• Title/Summary/Keyword: Nano-Electronics

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Graphene Reconfigurable Antenna for GPS and Iridium Applications

  • Salem GAHGOUH;Ali GHARSALLAH
    • International Journal of Computer Science & Network Security
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    • v.23 no.3
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    • pp.203-207
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    • 2023
  • A frequency reconfigurable antenna based on graphene and used for multi-band wireless communications is presented in this article. The proposed antenna, which consists of two radiating rectangular loops with a graphene extension, is analyzed for Global Positioning System (GPS) and Iridium applications. Its operating frequency is tuned through the implementation of a layer of graphene and thereby adjusting the applied gate bias. Furthermore, the results show a novel use of graphene for microwave frequencies while achieving a frequency reconfiguration with an improvement of the impedance matching and the gain. The results also prove the importance of graphene, with its exceptional properties, for a promising future in nano-electronics.

Fabrication of the accelerometer using the nano-gap trench etching (나노갭 트렌치 공정을 이용한 가속도센서 제작)

  • Kim, Hyeon-Cheol;Kwon, Hee-jun
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.9 no.2
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    • pp.155-161
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    • 2016
  • This paper proposes a novel fabrication method for a capacitive type micro-accelerometer with uniform nano-gap using photo-assisted electro-chemical etching. The sensitivity of the accelerometer should be improved while the electrodes between the inertial mass and the sensing comb should be narrowed. In this paper the nano-gap trench structure is fabricated using the photo-assisted electrochemical etching method. The sensor was designed and analysed using ANSYS simulator. The characteristics of the etching were observed according to the dc bias, the light intensity, the composition of the solution, the temperature of the solution, and the pattern pitch variation. The optimum etching conditions were dc bias of 2V, Blue LED of 20mA, 49wt% HF:DMF:D.I.Water=1:20:10, the pattern pitch of $20{\mu}m$. Uniform trench structure with width of 344nm and depth of $11.627{\mu}m$ are formed using the optimum condition.

Nano Convergence Systems for Smart Living

  • Yeo, Jong-Souk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.55-55
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    • 2015
  • Today, engineers are facing new set of challenges that are quite different from the conventional ones. Information technologies are rapidly commoditizing while the paths beyond the current roadmaps became uncertain as various technologies have been pushed to their limits. Along with these changes in IT ecosystems, grand challenges such as global security, health, sustainability, and energy increasingly require trans-disciplinary solutions that go beyond the traditional arenas in STEM (Science, Technology, Engineering and Mathematics). Addressing these needs is shifting engineering education and research to a new paradigm where the emphasis is placed on the consilience for holistic and system level understanding and the convergence of technology with AHSD (arts, humanities, social science, and design). At the center of this evolutionary convergence, nanotechnologies are enabling novel functionalities such as bio-compatibility, flexibility, low power, and sustainability while on a mission to meet scalability and low cost for smart electronics, u-health, sensing networks, and self-sustainable energy systems. This talk introduces the efforts of convergence based on the emerging nano technology tool sets in the newly launched School of Integrated Technology and the Yonsei Institute of Convergence Technology at Yonsei International Campus. While the conventional devices have largely depended upon the inherent material properties, the newer devices are enabled by nanoscale dimensions and structures in increasingly standardized and scalable fabrication platform. Localized surface plasmon resonance in 0 dimensional nano particles and structures leads to subwavelength confinement and enhanced near-field interactions enabling novel field of metal photonics for sensing and integrated photonic applications [1,2]. Unique properties offered by 1 dimensional nanowires and 2 dimensional materials and structures can enable novel electronic, photonic, nano-bio, and biomimetic applications [3-5]. These novel functionalities offered by the emerging nanotechnologies are continuously finding pathways to be part of smart systems to improve the overall quality of life.

