable pumping frequency for mobile DRAM is presented in this paper. The proposed $V_{pp}$ generator exploits 3 stages of a cross-coupled charge pump for energy efficiency. Instead of using a fixed pumping frequency in the conventional $V_{pp}$ generator, our proposed $V_{pp}$ generator adopts a voltage-controlled oscillator and uses variable frequencies to reduce the ramp-up time. As a result, our $V_{pp}$ generator generates 3.0 V output voltage with 24.0-${\mu}s$ ramp-up time at 2 mA current load and 1 nF capacitor load with 1.2 V supply voltage. Experimental results show that the proposed $V_{pp}$ generator consumes around 26% less energy (1573 nJ $\rightarrow$ 1162 nJ) and reduces 29% less ramp-up time (33.7-${\mu}s$ $\rightarrow$ 24.0-${\mu}s$) compared to the conventional approach.

• Korean Journal of Optics and Photonics
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• v.20 no.3
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• pp.175-181
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• 2009

Holographic lithography is one of the potential technologies for next generation lithography which can print large areas (6") as well as very fine patterns ($0.35{\mu}m$). Usually, photolithography has been developed with two target purposes. One was for LCD applications which require large areas (over 6") and micro pattern (over $1.5{\mu}m$) exposure. The other was for semiconductor applications which require small areas (1.5") and nano pattern (under $0.2{\mu}m$) exposure. However, holographic lithography can print fine patterns from $0.35{\mu}m$ to $1.5{\mu}m$ keeping the exposure area inside 6". This is one of the great advantages in order to realize high speed fine pattern photolithography. How? It is because holographic lithography is taking holographic optics instead of projection optics. A hologram mask is the key component of holographic optics, which can perform the same function as projection optics. In this paper, Surface-Relief TIR Hologram Mask technology is introduced, and enables more robust hologram masks than those previously reported that were formed in photopolymer recording materials. We describe the important parameters in the fabrication process and their optimization, and we evaluate the patterns printed from the surface-relief TIR hologram masks.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.1 s.343
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• pp.7-12
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• 2006

In this study, we developed irreversible and stable micro-size ferromagnetic structures utilizing hydrogenation and electron-beam lithography processes. The compositionally modulated (CM) Fe-Zr thin films that had average compositions $Fe_XZr_{100-x}$ with $x=65-85\%$ modulation periods of similar to 1 nm, and total thicknesses of similar to 100 m were prepared. The magnetic properties of CM Fe-Zr thin films were measured using a SQUID magnetometer, VSM and B-H loop tracer. After hydrogenation, the CM films exhibited larger magnetic moment increases than similar homogeneous alloy films for all compositions and かey showed largest increase in $Fe_{80}Zr_{20}$ composition. After aging in air at $300^{\circ}K$ the hydrogenated $Fe_{80}Zr_{20}$ CM films showed much larger magnetic moment increases, indicating that they relax to a stable, irreversible, soft magnetic state. The selective hydrogenation through electron-beam lithographed windows were performed after the circle shaped windows were prepared on $Fe_{80}Zr_{20}$ CM films by electron beam lithography. The hydrogenation through electron-beam resist and W lithographic techniques give a $49\%$ magnetic moment increase. This method can be applied to nano scale structures.