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Design of Step-down DC-DC Converter using Switched-capacitor for Small-sized Electronics Equipment (소형 전자기기를 위한 스위치드 커패시터 방식의 강압형 DC-DC 변환기 설계)

  • Kwon, Bo-Min;Heo, Yun-Seok;Song, Han-Jung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.11 no.12
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    • pp.4984-4990
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    • 2010
  • In this paper, a Step-down CMOS DC-DC Converter using low power switched capacitor method is designed in a 0.5 ${\mu}m$ technology for the integration of devices. Conventional DC-DC converter is used inductor that can store energy in a magnetic field but have low efficiency because power consumption is caused by magnetic flux. And there were problems with size, weight and price to integrate chip. In this paper, a proposed Inductorless step-down CMOS DC-DC converter of low power using SC method is designed in a 0.5um technology to solve these problems. Designed DC-DC converter have 96% power efficiency with 200kHz frequency by using cadence simulation.

Water Contact Angles of Graphene Transferred by Wet and Dry Transfer Methods (전사 방법에 따른 그래핀의 물 접촉각 변화)

  • Yoon, Min-Ah;Kim, Chan;Jung, Hyun-June;Kim, Jae-Hyun;Kim, Kwang-Seop
    • Tribology and Lubricants
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    • v.34 no.2
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    • pp.60-66
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    • 2018
  • Graphene is a monolayer of carbon atoms (approximately 0.34 nm), arranged in a honeycomb network. It has been hailed as a next-generation flexible and transparent material because it has high electrical and thermal conductivities, excellent mechanical properties, as well as flexible and transparent properties. The wettability of graphene alters its adhesion or surface energy, and it is therefore an important parameter influencing its application in the fabrication of next-generation flexible and transparent electronics. Studies on the wettability of graphene are numerous and various opinions exist. However, almost all of these studies use the wet transfer method to transfer the graphene. In this study, therefore, we investigated the effect of wet and dry transfer methods on water contact angles of graphene on a substrate. The contact angles of substrates vary depending on the type of substrate. It was found that after graphene is transferred to the substrate, regardless of transfer method, the graphene/substrate contact angle increases to a value. The contact angle of graphene transferred using the dry transfer method is higher than the contact angle of graphene transferred using wet transfer methods. The wet transferred graphene is affected by the poly(methyl methacrylate) (PMMA) residue and the polar surface of substrate. The dry transferred graphene is influenced by the conformal contact between graphene and substrate.

Direct Measurement of Distortion of Optical System of Lithography (노광 광학계의 왜곡수차 측정에 관한 연구)

  • Joo, WonDon;Lee, JiHoon;Chae, SungMin;Kim, HyeJung;Jung, Mee Suk
    • Korean Journal of Optics and Photonics
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    • v.23 no.3
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    • pp.97-102
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    • 2012
  • In general, one of the methods used to measure distortion is to use the full image of the regular pattern. However, because of low accuracy, this method is mainly used for an optical system such as a camera.. In order to measure distortion with high accuracy less than 1um, one can use the method of measuring the exact position of a mask image. In this case, a high accuracy stage with a laser encoder is required. In this paper, we investigate measurement of the distortion of high accuracy with a simple manual stage. The main idea is that we split and measure the mask image with the overlapping area by using CCD or CMOS, and then we get an exact position of the mask image by integrating the adjacent split images. We use the Canny Edge Detection method to get the position information of the mask image and we researched the process to exactly calculate distortion by using coordinate transformations and a least square method.

Colloidal Engineering for Nano-Bio Fusion Research (Nano-Bio 융합 연구를 위한 콜로이드 공학)

  • Moon, Jun Hyuk;Yi, Gi-Ra;Lee, Sang-Yup;So, Jae-Hyun;Kim, Young-Seok;Yoon, Yeo-Kyun;Cho, Young-Sang;Yang, Seung-Man
    • Korean Chemical Engineering Research
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    • v.46 no.4
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    • pp.647-659
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    • 2008
  • Colloids are a heterogeneous system in which particles of a few nanometers to hundreds micrometers in size are finely dispersed in liquid medium, but show homogeneous properties in macroscopic scale. They have attracted much attention not only as model systems of natural atomic and molecular self-assembled structures but also as novel structural materials of practical applications in a wide range of areas. In particular, recent advances in colloidal science have focused on nano-bio materials and devices which are essential for drug discovery and delivery, diagnostics and biomedical applications. In this review, first we introduce nano-bio colloidal systems and surface modification of colloidal particles which creates various functional groups. Then, various methods of fabrication of colloidal particles using holographic lithography, microfluidics and virus templates are discussed in detail. Finally, various applications of colloids in metal inks, three-dimensional photonic crystals and two-dimensional nanopatterns are also reviewed as representative potential applications.

40-TFLOPS artificial intelligence processor with function-safe programmable many-cores for ISO26262 ASIL-D

  • Han, Jinho;Choi, Minseok;Kwon, Youngsu
    • ETRI Journal
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    • v.42 no.4
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    • pp.468-479
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    • 2020
  • The proposed AI processor architecture has high throughput for accelerating the neural network and reduces the external memory bandwidth required for processing the neural network. For achieving high throughput, the proposed super thread core (STC) includes 128 × 128 nano cores operating at the clock frequency of 1.2 GHz. The function-safe architecture is proposed for a fault-tolerance system such as an electronics system for autonomous cars. The general-purpose processor (GPP) core is integrated with STC for controlling the STC and processing the AI algorithm. It has a self-recovering cache and dynamic lockstep function. The function-safe design has proved the fault performance has ASIL D of ISO26262 standard fault tolerance levels. Therefore, the entire AI processor is fabricated via the 28-nm CMOS process as a prototype chip. Its peak computing performance is 40 TFLOPS at 1.2 GHz with the supply voltage of 1.1 V. The measured energy efficiency is 1.3 TOPS/W. A GPP for control with a function-safe design can have ISO26262 ASIL-D with the single-point fault-tolerance rate of 99.64%.

Analysis of Crosstalk-Induced Variation of Coupling Capacitance between Interconnect lines in High Speed Semiconductor Devices (고속 반도체 소자에서 배선 간의 Crosstalk에 의한 Coupling Capacitance 변화 분석)

  • Ji Hee-Hwan;Han In-Sik;Park Sung-Hyung;Kim Yong-Goo;Lee Hi-Deok
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.5 s.335
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    • pp.47-54
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    • 2005
  • In this paper, novel test patterns and on-chip data are presented to indicate that the variation of coupling capacitance, ${\Delta}Cc$ by crosstalk can be larger than static coupling capacitance, Cc. It is also shown that ${\Delta}Cc$ is strongly dependent on the phase of aggressive lines. for anti-phase crosstalk ${\Delta}Cc$ is always larger than Cc while for in-phase crosstalk ${\Delta}Cc$ is smaller than Cc. HSPICE simulation shows good agreement with the measurement data.

Fabrication of Multi-Fin-Gate GaN HEMTs Using Honeycomb Shaped Nano-Channel (벌집구조의 나노채널을 이용한 다중 Fin-Gate GaN 기반 HEMTs의 제조 공정)

  • Kim, Jeong Jin;Lim, Jong Won;Kang, Dong Min;Bae, Sung Bum;Cha, Ho Young;Yang, Jeon Wook;Lee, Hyeong Seok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.1
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    • pp.16-20
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    • 2020
  • In this study, a patterning method using self-aligned nanostructures was introduced to fabricate GaN-based fin-gate HEMTs with normally-off operation, as opposed to high-cost, low-productivity e-beam lithography. The honeycomb-shaped fin-gate channel width is approximately 40~50 nm, which is manufactured with a fine width using a proposed method to obtain sufficient fringing field effect. As a result, the threshold voltage of the fabricated device is 0.6 V, and the maximum normalized drain current and transconductance of Gm are 136.4 mA/mm and 99.4 mS/mm, respectively. The fabricated devices exhibit a smaller sub-threshold swing and higher Gm peak compared to conventional planar devices, due to the fin structure of the honeycomb channel.